STV240N75F3

STV240N75F3 N-channel 75 V, 2.3 mΩ, 240 A PowerSO-10 STripFET™ III Power MOSFET Features Type STV240N75F3 ■ ■ VDSS 75 V RDS(on) max < 2.6 mΩ ID 240 A 10 Conduction losses reduced Low profile, very low parasitic inductance 1 PowerSO-10 Application ■ Switching applications Figure 1. Internal schematic diagram and connection diagram (top view) Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Table 1. Device summary Order code Marking 240N75F3 Package PowerSO-10 Packaging Tape and reel STV240N75F3 January 2010 Doc ID 14595 Rev 2 1/15 www.st.com 15 Contents STV240N75F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 Tape and reel for PowerSO-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 14595 Rev 2 STV240N75F3 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 75 ± 20 240 170 960 300 2.0 600 -55 to 175 Operating junction temperature °C Unit V V A A A W W/°C mJ °C EAS (3) Tstg Tj Single pulse avalanche energy Storage temperature 1. Pulse width limited by safe operating area 2. This value is rated according to Rthj-c 3. Starting Tj = 25 °C, ID = 60 A, VDD = 15 V Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-pcb max Value 0.5 35 Unit °C/W °C/W 1. When mounted on 1 inch² FR-4 2 oz Cu. Doc ID 14595 Rev 2 3/15 Electrical characteristics STV240N75F3 2 Electrical characteristics (TCASE =25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS= 0 Min. 75 10 100 ±200 2 2.3 4 2.6 Typ. Max. Unit V µA µA nA V mΩ VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC = 125 °C Gate body leakage current (VDS = 0) VDS = ± 20 V Gate threshold voltage VDS= VGS, ID = 250 µA Static drain-source on resistance VGS= 10 V, ID= 120 A Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 6800 1100 50 85 30 26 Max. Unit pF pF pF nC nC nC VDS = 25 V, f = 1 MHz, VGS =0 - - VDD= 37.5 V, ID= 120 A, VGS= 10 V (see Figure 14) - - 4/15 Doc ID 14595 Rev 2 STV240N75F3 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 37.5 V, ID = 60 A RG= 4.7 Ω, VGS= 10 V, (see Figure 13) VDD = 37.5 V, ID = 60 A RG= 4.7 Ω, VGS= 10 V, (see Figure 13) Min. Typ. 25 70 100 15 Max Unit ns ns ns ns - - - - Table 7. Symbol ISD ISD (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, VGS = 0 ISD = 120 A, di/dt = 100 A/µs VDD = 20 V, Tj = 150 °C (see Figure 18) Test conditions Min. 80 180 4.5 Typ. Max. Unit 240 960 1.5 A A V ns nC A VSD (2) trr Qrr IRRM 2. 1. Pulse width limited by safe operating area Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 14595 Rev 2 5/15 Electrical characteristics STV240N75F3 2.1 Figure 2. ID (A) 1000 Electrical characteristics (curves) Safe operating area AM05544v1 Figure 3. K Thermal impedance Zth_PowerSO-10 δ=0.5 0.2 0.1 100 is rea s a (on) thi RDS in x ion ma y rat pe ed b O it Lim 10 100µs -1 0.05 0.02 0.01 10 Tj=175°C Tc=25°C Single pulse 1 10 VDS(V) 10 -5 10 -3 1ms 10ms 10 -2 1 0.1 0.1 Single pulse 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 4. ID (A) 350 300 250 200 150 100 Output characteristics AM05545v1 Figure 5. Transfer characteristics VGS=10V 6V 5V 50 0 0 1 2 3 VDS(V) Figure 6. Normalized BVDSS vs temperature Figure 7. RDS(on) (mΩ) 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 0 Static drain-source on resistance AM05546v1 50 100 150 200 ID(A) 6/15 Doc ID 14595 Rev 2 STV240N75F3 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 14595 Rev 2 7/15 Test circuits STV240N75F3 3 Test circuits Figure 14. Gate charge test circuit VDD 12V 2200 Figure 13. Switching times test circuit for resistive load 47kΩ 100nF 1kΩ RL VGS VD RG PW D.U.T. µF 3.3 µF VDD Vi=20V=VGMAX 2200 µF IG=CONST 2.7kΩ 47kΩ PW 1kΩ 100Ω D.U.T. VG AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 Ω D.U.T. A FAST DIODE B A L=100µH B D G 3.3 µF 1000 µF L VD 2200 µF 3.3 µF VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform V(BR)DSS VD Figure 18. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/15 Doc ID 14595 Rev 2 STV240N75F3 Figure 19. Gate charge test waveform Test circuits Figure 20. Diode recovery times waveform SC15260 SC15250 Doc ID 14595 Rev 2 9/15 Package mechanical data STV240N75F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 14595 Rev 2 STV240N75F3 Package mechanical data PowerSO-10 MECHANICAL DATA DIM. MIN. A A1 B C D D1 e E E1 E2 E3 E4 F h H L q α 0o 13.80 1.20 1.70 8o 9.30 7.20 7.20 6.10 5.90 1.25 0.50 14.40 1.80 0.543 0.047 0.067 3.35 0.00 0.40 0.35 9.40 7.40 1.27 9.50 7.40 7.60 6.35 6.10 1.35 0.366 0.283 0.283 0.240 0.232 0.049 0.002 0.567 0.071 mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.050 0.374 0.291 0.300 0.250 0.240 0.053 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 B 0.10 A B 10 = = 6 = = H = E = = E2 E3 E1 = E4 = = A 1 5 = SEATING PLANE DETAIL "A" Q e 0.25 M B C h D = D1 = = = SEATING PLANE A F A1 = A1 L DETAIL "A" α 0068039-C Doc ID 14595 Rev 2 11/15 Packaging information STV240N75F3 5 5.1 Packaging information Tape and reel for PowerSO-10 Table 8. Ref. Min. A0 B0 K0 F E W P2 P0 P1 T D(Ø) 14.9 9.9 4.15 11.4 1.65 23.7 1.9 3.9 23.9 0.025 1.50 Typ. 15.0 10.0 4.25 11.5 1.75 24.0 2.0 4.0 24.0 0.30 1.55 Max. 15.1 10.1 4.35 11.6 1.85 24.3 2.1 4.1 24.1 0.35 1.60 Carrier tape dimensions mm Note: 10 sprocket hole pitch cumulative tolerance ±0.2 mm. Figure 21. Carrier tape drawing (a) 12/15 Doc ID 14595 Rev 2 STV240N75F3 Packaging information Table 9. Ref. Reel dimensions mm Min. Typ. Max. 330 1.5 12.8 20.2 60 24.4 30.4 13 13.2 A B C D N G T Note: 10 sprocket hole pitch cumulative tolerance ±0.2 mm. Figure 22. Reel drawing (b) Table 10. Base and bulk quantities Base qty. 600 Bulk qty. a. Drawing is not to scale. b. Drawing is not to scale. Doc ID 14595 Rev 2 13/15 Revision history STV240N75F3 6 Revision history Table 11. Date 02-Apr-2008 21-Jan-2010 Document revision history Revision 1 2 Initial release – Document status promoted from preliminary data to datasheet. – Inserted new Section 5: Packaging information. Changes 14/15 Doc ID 14595 Rev 2 STV240N75F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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