STU7N80K5

STD7N80K5, STP7N80K5, STU7N80K5 Datasheet N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB Features TAB VDS RDS(on) max ID 800 V 1.2 Ω 6A Order code 3 DPAK 1 TO-220 TAB IPAK 12 1 2 STD7N80K5 3 STP7N80K5 STU7N80K5 3 D(2, TAB) G(1) • Industry’s lowest RDS(on) x area • • • • Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications S(3) AM01476v1_tab • Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N80K5 STP7N80K5 STU7N80K5 DS9173 - Rev 7 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com STD7N80K5, STP7N80K5, STU7N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Parameter Gate- source voltage Value Unit ± 30 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 3.8 A Drain current (pulsed) 24 A Total power dissipation at TC = 25 °C 110 W 2 A 88 mJ IDM (1) PTOT IAR EAS Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax) Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns di/dt (2) Peak diode recovery current slope 100 A/μs dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tj Tstg Operating junction temperature range -55 to 150 Storage temperature range °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 6 A, VDS(peak) ≤ V(BR)DSS 3. VDS ≤ 640 V Table 2. Thermal data Symbol Parameter Value DPAK TO-220 Rthj-case Thermal resistance junction-case 1.14 Rthj-amb Thermal resistance junction-amb 62.5 Rthj-pcb (1) Thermal resistance junction-pcb 50 IPAK Unit °C/W 100 °C/W °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. DS9173 - Rev 7 page 2/23 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage Min. VGS = 0 V; ID = 1 mA Typ. 800 Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V; VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 3 A VGS = 0 V; VDS = 800 V, Tc = 125 °C Unit V VGS = 0 V; VDS = 800 V IDSS Max. 1 µA 50 µA ±10 µA 4 5 V 0.95 1.2 Ω Min. Typ. Max. Unit - 360 - pF - 30 - pF (1) 3 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1 - pF Co(tr) (1) Equivalent capacitance time related - 47 - pF Co(er) (2) Equivalent capacitance energy related - 20 - pF - 6 - Ω - 13.4 - nC VGS = 0 to 10 V - 3.7 - nC (see Figure 17. Test circuit for gate charge behavior) - 7.5 - nC RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS= 0 V VGS = 0 V, VDS = 0 to 640 V f = 1 MHz, ID = 0 A VDD = 640 V, ID = 6 A 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS DS9173 - Rev 7 page 3/23 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics Table 5. Switching times Symbol Parameter td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Test conditions Min. Typ. Max. Unit - 11.3 - ns - 8.3 - ns - 23.7 - ns - 20.2 - ns Min. Typ. Max. Unit VDD = 400 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16. Test circuit for resistive load switching times and Figure 21. Switching time waveform) Fall time Table 6. Source drain diode Symbol Parameter Test conditions ISD Source-drain current - 6 A ISDM Source-drain current (pulsed) - 24 A - 1.5 V VSD (1) trr Forward on voltage ISD = 6 A, VGS = 0 V Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current - 315 ns - 2.8 µC - 17.5 A - 480 ns - 3.8 µC - 16 A Min Typ. Max Unit ±30 - - V ISD = 6 A, VDD = 60 V di/dt = 100 A/µs, (see Figure 18. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time Qrr Reverse recovery charge di/dt = 100 A/µs, IRRM Reverse recovery current (see Figure 18. Test circuit for inductive load switching and diode recovery times) ISD = 6 A,VDD = 60 V Tj = 150 °C 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 7. Gate-source Zener diode Symbol V (BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS = ± 1 mA, ID = 0 A The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DS9173 - Rev 7 page 4/23 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK and IPAK AM15528v1 ID (A) Figure 2. Thermal impedance for DPAK and IPAK GC20460 K 10µs S( on ) 100µs 100 D O pe m ratio ite n d by in th m is ax ar R ea is 10 1ms 10ms Li 1 10-1 Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 1 10 100 VDS (V) Figure 3. Safe operating area for TO-220 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 4. Thermal impedance for TO-220 AM15530v1 ID (A) 10 10µs s ai ) re (on si a DS th R in ax n io by m t ra pe ed O imit L 1 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 1 10 100 VDS (V) Figure 5. Output characteristics Figure 6. Transfer characteristics AM15531v1 ID (A) VGS =10V 10 8 8V 6 6 4 4 7V 2 0 DS9173 - Rev 7 2 6V 0 VDS =20V 10 9V 8 AM15532v1 ID (A) 4 8 12 16 VDS (V) 0 4 6 8 10 VGS (V) page 5/23 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage VGS (V) AM15533v1 VDS 12 (V) 600 10 500 8 400 6 300 4 200 2 100 VDS 0 0 4 8 0 Q g (nC) 12 Figure 9. Capacitance variations GADG090320201409MT RDS(on) (Ω) VGS=10V 1.20 0.80 0.40 1 2 3 6 5 4 7 ID(A) Figure 10. Output capacitance stored energy AM15535v1 C (pF) Figure 8. Static drain-source on-resistance 1000 Ciss