STU8N80K5

STP8N80K5, STU8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFET in TO-220 and IPAK packages Datasheet − production data Features Order codes VDS RDS(on)max. ID PTOT 800 V 0.95 Ω 6A 110 W STP8N80K5 TAB TAB STU8N80K5 3 2 1 3 1 2 • Worldwide best FOM (figure of merit) • Ultra low gate charge IPAK • 100% avalanche tested TO-220 • Zener-protected Applications Figure 1. Internal schematic diagram D(2,TAB) • Switching applications Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package STP8N80K5 TO-220 8N80K5 Tube STU8N80K5 March 2013 This is information on a product in full production. Packaging IPAK DocID023544 Rev 4 1/16 www.st.com 16 Contents STP8N80K5, STU8N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 DocID023544 Rev 4 STP8N80K5, STU8N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Value Unit ± 30 V Gate-source voltage ID Drain current TC = 25 °C 6 A ID Drain current TC = 100 °C 4 A IDM (1) Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 °C 110 W IAR (2) Max current during repetitive or single pulse avalanche 2 A EAS (3) Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 114 mJ dv/dt (4) Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C dv/dt (5) Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. Pulse width limited by TJmax. 3. Starting TJ = 25 °C, ID=IAS, VDD= 50 V 4. ISD ≤ 6 A, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS 5. VDS ≤ 640 V Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-amb max. DocID023544 Rev 4 IPAK 1.14 62.5 °C/W 100 °C/W 3/16 Electrical characteristics 2 STP8N80K5, STU8N80K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 Min. Typ. Max. Unit 800 V VDS = 800 V, 1 μA VDS = 800 V, Tc=125 °C 50 μA Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 3 A 0.8 0.95 Ω Min. Typ. Max. Unit - 450 - pF - 50 - pF IDSS IGSS Zero gate voltage drain current (VGS = 0) 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1 - pF Equivalent capacitance time related - 57 - pF - 24 - pF Co(tr)(1) VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 640 V Co(er) (2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain - 6 - Ω Qg Total gate charge - 16.5 - nC Qgs Gate-source charge - 3.2 - nC Qgd Gate-drain charge VDD = 640 V, ID = 6 A VGS =10 V (see Figure 18) - 11 - nC 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/16 DocID023544 Rev 4 STP8N80K5, STU8N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 400 V, ID = 3 A, RG=4.7 Ω, VGS=10 V (see Figure 20) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 12 - ns - 14 - ns - 32 - ns - 20 - ns Min. Typ. Max. Unit 6 A 24 A 1.5 V Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Source-drain current - Source-drain current (pulsed) Forward on voltage ISD= 6 A, VGS=0 - trr Reverse recovery time - 300 ns Qrr Reverse recovery charge - 3 μC IRRM Reverse recovery current ISD= 6 A, VDD= 60 V di/dt = 100 A/μs, (see Figure 19) - 20 A - 415 ns - 3.8 μC - 18 A Min Typ. Max. Unit 30 - - V trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 6 A,VDD= 60 V di/dt=100 A/μs, Tj=150 °C (see Figure 19) Pulsed: pulse duration = 300μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID023544 Rev 4 5/16 Electrical characteristics 2.1 STP8N80K5, STU8N80K5 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 AM15632v1 ID (A) 10 ) on S( is D th R x in n ma o y ti ra d b e e p O imit L 1 10µs 100µs is ea ar 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 