STU8N65M5

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω 7 A MDmesh™ V Power MOSFET , in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK Features Type STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 ■ ■ ■ ■ ■ ■ VDSS @ TJmax RDS(on) max. ID 3 1 3 1 2 DPAK 3 1 2 710 V < 0.6 Ω 7A TO-220FP TO-220 Worldwide best RDS(on) * area Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Figure 1. Internal schematic diagram I²PAK 3 3 12 1 1 3 2 D²PAK IPAK Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 July 2011 Marking Package D²PAK DPAK TO-220FP I²PAK TO-220 IPAK Doc ID 16531 Rev 3 Packaging Tape and reel Tape and reel Tube Tube Tube Tube 1/25 www.st.com 25 8N65M5 Contents STB/D/F/I/P/U8N65M5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 2/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220, D²PAK I²PAK IPAK DPAK, ± 25 7 4.4 28 70 2 120 15 2500 -55 to 150 150 7 (1) (1) (1) Unit TO-220FP V A A A W A mJ V/ns V °C °C VGS ID ID IDM (2) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Storage temperature Max. operating junction temperature 4.4 28 PTOT IAR EAS dv/dt (3) VISO Tstg Tj 25 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 7A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS. Table 3. Symbol Thermal data Value Parameter DPAK IPAK TO-220 I²PAK D²PAK TO-220FP Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb max Maximum lead temperature for soldering purpose 50 100 Unit Rthj-case Rthj-amb Rthj-pcb(1) 1.79 62.5 30 5 62.5 °C/W °C/W °C/W Tl 300 300 °C 1. When mounted on 1 inch² FR-4 board, 2oz Cu. Doc ID 16531 Rev 3 3/25 Electrical characteristics STB/D/F/I/P/U8N65M5 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 650 1 100 100 3 4 0.56 5 0.6 Typ. Max. Unit V µA µA nA V Ω VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C Gate-body leakage current (VDS = 0) VGS = ± 25 V Gate threshold voltage VDS = VGS, ID = 250 µA Static drain-source on resistance VGS = 10 V, ID = 3.5 A Table 5. Symbol Ciss Coss Crss Co(er)(1) Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance energy related Equivalent output capacitance time related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 690 18 2 Max. Unit pF pF pF VDS = 100 V, f = 1 MHz, VGS = 0 - - VGS = 0, VDS = 0 to 520 V - 17 - pF Co(tr)(2) VGS = 0, VDS = 0 to 520 V - 52 - pF RG Qg Qgs Qgd f = 1 MHz open drain VDD = 520 V, ID = 3.5 A, VGS = 10 V (see Figure 19) - 2.4 15 3.6 6 - Ω nC nC nC - - 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Electrical characteristics Table 6. Symbol td(off) tr(V) tc(off) tf(i) Switching times Parameter Turn-off delay time Rise time Cross time Fall time Test conditions VDD = 400 V, ID = 4A, RG = 4.7 Ω, VGS = 10 V (see Figure 20) (see Figure 23) Min. Typ. 50 14 20 11 Max. Unit ns ns ns ns - - Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, VGS = 0 ISD = 7 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) ISD = 7 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) Test conditions Min. 200 1.6 16 263 1.9 15 Typ. Max. Unit 7 28 1.5 A A V ns µC A ns µC A - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 16531 Rev 3 5/25 Electrical characteristics STB/D/F/I/P/U8N65M5 2.1 Figure 2. ID (A) Electrical characteristics (curves) Safe operating area for TO-220, I²PAK, D²PAK AM08194v1 Figure 3. Thermal impedance for TO-220, I²PAK, D²PAK O Li per m at ite io d ni by n m this ax a R rea is 10 D S( 10µs 100µs 1ms 10ms 1 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 on ) 1 10 100 VDS(V) Figure 4. ID (A) Safe operating area for DPAK, IPAK Figure 5. AM08195v1 Thermal impedance for DPAK, IPAK O Li per m at ite io d ni by n m this ax a R rea D S( o n) is 10 10µs 100µs 1ms 10ms 1 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. ID (A) Safe operating area for TO-220FP AM08196v1 Figure 7. Thermal impedance for TO-220FP O Li per m at ite io d ni by n m this ax a R rea is D S( on ) 10 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 1 0.1 0.01 0.1 1 10 100 VDS(V) 6/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Figure 8. ID (A) 12 10 8 6 4 2 0 0 6V 4 2 0 3 Electrical characteristics Figure 9. AM08197v1 Output characteristics VGS=10V 7V 7.5V Transfer characteristics AM08198v1 ID (A) 12 VDS=20V 10 6.5V 8 6 5.5V 5 10 15 5V VDS(V) 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance VGS (V) 12 10 8 300 6 200 4 2 0 0 5 10 15 100 0 Qg(nC) 0.52 0.54 VDS AM03195v1 VDD=520V ID=3.5A VGS 500 400 RDS(on) (Ohm) VGS=10V 0.58 AM08200v1 0.56 0.50 0 2 4 6 ID(A) Figure 12. Capacitance variations C (pF) AM08202v1 Figure 13. Output capacitance stored energy Eoss (µJ) 3.5 AM08201v1 1000 Ciss 3.0 2.5 100 2.0 1.5 10 Coss Crss 1.0 0.5 0 0 100 200 300 400 500 600 VDS(V) 1 0.1 1 10 100 VDS(V) Doc ID 16531 Rev 3 7/25 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature VGS(th) (norm) STB/D/F/I/P/U8N65M5 Figure 15. Normalized on resistance vs temperature RDS(on) (norm) AM08204v1 AM08205v1 1.10 2.0 1.00 1.5 0.90 VGS=10V ID=3.5A 0.80 1.0 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature (1) E (μJ) AM08206v1 BVDSS 1.07 1.05 AM08203v1 (norm) ID=4A VCL=400V VGS=10V ID=1mA Eoff 100 Eon 1.03 1.01 0.99 10 0.97 0.95 1 0 10 20 30 40 RG(Ω) 0.93 -50 -25 0 25 50 75 100 TJ(°C) 1. Eon including reverse recovery of a SiC diode 8/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Test circuits 3 Test circuits Figure 19. Gate charge test circuit VDD 12V 2200 Figure 18. