STU9NC90ZI

N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU8NC90Z STU9NC90ZI s s s s s s STU8NC90Z STU8NC90ZI VDSS 900 V 900 V RDS(on) < 1.38Ω < 1.38Ω ID 7A 7A TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 Max220 I-Max220 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU8NC90Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -–65 to 150 150 (1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX (*)Limited only by maximum temperature allowed Value STU8NC90ZI 900 900 ±25 7 4.4 28 160 1.28 ±50 4 3 2000 7(*) 4.4(*) 28(*) 55 0.44 Unit V V V A A A W W/°C mA KV V/ns V °C °C (•)Pulse width limited by safe operating area Sep 2000 1/10 STU8NC90Z/STU8NC90ZI THERMAL DATA Max220 Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.78 30 0.1 300 I-Max220 2.27 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 7 430 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20V Min. 900 1 1 50 ±10 Typ. Max. Unit V V/°C µA µA µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 3.8A VDS > ID(on) x RDS(on)max, VGS = 10V 7 Min. 3 Typ. 4 1.1 Max. 5 1.38 Unit V Ω A DYNAMIC Symbol gfs Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.8A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 9 3550 205 25 Max. Unit S pF pF pF 2/10 STU8NC90Z/STU8NC90ZI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400V, ID = 4A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 720V, ID = 8 A, VGS = 10V Min. Typ. 36 12 73 18 27 102 Max. Unit ns ns nC nC nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 720V, ID = 8 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 36 45 77 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, VGS = 0 ISD = 8 A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 860 10 24 Test Conditions Min. Typ. Max. 7 28 1.6 Unit A A V ns µC A GATE-SOURCE ZENER DIODE Symbol BVGSO αT Rz Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs=± 1mA (Open Drain) T=25°C Note(3) IGS = 50 mA, VGS = 0 Min. 25 1.3 90 Typ. Max. Unit V 10-4/°C Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU8NC90Z/STU8NC90ZI Safe Operating Area For Max220 Safe Operating Area For I-Max220 Thermal Impedance For Max220 Thermal Impedance For I-Max220 Output Characteristics Transfer Characteristics 4/10 STU8NC90Z/STU8NC90ZI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/10 STU8NC90Z/STU8NC90ZI Source-drain Diode Forward Characteristics 6/10 STU8NC90Z/STU8NC90ZI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STU8NC90Z/STU8NC90ZI Max220 MECHANICAL DATA DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.2 2.9 0.7 1.25 1.2 0.45 15.9 9 0.8 2.8 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3.4 0.354 0.031 0.110 0.096 0.396 0.520 0.118 MIN. 0.169 0.087 0.114 0.027 0.049 0.047 0.18 0.626 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133 D3 D2 D1 A A2 C D b1 b2 E b e L1 L A1 P011R 8/10 STU8NC90Z/STU8NC90ZI I-Max220 MECHANICAL DATA DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.6 1.95 0.7 1.25 1.2 0.45 15.9 12.5 0.6 1.75 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.75 2.15 0.93 1.4 1.38 0.6 16.3 12.9 1 2.15 2.64 10.35 13.6 3.4 MIN. 0.169 0.102 0.077 0.027 0.049 0.047 0.017 0.626 0.492 0.023 0.069 0.096 0.396 0.520 0.118 inch TYP. MAX. 0.181 0.108 0.084 0.036 0.055 0.054 0.023 0.641 0.508 0.039 0.084 0.104 0.407 0.535 0.133 P011S 9/10 STU8NC90Z/STU8NC90ZI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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