STU7NF25
N-channel 250 V, 0.29 Ω typ., 8 A STripFET™ II Power MOSFET
in IPAK package
Datasheet - production data
Features
TAB
Order code
VDSS
RDS(on) max.
ID
STU7NF25
250 V
0.42 Ω
8A
• 100% avalanche tested
• 175 °C junction temperature
3
2
1
Applications
IPAK
• Switching applications
Description
Figure 1. Internal schematic diagram
'ĆRUĆ7$%
*
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer
applications, and applications with low gate
charge driving requirements.
6
$0Y
Table 1. Device summary
Order code
Marking
Package
Packaging
STU7NF25
7NF25
IPAK
Tube
July 2013
This is information on a product in full production.
DocID025041 Rev 1
1/12
www.st.com
Contents
STU7NF25
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STU7NF25
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
250
V
VGS
Gate-source voltage
±20
V
Drain current (continuous) at TC = 25 °C
8
A
Drain current (continuous) at TC=100 °C
6
A
Drain current (pulsed)
32
A
PTOT
Total dissipation at TC = 25 °C
72
W
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Value
Unit
ID
IDM
(1)
1. Pulse width limited by safe operating area.
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
2.08
Rthj-amb
Thermal resistance junction-amb max
100
°C/W
Table 4. Avalanche data
Symbol
Parameter
IAV
Non-repetitive avalanche current
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAV, VDD=50 V)
DocID025041 Rev 1
Value
Unit
8
A
110
mJ
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12
Electrical characteristics
2
STU7NF25
Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
250
-
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 250 V
VDS = 250 V, Tc=125 °C
-
1
50
μA
μA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
-
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 μA
-
4
V
RDS(on)
Static drain-source
on-resistance
VGS= 10 V, ID= 4 A
0.29
0.42
Ω
Min.
Typ.
Max.
Unit
-
500
-
pF
-
90
-
pF
-
15
-
pF
-
16
-
nC
-
3.5
-
nC
-
8
-
nC
V(BR)DSS
2
V
Table 6. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS =25 V, f=1 MHz, VGS=0
VDD= 200 V, ID = 8 A
VGS =10 V
(see Figure 14)
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/12
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD=125 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13 and
Figure 18)
Fall time
DocID025041 Rev 1
Min.
Typ.
Max.
Unit
-
13
-
ns
-
10
-
ns
-
26
-
ns
-
6
-
ns
STU7NF25
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
ISDM
Source-drain current
Source-drain current
(pulsed)
VSD
Forward on voltage
ISD
Test conditions
ISD=8 A, VGS=0 V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 8 A, di/dt = 100 A/μs,
VDD = 50 V
(see Figure 15)
ISD = 8 A, di/dt = 100 A/μs,
VDD = 50 V, TJ= 150 °C
(see Figure 15)
DocID025041 Rev 1
Min.
Typ.
Max.
Unit
-
8
32
A
A
-
1.5
V
-
115
ns
-
470
nC
-
8.5
A
-
130
ns
-
580
nC
-
9.5
A
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12
Electrical characteristics
2.1
STU7NF25
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
ID
(A)
AM11280v1
10
10µs
on
a
DS
(
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
)
is
Tj=175°C
Tc=25°C
Single pulse
1
100µs
1ms
10ms
0.1
0.1
10
1
VDS(V)
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM11281v1
ID
(A)
VGS=10V
AM11282v1
ID
(A)
VDS=25V
20
20
6V
15
15
10
10
5
5
4V
0
0
5
10
15
20
25
Figure 6. Normalized BVDSS vs temperature
AM11283v1
BVDSS
(norm)
0
0
VDS(V)
ID=1mA
1.2
2
4
8
6
VGS(V)
10
Figure 7. Static drain-source on-resistance
AM11284v1
RDS(on)
(Ω)
VGS=10V
0.35
1.0
0.30
0.8
0.25
0.6
0.20
0.4
0.15
0.2
0
-100
6/12
-50
0.10
0
50
100
150
TJ(°C)
DocID025041 Rev 1
0
1
2
3
4
5
6
7
8
ID(A)
STU7NF25
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
AM11285v1
VDS
VDD=200V
ID=8A
12
(V)
VDS
200
10
Figure 9. Capacitance variations
AM11286v1
C
(pF)
1000
Ciss
150
8
100
6
Coss
100
4
10
Crss
50
2
0
0
8
4
16
12
Figure 10. Normalized gate threshold voltage vs
temperature
AM11287v1
VGS(th)
(norm)
1
0.1
0
Qg(nC)
1
10
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM11288v1
RDS(on)
(norm)
ID=250µA
100
ID=4A
VGS=10V
2.5
1.0
2.0
0.8
1.5
1.0
0.6
0.5
0.4
-100
-50
0
50
100
150
TJ(°C)
0
-100
-50
0
50
100
150
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM11289v1
VSD
(V)
TJ=25°C
0.9
TJ=-50°C
0.8
0.7
TJ=175°C
0.6
0.5
0.4
0
2
4
6
8
ISD(A)
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12
Test circuits
3
STU7NF25
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/12
0
DocID025041 Rev 1
10%
AM01473v1
STU7NF25
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 9. IPAK (TO-251) mechanical data
mm.
DIM
min.
typ.
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
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1.00
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12
Package mechanical data
STU7NF25
Figure 19. IPAK (TO-251) drawing
0068771_K
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STU7NF25
5
Revision history
Revision history
Table 10. Document revision history
Date
Revision
24-Jul-2013
1
Changes
First release.
DocID025041 Rev 1
11/12
12
STU7NF25
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