STV300NH02L

STV300NH02L N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET™ Power MOSFET PRELIMINARY DATA General features Type STV300NH02L ■ ■ ■ ■ VDSS 24V RDS(on) 0.001Ω ID 280A 10 1 RDS(on)*Qg industry’s benchmark Conduction losses reduced Low profile, very low parasitic inductance Switching losses reduced PowerSO-10 Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for high current OR-ing application. Internal schematic diagram Applications ■ Switching application – OR-ing – Specially designed and optimized for high efficiency DC/DC converters. Connection diagram (top view) Order code Part number STV300NH02L Marking V300NH02L Package PowerSO-10 Packaging Tape & reel February 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STV300NH02L 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) ID (1) IDM (2) PTOT (3) Absolute maximum ratings Parameter Drain-source voltage (vgs = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 24 ± 20 280 200 1120 300 2 2296 -55 to 175 Operating junction temperature Unit V V A A A W W/°C mJ °C EAS (4) Tstg Tj Single pulse avalanche energy Storage temperature 1. This value is limited by package 2. Pulse with limited by safe operating area 3. This value is rated according to Rthj-c 4. Starting Tj = 25°C, ID = 60A, VDD = 20V Table 2. Thermal data 0.5 50 °C/W °C/W Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 2/9 STV300NH02L Electrical characteristics 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min. 24 1 10 ±100 1 1.5 0.8 1.1 2 1 Typ. Max. Unit V µA µA nA V mΩ mΩ VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc=125°C Gate body leakage current (VDS = 0) VDS = ± 20V Gate threshold voltage VDS= VGS, ID = 250µA Static drain-source on resistance Static drain-source on resistance VGS= 10V, ID= 80A VGS= 10V, ID= 80A @100°C Table 4. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. Typ. 7055 3251 307 109.4 30.2 26.4 4.4 Max. Unit pF pF pF nC nC nC Ω VDS = 15V, f = 1 MHz, VGS =0 VDD= 12V, ID= 120A, VGS= 10V (see Figure 2) VDS = 0V, f = 1 MHz, VGS =0 3/9 Electrical characteristics STV300NH02L Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD = 12V, ID = 60A , RG= 4.7Ω VGS= 10V, (see Figure 1) VDD = 12V, ID = 60A , RG= 4.7Ω VGS= 10V, (see Figure 1) Min. Typ. 18 275 Max Unit ns ns Turn-off delay time Fall time 138 94.4 ns ns Table 6. Symbol ISD ISDM VSD (1) trr Qrr IRRM trr Qrr IRRM 1. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120A, VGS = 0 ISD = 120A,di/dt = 100A/µs VDD = 20V, Tj = 25°C (see Figure 6) ISD = 120A,di/dt = 100A/µs VDD = 20V, Tj = 150°C (see Figure 6) 63 85 2.7 63.2 88 2.8 Test conditions Min. Typ. Max. Unit 300 1200 1.3 A A V ns nC A ns nC A Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 4/9 STV300NH02L Test circuits 3 Figure 1. Test circuits Switching times test circuit for resistive load Figure 2. Gate charge test circuit Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped inductive load test circuit Figure 5. Unclamped inductive waveform Figure 6. Switching time waveform 5/9 Package mechanical data STV300NH02L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STV300NH02L Package mechanical data PowerSO-10 MECHANICAL DATA DIM. MIN. A A1 B C D D1 e E E1 E2 E3 E4 F h H L q α 0o 13.80 1.20 1.70 8o 9.30 7.20 7.20 6.10 5.90 1.25 0.50 14.40 1.80 0.543 0.047 0.067 3.35 0.00 0.40 0.35 9.40 7.40 1.27 9.50 7.40 7.60 6.35 6.10 1.35 0.366 0.283 0.283 0.240 0.232 0.049 0.002 0.567 0.071 mm TYP. MAX. 3.65 0.10 0.60 0.55 9.60 7.60 MIN. 0.132 0.000 0.016 0.013 0.370 0.291 0.050 0.374 0.291 0.300 0.250 0.240 0.053 inch TYP. MAX. 0.144 0.004 0.024 0.022 0.378 0.300 B 0.10 A B 10 = = 6 = = H = E = = E2 E3 E1 = E4 = = A 1 5 = SEATING PLANE DETAIL "A" Q e 0.25 M B C h D = D1 = = = SEATING PLANE A F A1 = A1 L DETAIL "A" α 0068039-C 7/9 Revision history STV300NH02L 5 Revision history Table 7. Date 08-Feb-2007 Revision history Revision 1 First release Changes 8/9 STV300NH02L Please Read Carefully: Information in this document is provided solely in connection with ST products. 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