10 1 VDS(V) 100 Figure 4. Safe operating area for IPAK Figure 5. Thermal impedance for IPAK AM15630v1 ID (A) 10µs 10 is ea ) ar S(on sRon limit i D th R x in n ma o ti by ra pe ed O imit L 1 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 1 10 VDS(V) 100 Figure 6. Output characteristics Figure 7. Transfer characteristics AM15633v1 ID (A) AM15634v1 ID (A) VGS=10, 11V 12 9V 10 10 8 8 8V 6 6 4 7V 2 6V 0 0 6/16 VDS=20V 12 4 8 12 16 4 2 0 VDS(V) DocID023544 Rev 4 5 6 7 8 9 10 VGS(V) STP8N80K5, STU8N80K5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage VGS (V) VDS AM15635v1 VDS VDD=640V ID=6A 12 (V) 600 10 500 8 400 6 300 4 200 2 100 Figure 9. Static drain-source on-resistance AM15636v1 RDS(on) (Ω) VGS=10V 1.6 1.2 0.8 0.4 0 0 8 4 12 16 Figure 10. Capacitance variations 1 3 2 4 5 6 ID(A) Figure 11. Output capacitance stored energy AM15637v1 C (pF) 0 0 Qg(nC) AM15638v1 Eoss (µJ) 1000 6 Ciss 100 4 Coss 2 10 Crss 1 0.1 1 10 100 Figure 12. Normalized gate threshold voltage vs. temperature AM15639v1 VGS(th) (norm) 0 0 VDS(V) ID=100µA VDS=VGS 200 400 600 VDS(V) Figure 13. Normalized on-resistance vs. temperature AM15640v1 RDS(on) (norm) VGS=10V ID=3 A 2.4 1 2 1.6 0.8 1.2 0.6 0.8 0.4 -50 0 50 100 TJ(°C) 0.4 -50 DocID023544 Rev 4 0 50 100 TJ(°C) 7/16 Electrical characteristics STP8N80K5, STU8N80K5 Figure 14. Drain-source diode forward characteristics AM15641v1 VSD (V) TJ=-50°C Figure 15. Normalized VDS vs. temperature AM15642v1 VDS (norm) 1.1 0.9 1.06 TJ=25°C 0.8 ID = 1mA 1.02 0.7 0.98 TJ=150°C 0.6 0.5 1 0.94 0.9 2 4 3 5 ISD(A) Figure 16. Maximum avalanche energy vs. starting TJ AM15643v1 EAS (mJ) VDD=50V ID=2A 100 80 60 40 20 0 0 8/16 40 80 120 TJ(°C) DocID023544 Rev 4 -50 0 50 100 TJ(°C) STP8N80K5, STU8N80K5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID023544 Rev 4 10% AM01473v1 9/16 Package mechanical data 4 STP8N80K5, STU8N80K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID023544 Rev 4 STP8N80K5, STU8N80K5 Package mechanical data Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID023544 Rev 4 11/16 Package mechanical data STP8N80K5, STU8N80K5 Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S 12/16 DocID023544 Rev 4 STP8N80K5, STU8N80K5 Package mechanical data Table 10. IPAK (TO-251) mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID023544 Rev 4 1.00 13/16 Package mechanical data STP8N80K5, STU8N80K5 Figure 24. IPAK (TO-251) drawing 0068771_K 14/16 DocID023544 Rev 4 STP8N80K5, STU8N80K5 5 Revision history Revision history Table 11. Document revision history Date Revision 06-Aug-2012 1 First release. 2 – Minor text changes in cover page – Updatd: PTOT value for DPAK, TO-220 and IPAK in Table 2, Rthj-case value for DPAK in Table 3, VSD value in Table 7 – Deleted TI in Table 3 – Updated Section 4: Package mechanical data for DPAK and IPAK 21-Mar-2013 3 – Minor text changes – Added: Section 2.1: Electrical characteristics (curves) – Modified: Figure 1, IAR, IAS, note 4 on Table 2, RDS(on) typical value on Table 4, typical values on Table 5, 6 and 7 – Updated: Section 4: Package mechanical data – The part numbers STF8N80K5, STFI8N80K5 and STD8N80K5 have been moved to the separate datasheets 27-Mar-2013 4 Added: MOSFET dv/dt ruggedness on Table 2 16-Oct-2012 Changes DocID023544 Rev 4 15/16 STP8N80K5, STU8N80K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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