STULED656

STDLED656, STFILED656, STPLED656, STULED656 N-channel 650 V, 1.1 Ω typ., 6.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes VDS 3 1 RDS(on) max ) s ( ct STDLED656 DPAK 1 2 STFILED656 3 STPLED656 I²PAKFP TAB 70 W 650 V STULED656 TAB 2 3 e t e ol 1 b O o r P s b O • Improved diode reverse recovery characteristics D(2,TAB) l o s 70 W • Very low intrinsic capacitance Figure 1. Internal schematic diagram ete du • Gate charge minimized IPAK )- s ( t c du G(1) 25 W 6.0 A • Extremely high dv/dt capability 2 TO-220 1.3 Ω • 100% avalanche tested 3 1 PTOT ID o r P • Zener-protected Applications • LED lighting applications Description S(3) AM01476v1 These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies. Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STDLED656 I2PAKFP (TO-281) STFILED656 LED656 STPLED656 TO-220 STULED656 IPAK March 2013 DocID024429 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Tube 1/22 www.st.com 22 Contents STDLED656, STFILED656, STPLED656, STULED656 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/22 DocID024429 Rev 1 STDLED656, STFILED656, STPLED656, STULED656 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK, TO-220 IPAK VDS Drain- source voltage 650 VGS Gate- source voltage ±30 V V Drain current (continuous) at TC = 25 °C 6.0 6.0 ID Drain current (continuous) at TC = 100 °C 3.3 3.3(1) IDM PTOT Drain current (pulsed) Total dissipation at TC = 25 °C 30 IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) ESD Gate-source human body model (C=100 pF, R=1.5 kΩ) dv/dt(3) du )- e t e ol 24.0 o r P s b O Peak diode recovery voltage slope VISO Insulation withstand voltage (AC) Tstg Storage temperature TJ Operating junction temperature A ct (1) 24.0 (s) (1) ID (2) Unit I2PAKFP 110 du A W 5.4 A 2.5 kV 12 V/ns 2500 s ( t c A V - 55 to 150 °C 150 °C o r P 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 5.4 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS. e t e ol O bs Table 3. Thermal data Value Symbol Parameter Unit DPAK I²PAKFP TO-220 IPAK Rthj-case Thermal resistance junction-case max. 4.17 - 1.14 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 - 100 °C/W Rthj-pcb Thermal resistance junction-pcb max. DocID024429 Rev 1 50 - °C/W 3/22 Electrical characteristics 2 STDLED656, STFILED656, STPLED656, STULED656 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Drain-source breakdown voltage V(BR)DSS ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) µA 4.5 V 1.1 1.3 Ω Min. Typ. Max. Unit VDS = 100 V, f = 1 MHz, VGS = 0 - 895 67 12.5 - pF pF pF VDS = 0 to 520 V, VGS = 0 - 27 - pF Gate input resistance f=1 MHz open drain - 3.5 - Ω Total gate charge Gate-source charge Gate-drain charge VDD = 500 V, ID = 5.4 A, VGS = 10 V (see Figure 17) - 34 4 21 - nC nC nC e t e ol Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance ) (s t c u d o r P e t e l o bs VGS = 10 V, ID = 2.7 A Dynamic Equivalent Coss eq. (1) capacitance energy related Qg Qgs Qgd V ±9 Static drain-source on resistance Rg Unit 650 ) s ( ct VGS = ± 20 V; VDS=0 RDS(on) Ciss Coss Crss Max. µA µA Gate threshold voltage VDS = VGS, ID = 50 µA Symbol Typ. 0.8 50 VGS(th) Table 5. Min. s b O du 3 o r P 3.6 1. