N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh™ MOSFET
TYPE STU7NB90 STU7NB90I
s s s s s s
STU7NB90 STU7NB90I
VDSS 900 V 900 V
RDS(on) < 1.45 Ω < 1.45 Ω
ID 7.3 A 7.3 A
TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
1
2
3
Max220
Max220I
DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STU7NB90 900 900 ±30 7.3 4.6 29.2 170 1.36 4 –65 to 150 150 2500 7.3 (*) 4.6 (*) 29.2 (*) 60 0.47 STU7NB90I
Unit V V V A A A W W/°C V/ns V °C °C
(•)Pulse width limited by safe operating area
(1) I SD ≤7.3 A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Current Limited by Package
May 2001
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THERMAL DATA
Max220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.734 62.5 300 Max220I 2.1 °C/W °C/W °C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 7.3 600 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±30V Min. 900 1 50 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 µA VGS = 10 V, ID = 4 A Min. 2 Typ. 3 1.1 Max. 4 1.45 Unit V Ω
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 4 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 8 2120 225 23 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 450 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 720V, ID = 7.4A, VGS = 10V Min. Typ. 25 12 51 12.5 23.5 72 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 720V, ID = 7.4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 22 15 31 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7.3 A, VGS = 0 ISD = 7.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 700 6.3 18 Test Conditions Min. Typ. Max. 7.3 29.2 1.6 Unit A A V ns µC A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area for Max220
Safe Operating Area for Max220I
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Thermal Impedence for Max220 Thermal Impedence for Max220I
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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Max220 MECHANICAL DATA
DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.2 2.9 0.7 1.25 1.2 0.45 15.9 9 0.8 2.8 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3.4 0.354 0.031 0.110 0.096 0.396 0.520 0.118 MIN. 0.169 0.087 0.114 0.027 0.049 0.047 0.18 0.626 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133
D3
D2
D1
A
A2
C
D
b1
b2
E
b e
L1 L
A1
P011R
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I-Max220 MECHANICAL DATA
DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.6 1.95 0.7 1.25 1.2 0.45 15.9 12.5 0.6 1.75 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.75 2.15 0.93 1.4 1.38 0.6 16.3 12.9 1 2.15 2.64 10.35 13.6 3.4 MIN. 0.169 0.102 0.077 0.027 0.049 0.047 0.017 0.626 0.492 0.023 0.069 0.096 0.396 0.520 0.118 inch TYP. MAX. 0.181 0.108 0.084 0.036 0.055 0.054 0.023 0.641 0.508 0.039 0.084 0.104 0.407 0.535 0.133
P011S
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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