STV270N4F3

STV270N4F3 N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID (1) STV270N4F3 40 V < 1.5 mΩ 270 A 10 1. Current limited by package 1 PowerSO-10 ■ Conduction losses reduced ■ Low profile, very low parasitic inductance Applications ■ Switching application Figure 1. Description Internal schematic diagram and connection diagram (top view) This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances. Table 1. Device summary Order code Marking Package Packaging STV270N4F3 270N4F3 PowerSO-10 Tape and reel June 2009 Doc ID 14089 Rev 6 1/12 www.st.com 12 Contents STV270N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics .................................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 14089 Rev 6 STV270N4F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V VDS Drain-source voltage (vGS = 0) VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 270 A Drain current (continuous) at TC = 100 °C 220 A Drain current (pulsed) 1080 A Total dissipation at TC = 25 °C 300 W 2 W/°C 1000 mJ -55 to 175 °C Value Unit Thermal resistance junction-case max 0.5 °C/W Thermal resistance junction-pcb max 35 °C/W ID (1) ID IDM (1) PTOT (2) Derating factor EAS (3) Tstg Single pulse avalanche energy Storage temperature Operating junction temperature Tj 1. Current limited by package 2. This value is rated according to Rthj-c 3. Starting Tj = 25 °C, ID = 80 A, VDD = 32 V Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal data Parameter 1. When mounted on 1 inch2 FR-4 2 oz Cu. Doc ID 14089 Rev 6 3/12 Electrical characteristics 2 STV270N4F3 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 Min. Typ. Max. 40 Unit V VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc=125 °C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) ±200 nA 4 V 1.25 1.5 mΩ Min. Typ. Max. Unit VDS = ± 20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance Symbol 4/12 Parameter IDSS Table 5. 1. On /off states 2 VGS= 10 V, ID= 80 A Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 10 V, ID= 100 A - 200 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS =0 - 7500 1900 50 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 20 V, ID= 160 A, VGS= 10 V Figure 14 - 110 30 25 150 nC nC nC Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 20 V, ID = 80 A RG= 4.7 Ω, VGS= 10 V Figure 13 - 25 180 - ns ns td(off) tf Turn-off delay time Fall time VDD = 20 V, ID = 80 A RG= 4.7 Ω, VGS= 10 V, Figure 13 - 110 45 - ns ns Doc ID 14089 Rev 6 STV270N4F3 Electrical characteristics Table 7. Source drain diode Symbol Parameter ISD ISD (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 270 1080 A A ISD = 80 A, VGS = 0 - 1.3 V ISD = 160 A,di/dt = 100 A/µs VDD = 32 V, Tj = 150 °C Figure 15 - 70 225 3.2 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 14089 Rev 6 5/12 Electrical characteristics STV270N4F3 2.1 Electrical characteristics Figure 2. Safe operating area Thermal impedance Figure 5. Transfer characteristics AM01500v1 ID (A) Tj=175°C Tc=25°C Single pulse a is are n) his ds(o t n ni xR tio Ma era d by p O ite lim 3 10 102 10 Figure 3. 100µs 1ms 10ms 1 10 0 10-1 10-1 Figure 4. 10 0 10 1 VDS(V) Output characteristics AM01502v1 ID(A) 450 AM01503v1 ID(A) 450 VGS=10V 400 350 350 300 300 250 250 200 200 150 150 100 0 Figure 6. 2 6 4 50 0 VDS(V) Static drain-source on resistance Figure 7. AM01501v1 RDS(on) (mΩ) VGS ≥10V TC=25°C 1.40 1.30 1.20 1.10 1.00 0 6/12 TC=25°C 100 4V 50 0 VDS=5V 400 5V 20 40 60 80 ID(A) Doc ID 14089 Rev 6 0 2 4 6 8 VGS(V) Normalized BVDSS vs temperature STV270N4F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics AM04229v1 VSD (V) 0.95 0.90 0.85 0.80 TJ=-50°C TJ=25°C 0.75 0.70 0.65 TJ=175°C 0.60 0.55 0.50 0.45 0.40 0 20 40 60 80 100 120 140 160 180 ISD(A) Doc ID 14089 Rev 6 7/12 Test circuits 3 STV270N4F3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 14089 Rev 6 10% AM01473v1 STV270N4F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 14089 Rev 6 9/12 Package mechanical data STV270N4F3 PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 C 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 e 1.27 0.144 0.300 0.050 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 F 1.25 1.35 0.049 0.053 h 0.50 0.002 H 13.80 14.40 0.543 L 1.20 1.80 0.047 q 1.70 0.071 0.067 0o α 0.567 8o B 0.10 A B 10 = = E4 = = E1 = E3 = E2 = E = = = H 6 = = 1 5 B e 0.25 SEATING PLANE DETAIL "A" A C M Q h D = D1 = = = SEATING PLANE A F A1 A1 L DETAIL "A" α 0068039-C 10/12 Doc ID 14089 Rev 6 STV270N4F3 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 25-Oct-2007 1 Initial release 03-Apr-2008 2 ID value has been updated. 01-Oct-2008 3 Document status promoted from preliminary data to datasheet 09-Mar-2009 4 Rthj-pcb value has been changed in Table 3: Thermal data. 05-May-2009 5 Changed: Description and Figure 12: Source-drain diode forward characteristics 17-Jun-2009 6 Corrected typing error on cover page Doc ID 14089 Rev 6 11/12 STV270N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 14089 Rev 6