STULED625

STDLED625, STULED625 N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET in DPAK and IPAK Datasheet − production data Features Order codes STDLED625 STULED625 VDS RDS(on) max. 620 V 1.6 Ω 3 3 DPAK ) s ( ct 25 W 5.0 A 70 W u d o 2 • 100% avalanche tested 1 1 PTOT ID IPAK • Extremely high dv/dt capability r P e • Gate charge minimized • Very low intrinsic capacitance Figure 1. Internal schematic diagram ) (s t c u G(1) d o r t e l o s b OApplications • Zener-protected D(2,TAB) P e t e l o • Improved diode reverse recovery characteristics • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies. S(3) AM01476v1 s b O Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel IPAK Tube STDLED625 LED625 STULED625 August 2013 This is information on a product in full production. DocID025167 Rev 1 1/18 www.st.com 18 Contents STDLED625, STULED625 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/18 DocID025167 Rev 1 STDLED625, STULED625 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 620 V VGS Gate-source voltage ± 30 V (1) A A ID Drain current (continuous) at TC = 25 °C 5.0 ID Drain current (continuous) at TC = 100 °C 3.5(1) IDM (2) PTOT Drain current (pulsed) 20.0 Total dissipation at TC = 25 °C Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max.) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt(3) Peak diode recovery voltage slope di/dt(3) Diode reverse recovery current slope ct Insulation withstand voltage (AC) TJ Tstg Operating junction temperature Storage temperature u d o 4.2 r P e let o s b VISO ) s ( ct A 70 IAR (s) (1) W A 120 mJ 12 V/ns 400 A/µs V -O - 55 to 150 °C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. u d o 3. ISD ≤ ID, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS. e t e l Pr Symbol O o s b Table 3. Thermal data Value Parameter Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-amb max. Rthj-pcb Thermal resistance junction-pcb max. TJ Unit IPAK Maximum lead temperature for soldering purpose DocID025167 Rev 1 DPAK 1.79 °C/W 62.50 °C/W 50 300 °C/W °C/W 3/18 Electrical characteristics 2 STDLED625, STULED625 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS VDS = 620 V Zero gate voltage drain current (VGS = 0) VDS = 620 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Max. 620 V Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source onVGS = 10 V, ID = 2.1 A resistance e t e ol 1 50 µA µA ±10 µA ) s ( ct VGS = ± 20 V; VDS = 0 VGS(th) Unit du 4.5 V 1.28 1.6 Ω Min. Typ. Max. Unit - 890 - pF - 110 - pF 3 o r P 3.6 Table 5. Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 18 - pF Equivalent output capacitance energy related - 28 - pF - 63 - pF - 3.5 - Ω - 35 - nC - 4.5 - nC - 23 - nC Coss(er)(1) O Test conditions ) (s ct u d o r P e Coss(tr)(2) Equivalent output capacitance time related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge let o s b s b O Symbol VDS = 50 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 480 V f = 1 MHz open drain VDD = 496 V, ID = 5.5 A, VGS = 10 V (see Figure 16) 1. It is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. It is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS. 4/18 DocID025167 Rev 1 STDLED625, STULED625 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit - 22 - ns - 12 - ns - 49 - ns - 20 - ns Turn-on delay time td(on) tr VDD = 310 V, ID = 2.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Rise time td(off) Turn-off-delay time tf Fall time Table 7. Source-drain diode Symbol Test conditions Min. Source-drain current ISD ISDM(1) VSD Parameter (2) trr ) s ( ct Typ. - u d o Source-drain current (pulsed) Forward on voltage ISD = 5.5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRR Reverse recovery current )- e t e l Pr ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 18) so b O ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 18) s ( t c - Max. Unit 5.5 A 27 A 1.5 V - 290 ns - 1900 nC - 13.5 A - 335 ns - 2400 nC - 14.5 A Min. Typ. 30 - 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. u d o ete Pr Symbol s b O ol V(BR)GSO Table 8. Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage IGS = ± 1 mA, ID = 0 Max. Unit - V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID025167 Rev 1 5/18 Electrical characteristics STDLED625, STULED625 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK, IPAK Figure 3. Thermal impedance for DPAK, IPAK AM08240v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 n) 100µs D S( o O Li per m at ite io d ni by n m this ax a R rea is 10µs 1 1ms ) s ( ct 10ms 0.1 0.01 0.1 10 1 u d o VDS(V) 100 Figure 4. Output characteristics AM08243v1 ID (A) 10 VGS=10V 7V t(s uc 4 od 2 0 0 ete 5 Pr 10 O 25 VGS VDD=496V ID=4.2A 500 5 4 2 0 0 2 4 6 8 VGS(V) Figure 7. Static drain-source on-resistance AM08246v1 RDS(on) (Ω) VGS=10V 1.38 1.36 10 400 8 300 1.34 1.32 1.30 6 200 4 100 2 1.28 1.26 1.24 0 0 6/18 VDS=15V 3 AM08245v1 VDS 12 AM08244v1 6 5V VDS(V) ol VGS (V) o s b 6V Figure 6. Gate charge vs gate-source voltage bs let 1 20 15 ID (A) 7 O ) 8 6 r P e Figure 5. Transfer characteristics 5 10 15 20 25 0 30 Qg(nC) 1.22 DocID025167 Rev 1 1.0 2.0 3.0 4.0 ID(A) STDLED625, STULED625 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM08247v1 C (pF) AM08248v1 Eoss (µJ) 4 1000 Ciss 3 100 2 Coss 10 1 Crss 1 0.1 1 100 10 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature (norm) 300 400 500 u d o r P e RDS(on) (norm) VDS(V) AM08250v1 t e l o 1.10 2.5 1.00 s b O 2.0 )- 0.90 s ( t c 0.80 0.70 -75 -25 e t e l du o r P 25 75 so VSD (V) 1.5 1.0 0.5 0 -75 TJ(°C) 125 Figure 12. Source-drain diode forward characteristics b O 200 Figure 11. Normalized on-resistance vs temperature AM08249v1 VGS(th) 100 ) s ( ct AM08597v1 -25 25 75 125 TJ(°C) Figure 13. Normalized BVDSS vs temperature AM08596v1 BVDSS (norm) TJ=-50°C 1.0 1.10 0.9 1.05 0.8 TJ=25°C 0.7 1.00 TJ=150°C 0.6 0.95 0.5 0.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ISD(A) 0.90 -75 DocID025167 Rev 1 -25 25 75 125 TJ(°C) 7/18 Electrical characteristics STDLED625, STULED625 Figure 14. Maximum avalanche energy vs starting Tj AM08598v1 EAS (mJ) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 ID=4.2 A VDD=50 V 20 60 40 ) s ( ct u d o 80 100 120 140 TJ(°C) r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 8/18 DocID025167 Rev 1 STDLED625, STULED625 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. VG u d o 47kΩ 1kΩ r P e AM01468v1 A A G FAST DIODE D.U.T. L=100μH S B B 25 Ω c u d D G RG ete t(s 3.3 μF B Figure 18. Unclamped inductive load test circuit )- D 1000 μF s b O VD 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw AM01470v1 l o s AM01471v1 Figure 19. Unclamped inductive waveform b O L VDD o r P S AM01469v1 t e l o Figure 17. Test circuit for inductive load switching and diode recovery times A ) s ( ct 2.7kΩ PW PW D.U.T. Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID025167 Rev 1 10% AM01473v1 9/18 Package mechanical data 4 STDLED625, STULED625 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. 2.20 2.40 A1 0.90 1.10 A2 0.03 b 0.64 b4 5.20 c 0.45 c2 0.48 D 6.00 E 6.40 u d o 0.23 e t e l o s b ) s ( ct E1 e u d o e1 Pr H so b O 10/18 ) s ( ct A D1 e t e l Max. L -O 5.40 0.60 0.60 6.20 6.60 4.70 2.28 4.40 4.60 9.35 10.10 1.00 1.50 2.80 L2 0.80 0.60 1.00 R V2 0.90 5.10 (L1) L4 Pr 0.20 0° 8° DocID025167 Rev 1 STDLED625, STULED625 Package mechanical data Figure 21. DPAK (TO-252) drawings ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 0068772_K DocID025167 Rev 1 11/18 Package mechanical data STDLED625, STULED625 Figure 22. DPAK footprint (a) ) s ( ct u d o r P e t e l o ) (s s b O ct u d o r P e t e l o s b O a. All dimensions are in millimeters. 12/18 DocID025167 Rev 1 Footprint_REV_K STDLED625, STULED625 5 Packaging mechanical data Packaging mechanical data Table 10. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 B1 Min. D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2.1 R 40 T 0.25 W 15.7 t c u ) (s 330 ) s ( ct 13.2 u d o r P e 50 t e l o s b O Max. 18.4 22.4 Base qty. 2500 Bulk qty. 2500 0.35 16.3 d o r P e t e l o s b O DocID025167 Rev 1 13/18 Packaging mechanical data STDLED625, STULED625 Figure 23. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 ) s ( ct User direction of feed u d o r P e let o s b O ) s ( t c u d o Bending radius User direction of feed AM08852v1 Figure 24. Reel for DPAK (TO-252) T r P e REEL DIMENSIONS 40mm min. t e l o s b O R Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 14/18 DocID025167 Rev 1 STDLED625, STULED625 Packaging mechanical data Table 11. IPAK (TO-251) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 ) s ( ct 0.30 c 0.45 c2 0.48 D 6.00 E 6.40 0.60 du e t e ol e 2.28 e1 4.40 H L 9.00 L1 )0.80 L2 s b O s ( t c V1 o r P 0.60 6.20 6.60 4.60 16.10 9.40 1.20 0.80 1.00 10° u d o r P e t e l o s b O DocID025167 Rev 1 15/18 Packaging mechanical data STDLED625, STULED625 Figure 25. IPAK (TO-251) drawings ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 16/18 0068771_K DocID025167 Rev 1 STDLED625, STULED625 6 Revision history Revision history Table 12. Document revision history Date Revision 28-Aug-2013 1 Changes First release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O DocID025167 Rev 1 17/18 STDLED625, STULED625 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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