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. μF 3.3 μF VDD Vi=20V=VGMAX 2200 μF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100μH B D G 3.3 μF 1000 μF L VD 2200 μF 3.3 μF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform V(BR)DSS VD Figure 23. Switching time waveform Concept waveform for Inductive Load Turn-off Id 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD Vds 10%Vds 10%Id Trise Tfall AM01472v1 Tcross -over AM05540v1 Doc ID 16531 Rev 3 9/25 Package mechanical data STB/D/F/I/P/U8N65M5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Table 8. Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 Typ. Package mechanical data TO-220FP mechanical data mm Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2.7 10.4 30.6 10.6 3.6 16.4 9.3 3.2 Figure 24. TO-220FP drawing mechanical data L7 E A B D Dia L6 L5 F1 F2 F H G1 G L2 L3 L4 7012510_Rev_K Doc ID 16531 Rev 3 11/25 Package mechanical data Table 9. Dim. Min. A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 0° 4.88 15 2.49 2.29 1.27 1.30 0.4 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 Typ. STB/D/F/I/P/U8N65M5 D²PAK (TO-263) mechanical data mm Max. 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 5.28 15.85 2.69 2.79 1.40 1.75 8° 12/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Figure 25. D²PAK (TO-263) drawing Package mechanical data 0079457_S Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 16531 Rev 3 13/25 Package mechanical data STB/D/F/I/P/U8N65M5 Table 10. DIM. I²PAK (TO-262) mechanical data mm. min. typ max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Figure 27. I²PAK (TO-262) drawing 0004982_Rev_H 14/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Package mechanical data Table 11. Dim. TO-220 type A mechanical data mm Min. Typ. Max. 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 4.40 0.61 1.14 0.48 15.25 ∅P Q Doc ID 16531 Rev 3 15/25 Package mechanical data Figure 28. TO-220 type A drawing STB/D/F/I/P/U8N65M5 0015988_typeA_Rev_S 16/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Package mechanical data Table 12. Dim. DPAK (TO-252) mechanical data mm Min. Typ. Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 5.10 6.40 4.70 2.28 4.40 9.35 1 2.80 0.80 0.60 0.20 0° 8° 1 4.60 10.10 1.50 6.60 A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 Doc ID 16531 Rev 3 17/25 Package mechanical data Figure 29. DPAK (TO-252) drawing STB/D/F/I/P/U8N65M5 0068772_H Figure 30. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 b. All dimension are in millimeters 18/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Package mechanical data Table 13. DIM. IPAK (TO-251) mechanical data mm. min. typ max. 2.40 1.10 0.90 0.95 5.20 0.3 0.45 0.48 6.00 6.40 2.28 4.40 16.10 9.00 0.80 0.80 10 o A A1 b b2 b4 B5 c c2 D E e e1 H L L1 L2 V1 2.20 0.90 0.64 5.40 0.60 0.60 6.20 6.60 4.60 9.40 1.20 1.00 Doc ID 16531 Rev 3 19/25 Package mechanical data Figure 31. IPAK (TO-251) drawing STB/D/F/I/P/U8N65M5 0068771_H AM09214V1 20/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Packaging mechanical data 5 Packaging mechanical data Table 14. D²PAK (TO-263) tape and reel mechanical data Tape mm Dim. Min. A0 B0 D D1 E F K0 P0 P1 P2 R T W 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 Max. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 Base qty Bulk qty 1000 1000 A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 Dim. Min. Max. 330 Reel mm Doc ID 16531 Rev 3 21/25 Packaging mechanical data STB/D/F/I/P/U8N65M5 Table 15. DPAK (TO-252) tape and reel mechanical data Tape mm Reel mm Dim. Min. Max. 7 10.6 12.1 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 0.25 15.7 0.35 16.3 1.85 7.6 2.75 4.1 8.1 2.1 Base qty. Bulk qty. 2500 2500 1.6 A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 Min. Max. 330 6.8 10.4 Dim. A0 B0 B1 D D1 E F K0 P0 P1 P2 R T W 22/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Figure 32. Tape for DPAK and D²PAK 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D Packaging mechanical data P2 E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 33. Reel for DPAK and D²PAK REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C A N T Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 16531 Rev 3 23/25 Revision history STB/D/F/I/P/U8N65M5 6 Revision history Table 16. Date 23-Oct-2009 14-Oct-2010 05-Jul-2011 Document revision history Revision 1 2 3 First release Document status promoted from preliminary data to datasheet. Table 7: Source drain diode has been updated. Changes 24/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 16531 Rev 3 25/25