STU80N4F6

STU80N4F6 N-channel 40 V, 5.8 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a IPAK package Datasheet − production data Features TAB Order code VDS RDS(on) max ID STU80N4F6 40 V 6.3 mΩ 80 A • Low gate charge 3 • Very low on-resistance 2 1 • High avalanche ruggedness IPAK Applications • Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 'Ć7$% * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STU80N4F6 80N4F6 IPAK Tube February 2014 This is information on a product in full production. DocID023839 Rev 4 1/13 www.st.com 13 Contents STU80N4F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID023839 Rev 4 STU80N4F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 56 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 70 W IAV Avalanche current, repetitive or not-repetitive (pulse width limited by TJmax) 40 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAV, VDD = 25 V) 149 mJ Derating factor 0.47 W/°C ID (1) ID(1) IDM (2) PTOT Tstg Storage temperature °C -55 to 175 Tj Max. operating junction temperature °C 1. Current limited by package. 2. Pulse width limited by safe operating area Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-amb Thermal resistance junction-ambient max 100 °C/W DocID023839 Rev 4 3/13 Electrical characteristics 2 STU80N4F6 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 μA, VGS = 0 IDSS Zero gate voltage VDS = 40 V drain current (VGS = 0) VDS = 40 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. 40 Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance Unit V 1 100 μA μA ± 100 nA 4 V 5.8 6.3 mΩ Min. Typ. Max. Unit - 2150 - pF - 335 - pF - 160 - pF - 36 - nC - 11 - nC - 9 - nC Min. Typ. Max Unit - 10.5 - ns - 7.6 - ns - 46.1 - ns - 11.9 - ns VGS = ± 20 V VGS(th) Max. 2 VGS = 10 V, ID = 40 A Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 14) Table 6. Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 20 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Fall time DocID023839 Rev 4 STU80N4F6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 80 A ISDM (1) Source-drain current (pulsed) - 320 A VSD (2) Forward on voltage - 1.3 V ISD trr ISD = 40 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 80 A, di/dt = 100 A/μs VDD = 32 V (see Figure 17) - 41.1 ns - 43.6 nC - 2.1 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID023839 Rev 4 5/13 Electrical characteristics 2.1 STU80N4F6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15599v1 ID (A) s ai re n) s a (o thi RDS n i x on ma y ati er d b p e O it Lim 100 100µs 10 1ms 10ms Tj=175°C Tc=25°C 1 Single pulse 0.1 0.1 10 1 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM15600v1 ID (A) VGS= 7, 8, 9, 10 V 200 AM15601v1 ID (A) VDS= 2 V 180 140 VGS= 6 V 120 150 100 80 100 60 VGS= 5 V 40 50 20 VGS= 4 V 0 0 0 2 VDS(V) 4 Figure 6. Gate charge vs gate-source voltage AM15602v1 VGS (V) VDD=20V 12 2 3 4 5 6 8 9 10 VGS(V) Figure 7. Static drain-source on-resistance AM15603v1 RDS(on) (mΩ) VGS= 10V 6.5 ID=80A 7 10 6 8 5.5 6 5 4 4.5 2 4 0 0 6/13 10 20 30 40 Qg(nC) DocID023839 Rev 4 0 20 40 60 80 ID(A) STU80N4F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Drain-source diode forward characteristics AM15352v1 C (pF) 2500 AM15604v1 VSD (V) TJ=-50°C 1.0 Ciss 2000 0.8 1500 0.6 1000 0.4 10 30 20 40 Coss Crss VDS(V) Figure 10. Normalized gate threshold voltage vs temperature AM15354v1 VGS(th) (norm) 0 0 20 40 60 80 ISD(A) Figure 11. Normalized on-resistance vs temperature AM15356v1 RDS(on) (norm) VGS=10V ID=40A 1.2 1 TJ=25°C 0.2 500 0 0 TJ=150°C 2 ID=250 µA 1.5 0.8 0.6 1 0.4 0.5 0.2 0 -75 -50 -25 0 25 50 75 100 125 TJ(°C) 0 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Normalized V(BR)DSS vs temperature AM15353v1 V(BR)DSS (norm) 1.3 ID = 1mA 1.2 1.1 1 0.9 0.8 0.7 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) DocID023839 Rev 4 7/13 Test circuits 3 STU80N4F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform Inductive Load Turn - off V(BR)DSS Id VD 90%Vds 90%Id td(v) IDM Vgs 90%Vgs on ID )) Vgs(I(t)) VDD VDD 10%Id 10%Vds Vds tr(v) AM01472v1 8/13 DocID023839 Rev 4 tf(i) tc(off) AM05540v1 STU80N4F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID023839 Rev 4 9/13 Package mechanical data STU80N4F6 Figure 19. IPAK (TO-251) drawing 0068771_K 10/13 DocID023839 Rev 4 STU80N4F6 Package mechanical data Table 8. IPAK (TO-251) mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID023839 Rev 4 1.00 11/13 Revision history 5 STU80N4F6 Revision history Table 9. Document revision history 12/13 Date Revision Changes 26-Oct-2012 1 Initial release. 01-Mar-2013 2 – Added: IPAK package – The part number STI80N4F6 has been moved to a separate datasheet – Added: Figure 2, 3, 4, 5, 6, 7 and 9 05-Mar-2013 3 – Minor text changes – Modified: Table 3 28-Feb-2014 4 – The part number STD80N4F6 has been moved to a separate datasheet – Minor text changes DocID023839 Rev 4 STU80N4F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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