STU85N3LH5

STD85N3LH5 STP85N3LH5, STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features Type STD85N3LH5 STP85N3LH5 STU85N3LH5 ■ ■ ■ ■ VDSS 30 V RDS(on) max. < 0.005 Ω ID 3 1 3 2 1 80 A DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 1 3 2 TO-220 Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Marking Package DPAK 85N3LH5 TO-220 Tube IPAK Packaging Tape and reel Order codes STD85N3LH5 STP85N3LH5 STU85N3LH5 July 2010 Doc ID 13833 Rev 7 1/16 www.st.com 16 Contents STD85N3LH5, STP85N3LH5, STU85N3LH5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ............................................... 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 13833 Rev 7 STD85N3LH5 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VDS VGS ID (1) ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-source voltage (VGS = 0) @ TJMAX Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 30 35 ± 22 80 55 320 70 0.47 165 -55 to 175 175 Unit V V V A A A W W/°C mJ °C °C PTOT (3) EAS Single pulse avalanche energy Storage temperature Max. operating junction temperature Tstg Tj 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Tl Thermal resistance Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose 62.5 100 275 DPAK 2.14 100 IPAK °C/W °C/W °C/W °C Unit Doc ID 13833 Rev 7 3/16 Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) Static Parameter Drain-source breakdown Voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Test conditions ID = 250 µA, VGS= 0 VDS = 30 V VDS = 30 V,Tc = 125 °C VGS = ± 22 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 40 A SMD version 1 1.8 0.042 Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA V Ω Ω Ω Ω 2.5 0.005 RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A SMD version VGS = 5 V, ID = 40 A 0.0046 0.0054 0.0052 0.0065 0.0058 0.0071 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Qgs1 Qgs2 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre Vth gate-to-source charge Post Vth gate-to-source charge Test conditions Min. Typ. 1850 380 58 14 6.8 4.7 2.3 4.5 Max. Unit pF pF pF nC nC nC nC nC VDS = 25 V, f=1 MHz, VGS = 0 VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 VDD = 15 V, ID = 80 A VGS = 5 V Figure 16 f = 1 MHz gate bias Bias = 0 test signal level = 20 mV open drain RG Gate input resistance 1.2 Ω 4/16 Doc ID 13833 Rev 7 STD85N3LH5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching on/off (inductive load) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V Figure 15 Min. Typ. 6 14 23.6 10.8 Max. Unit ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, VGS = 0 ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V Figure 17 31.8 26.1 1.6 Test conditions Min. Typ. Max. 80 320 1.1 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13833 Rev 7 5/16 Electrical characteristics STD85N3LH5, STP85N3LH5, STU85N3LH5 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. ID (A) 160 140 120 100 80 60 40 20 0 0 Transfer characteristics AM03359v1 1 2 3 VGS(V) Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/16 Doc ID 13833 Rev 7 STD85N3LH5 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 13833 Rev 7 7/16 Test circuit STD85N3LH5, STP85N3LH5, STU85N3LH5 3 Test circuit Figure 14. Gate charge test circuit VDD 12V 2200 Figure 13. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. µF 3.3 µF VDD Vi=20V=VGMAX 2200 µF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100µH B D G 3.3 µF 1000 µF L VD 2200 µF 3.3 µF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform V(BR)DSS VD Figure 18. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/16 Doc ID 13833 Rev 7 STD85N3LH5 Figure 19. Gate charge waveform Id Vds Vgs Test circuit Vgs(th) Qgs1 Qgs2 Qgd Doc ID 13833 Rev 7 9/16 Package mechanical data STD85N3LH5, STP85N3LH5, STU85N3LH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 13833 Rev 7 STD85N3LH5 Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S Doc ID 13833 Rev 7 11/16 Package mechanical data STD85N3LH5, STP85N3LH5, STU85N3LH5 TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H 12/16 Doc ID 13833 Rev 7 STD85N3LH5 Package mechanical data TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G Doc ID 13833 Rev 7 13/16 Packaging mechanical data STD85N3LH5, STP85N3LH5, STU85N3LH5 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 14/16 Doc ID 13833 Rev 7 STD85N3LH5 Revision history 6 Revision history Table 8. Date 19-Oct-2007 20-Feb-2008 Document revision history Revision 1 2 First release Minor text changes to improve readability – – – – Added new package, mechanical data: TO-220 Figure 2: Safe operating area has been corrected Figure 7: Static drain-source on resistance updated New value on Table 2: Absolute maximum ratings Changes 21-Jul-2008 3 20-Aug-2008 25-Sep-2008 22-Jan-2009 01-Jul-2010 4 5 6 7 Added max value on VGS(th) (Table 4) VGS values has been changed on Table 2 and Table 4 Corrected value on Table 3: Thermal resistance VDS values has been changed on Table 4 Doc ID 13833 Rev 7 15/16 STD85N3LH5, STP85N3LH5, STU85N3LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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