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS O Table 6. Symbol td(on) tr td(off) tf 4/22 Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 325 V, ID = 2.7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) DocID024429 Rev 1 Min. Typ. - 14 10 44 24 Max Unit - ns ns ns ns STDLED656, STFILED656, STPLED656, STULED656 Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Parameter Test conditions Min. Typ. Max Source-drain current Source-drain current (pulsed) Unit - 5.4 21.6 A A 1.5 V Forward on voltage ISD = 5.4 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.4 A, di/dt = 100 A/µs VDD= 60 V (see Figure 21) - 285 5100 14 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.4 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 21) - 330 2500 15.5 ns nC A 1. Pulse width limited by safe operating area ) s ( ct u d o 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% r P e Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter t e l o Test conditions Gate-source breakdown voltage bs IGS= ± 1 mA, ID=0 Min. Typ. 30 - Max. Unit - V O ) The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. s ( t c u d o r P e t e l o s b O DocID024429 Rev 1 5/22 Electrical characteristics 2.1 STDLED656, STFILED656, STPLED656, STULED656 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK, 220 and IPAK TO- Figure 3. Thermal impedance for DPAK, 220 and IPAK TO- AM12961v1 ID (A) Tj=150°C Tc=25°C Single pulse 10µs Op Lim era ite tion d by in th m is ax ar R e DS a (o n) is 10 1 100µs ) s ( ct 1ms u d o 10ms 0.1 0.1 10 1 100 r P e VDS(V) Figure 4. Safe operating area for I²PAKFP ID (A) Tj=150°C Tc=25°C Single pulse 10 0.1 t e l o 0.001 0.1 10 1 t c u 100 s b O 10µs 100µs od r P e 0.01 O ) (s is ea ar (on) s S i D th in ax R ion y m t a er d b Op mite Li 1 bs t e l o Figure 5. Thermal impedance for I²PAKFP AM12960v1 1ms 10ms VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM12962v1 ID (A) VGS=10V 12 AM12963v1 ID (A) VDS=15V 10 10 8 8 6V 6 6 4 4 2 2 0 0 6/22 10 20 VDS(V) DocID024429 Rev 1 0 0 2 4 6 8 VGS(V) STDLED656, STFILED656, STPLED656, STULED656 Figure 8. Gate charge vs gate-source voltage VGS (V) Figure 9. Static drain-source on-resistance AM12964v1 VDS VDD=500V ID=5.4A 12 (V) AM12965v1 RDS(on) (Ω) VGS=10V 1.35 500 1.30 VDS 10 Electrical characteristics 1.25 400 1.20 8 300 1.15 6 1.10 200 1.05 4 1.00 100 2 0 10 0 30 20 0.95 0.90 0 0 Qg(nC) Figure 10. Capacitance variations Eoss (µJ) e t e ol 5 1000 Ciss 100 ) (s s b O Coss ct 10 1 0.1 u d o 1 r P e 100 10 Crss t e l o (norm) s b O AM12968v1 u d o 5 ID(A) AM12967v1 3 2 0 0 100 200 300 400 500 VDS(V) Figure 13. Normalized on-resistance vs temperature AM12969v1 RDS(on) VGS=10V ID=2.7A 2.5 1.00 Pr 4 (norm) ID=50µA VDS=VGS 1.10 4 1 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature VGS(th) 3 2 Figure 11. Output capacitance stored energy AM12966v1 C (pF) 1 ) s ( ct 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 TJ(°C) DocID024429 Rev 1 0 -75 -25 25 75 125 TJ(°C) 7/22 Electrical characteristics STDLED656, STFILED656, STPLED656, STULED656 Figure 14. Normalized BVDSS vs temperature Figure 15. Source-drain diode forward characteristics AM12970v1 BVDSS (norm) ID=1mA AM12971v1 VSD (V) TJ=-50°C 1.0 1.10 TJ=25°C 0.8 1.05 TJ=150°C 0.6 1.00 0.4 0.95 0 0.90 -75 25 -25 75 125 0 TJ(°C) 1 2 Figure 16. Maximum avalanche energy vs temperature e t e ol AM12972v1 EAS (mJ) ID=5.4 A VDD=50 V 100 80 ) (s 60 s b O t c u 40 d o r 20 P e 0 0 t e l o 20 40 60 80 100 120 TJ(°C) s b O 8/22 ) s ( ct 0.2 DocID024429 Rev 1 3 du 4 o r P 5 6 ISD(A) STDLED656, STFILED656, STPLED656, STULED656 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. VG c u d 47kΩ 1kΩ AM01468v1 e t e ol Figure 19. Test circuit for inductive load switching and diode recovery times A A G D.U.T. FAST DIODE B B S s ( t c 3.3 μF B 25 Ω D 1000 μF s b O RG S r P e 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw let AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform b O AM01469v1 L VD VDD u d o G so )- L=100μH o r P Figure 20. Unclamped inductive load test circuit A D ) s ( t 2.7kΩ PW PW D.U.T. Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024429 Rev 1 10% AM01473v1 9/22 Package mechanical data 4 STDLED656, STFILED656, STPLED656, STULED656 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 10/22 DocID024429 Rev 1 STDLED656, STFILED656, STPLED656, STULED656 Package mechanical data Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 ) s ( ct 6.20 D1 5.10 E 6.40 e t e ol E1 4.70 e o r P 6.60 2.28 e1 4.40 H 9.35 L 1.00 (L1) )- s b O s ( t c L2 du L4 ro R P e V2 du 4.60 10.10 1.50 2.80 0.80 0.60 1.00 0.20 0° 8° t e l o s b O DocID024429 Rev 1 11/22 Package mechanical data STDLED656, STFILED656, STPLED656, STULED656 Figure 23. DPAK (TO-252) drawing ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 0068772_K 12/22 DocID024429 Rev 1 STDLED656, STFILED656, STPLED656, STULED656 Package mechanical data Figure 24. DPAK footprint (a) ) s ( ct u d o r P e t e l o ) (s s b O t c u Footprint_REV_K d o r P e t e l o s b O a. All dimensions are in millimeters DocID024429 Rev 1 13/22 Package mechanical data STDLED656, STFILED656, STPLED656, STULED656 Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 ) s ( ct F1 1.20 G 4.95 H 10.00 L1 21.00 L2 13.20 L3 10.55 L4 2.70 L5 0.85 L6 7.30 du 5.20 - ete o r P ol )- s b O 10.40 23.00 14.10 10.85 3.20 1.25 7.50 s ( t c Figure 25. I2PAKFP (TO-281) drawing u d o r P e t e l o s b O UHY$ 14/22 DocID024429 Rev 1 STDLED656, STFILED656, STPLED656, STULED656 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 ) s ( ct 1.27 E 10 e 2.40 e1 4.95 F 1.23 H1 6.20 J1 2.40 L 13 L1 3.50 10.40 du 2.70 L30 )- 3.75 du Q s b O s ( t c ∅P ete ol L20 e t e ol Max. 2.65 o r P 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 o r P s b O DocID024429 Rev 1 15/22 Package mechanical data STDLED656, STFILED656, STPLED656, STULED656 Figure 26. TO-220 type A drawing ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r 0015988_typeA_Rev_S P e t e l o s b O 16/22 DocID024429 Rev 1 STDLED656, STFILED656, STPLED656, STULED656 Package mechanical data Table 12. IPAK (TO-251) mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 ) s ( ct 0.30 c 0.45 c2 0.48 D 6.00 E 6.40 0.60 du e t e ol e 2.28 e1 4.40 H L 9.00 L1 )0.80 L2 s b O s ( t c V1 o r P 0.60 6.20 6.60 4.60 16.10 9.40 1.20 0.80 1.00 10° u d o r P e t e l o s b O DocID024429 Rev 1 17/22 Package mechanical data STDLED656, STFILED656, STPLED656, STULED656 Figure 27. IPAK (TO-251) drawing ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 18/22 0068771_K DocID024429 Rev 1 STDLED656, STFILED656, STPLED656, STULED656 5 Packaging mechanical data Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 B1 Min. D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2.1 R 40 T 0.25 W 15.7 t c u ) (s 330 ) s ( ct 13.2 u d o r P e 50 t e l o s b O Max. 18.4 22.4 Base qty. 2500 Bulk qty. 2500 0.35 16.3 d o r P e t e l o s b O DocID024429 Rev 1 19/22 Packaging mechanical data STDLED656, STFILED656, STPLED656, STULED656 Figure 28. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 ) s ( ct User direction of feed u d o r P e let o s b O ) s ( t c u d o Bending radius User direction of feed AM08852v1 Figure 29. Reel for DPAK (TO-252) T r P e REEL DIMENSIONS 40mm min. t e l o s b O R Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 DocID024429 Rev 1 STDLED656, STFILED656, STPLED656, STULED656 6 Revision history Revision history Table 14. Document revision history Date Revision 26-Mar-2013 1 Changes First release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O DocID024429 Rev 1 21/22 STDLED656, STFILED656, STPLED656, STULED656 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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