AM17889v1 E os s (µJ ) 6 100 4 Coss 10 Crss 1 0.1 0.1 1 10 100 VDS (V) Figure 11. Normalized gate threshold voltage vs temperature AM15537v1 VGS(th) (norm) 400 600 800 VDS (V) Figure 12. Normalized on-resistance vs temperature AM15538v1 R DS(on) (norm) ID=3 A VGS =10 V 1.6 0.9 1.2 0.8 0.8 0.7 DS9173 - Rev 7 200 2 1 0.6 -50 0 0 2.4 ID=100 µA 1.1 2 0 50 100 TJ (°C) 0.4 -50 0 50 100 TJ (°C) page 6/23 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics (curves) Figure 13. Maximum avalanche energy vs starting TJ Figure 14. Normalized V(BR)DSS vs temperature AM15542v1 E AS (mJ) AM15541v1 V(BR)DSS (norm) ID=1mA 1.1 80 1.06 60 1.02 40 0.98 20 0 0 0.94 25 50 75 100 125 0.9 -50 TJ (°C) 0 50 100 TJ (°C) Figure 15. Source-drain diode forward characteristics AM15536v1 VSD (V) 1 TJ=-50°C 0.9 TJ=25°C 0.8 0.7 TJ=150°C 0.6 DS9173 - Rev 7 1 2 3 4 5 ISD(A) page 7/23 STD7N80K5, STP7N80K5, STU7N80K5 Test circuits 3 Test circuits Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 19. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 21. Switching time waveform Figure 20. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS9173 - Rev 7 page 8/23 STD7N80K5, STP7N80K5, STU7N80K5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type C2 package information Figure 22. DPAK (TO-252) type C2 package outline 0068772_type-C2_rev29 DS9173 - Rev 7 page 9/23 STD7N80K5, STP7N80K5, STU7N80K5 DPAK (TO-252) type C2 package information Table 8. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS9173 - Rev 7 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 10/23 STD7N80K5, STP7N80K5, STU7N80K5 DPAK (TO-252) type E package information 4.2 DPAK (TO-252) type E package information Figure 23. DPAK (TO-252) type E package outline 0068772_type-E_rev.29 DS9173 - Rev 7 page 11/23 STD7N80K5, STP7N80K5, STU7N80K5 DPAK (TO-252) type E package information Table 9. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 L4 DS9173 - Rev 7 Max. 2.74 0.89 1.27 1.02 page 12/23 STD7N80K5, STP7N80K5, STU7N80K5 DPAK (TO-252) type E package information Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_29 DS9173 - Rev 7 page 13/23 STD7N80K5, STP7N80K5, STU7N80K5 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS9173 - Rev 7 page 14/23 STD7N80K5, STP7N80K5, STU7N80K5 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS9173 - Rev 7 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 15/23 STD7N80K5, STP7N80K5, STU7N80K5 TO-220 type A package information 4.4 TO-220 type A package information Figure 27. TO-220 type A package outline 0015988_typeA_Rev_23 DS9173 - Rev 7 page 16/23 STD7N80K5, STP7N80K5, STU7N80K5 TO-220 type A package information Table 11. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS9173 - Rev 7 Typ. 0.03 0.10 page 17/23 STD7N80K5, STP7N80K5, STU7N80K5 IPAK (TO-251) type C package information 4.5 IPAK (TO-251) type C package information Figure 28. IPAK (TO-251) type C package outline 0068771_IK_typeC_rev15 DS9173 - Rev 7 page 18/23 STD7N80K5, STP7N80K5, STU7N80K5 IPAK (TO-251) type C package information Table 12. IPAK (TO-251) type C package mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.35 A1 0.90 1.00 1.10 b 0.66 0.79 b2 DS9173 - Rev 7 0.90 b4 5.23 5.33 5.43 c 0.46 0.59 c2 0.46 0.59 D 6.00 6.10 6.20 D1 5.20 5.37 5.55 E 6.50 6.60 6.70 E1 4.60 4.78 4.95 e 2.20 2.25 2.30 e1 4.40 4.50 4.60 H 16.18 16.48 16.78 L 9.00 9.30 9.60 L1 0.80 1.00 1.20 L2 0.90 1.08 1.25 θ1 3° 5° 7° θ2 1° 3° 5° page 19/23 STD7N80K5, STP7N80K5, STU7N80K5 Ordering information 5 Ordering information Table 13. Ordering information Order code Marking STD7N80K5 STP7N80K5 STU7N80K5 DS9173 - Rev 7 7N80K5 Package Packing DPAK Tape and reel TO-220 IPAK Tube page 20/23 STD7N80K5, STP7N80K5, STU7N80K5 Revision history Table 14. Document revision history Date Revision 17-Jul-2012 1 17-Oct-2012 2 Changes First release. Minor text changes in cover page Modified: title and ID value in cover page Minor text changes 19-Dec-2012 3 Added: IPAK package Updated: Section 4: Package mechanical data for IPAK 18-Mar-2013 4 09-Oct-2013 5 Modified: IAR value on Table 2 Updated: Section 4: Package mechanical data only for DPAK package The part number STF7N80K5 has been moved to a separate datasheet Minor text changes Updated title, description and features in cover page. Updated Table 2: "Absolute maximum ratings" and Table 4: 19-May-2017 6 "On/off states". Updated Section 4: "Package information". Minor text changes. 09-Sep-2020 DS9173 - Rev 7 7 The DPAK type A2 and IPAK type A package information have been removed from the datasheet. Minor text changes. page 21/23 STD7N80K5, STP7N80K5, STU7N80K5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 IPAK (TO-251) type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 DS9173 - Rev 7 page 22/23 STD7N80K5, STP7N80K5, STU7N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS9173 - Rev 7 page 23/23