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STV9378

STV9378

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    STV9378 - VERTICAL DEFLECTION BOOSTER - STMicroelectronics

  • 数据手册
  • 价格&库存
STV9378 数据手册
STV9378 VERTICAL DEFLECTION BOOSTER . . . . . . ADVANCE DATA POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION OUTPUT CURRENT UP TO 2.0APP FLYBACK VOLTAGE UP TO 90V (on Pin 5) INTERNAL REFERENCE VOLTAGE HEPTAWATT (Plastic Package) DESCRIPTION Designed for monitors and high performance TVs, the STV9378 vertical deflection booster delivers flyback voltages up to 90V. The STV9378 operateswith supplies up to 42V and provides up to 2App output current to drive the yoke. The STV9378 is offered in HEPTAWATT package. PIN CONNECTIONS ORDER CODE : STV9378 7 6 5 4 3 2 1 Non-inverting Input and Reference Voltage Output Stage Supply Output GND Flyback Generator Supply Voltage Inverting Input Tab connected to pin 4 9378-01.EPS July 1994 This is advance information on a new product now in development or undergoing evaluation. Details are subject to change without no tice. 1/5 STV9378 BLOCK DIAGRAM OUTPUT SUPPLY STAGE VOLTAGE SUPPLY 2 6 FLYBACK GENERATOR 3 FLYBACK GENERATOR REFERENCE VOLTAGE 10kΩ INVERTING INPUT 1 POWER AMPLIFIER THER MAL PROTECTION 5 OUTPUT NON-INVERTING INPUT 7 OR REFERENCE VOLTAGE STV9378 4 GROUND ABSOLUTE MAXIMUM RATINGS Symbol VS V6 V1 , V7 IO I3 I3 Toper Tstg Tj Notes : 1. 2. 3. Parameter Supply Voltage (Pin 2) (see note 1) Flyback Peak Voltage (Pin 6) (see note 1) Amplifier Input Voltage (Pins 1-7) (see note 1) Maximum Output Peak Current (see notes 2 and 3) Maximum Sink Current (first part of flyback) (t < 1ms) Maximum Source Current (t < 1ms) Operating Ambient Temperature Storage Temperature Junction Temperature Versus GND. The output current can reach 4A peak for t ≤ 10µs (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). Value 50 100 - 0.3, + VS 1.5 1.5 1.5 - 20, + 75 - 40, + 150 +150 Unit V V V A A A o o o C C THERMAL DATA Symbol Rth (j-c) Tt ∆Tt Tjr Parameter Junction-case Thermal Resistance Temperature for Thermal Shutdown Hysteresis on Tt Recommended Max. Junction Temperature Max. Value 3 150 10 120 Unit o C/W o o o C C 2/5 9378-02.TBL C 9378-01.TBL C 9378-02.EPS STV9378 ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified) Symbol VS I2 I6 IO I1 V7 ∆V7 ∆ VS Kt GV V5L V5H VD5 - 6 VD3 - 2 V3L V3SH Parameter Operating Supply Voltage Range Pin 2 Quiescent Current Pin 6 Quiescent Current Max. Peak Output Current Amplifier Bias Current Internal Reference Voltage Reference Voltage Drift versus VS Reference Voltage Drift versus Tj Voltage Gain Output Saturation Voltage to GND (Pin 4) Output Saturation Voltage to Supply (Pin 6) Diode Forward Voltage between Pins 5-6 Diode Forward Voltage between Pins 3-2 Saturation Voltage on Pin 3 Saturation Voltage to Pin 2 (2nd part of flyback) I5 = 1A I5 = - 1A I5 = 1A I3 = 1A I3 = 20mA I3 = - 1A 80 1 1.6 1.5 1.5 0.8 2.1 1.5 2.1 2 2 1.2 2.9 VS = 24 to 42V V1 = 1V 2.2 - 0.15 2.3 2 100 I3 = 0, I5 = 0 I3 = 0, I5 = 0 5 Test Conditions Min. 10 10 10 Typ. Max. 42 20 30 1 -1 2.4 4 150 Unit V mA mA A µA V mV/V ppm/oC dB V V V V V V 9378-03.TBL APPLICATION CIRCUIT + VS CF 2 6 3 REFERENCE VOLTAGE 10kΩ FLYBACK GENERATOR R5 1 POWER AMPLIFIER 5 10µF STV9378 4 THERMAL PROTECTION R3 R4 0.22µF 1.5Ω R2 R1 9378-03.EPS 330Ω CL 7 YOKE 3/5 STV9378 Figure 1 : Output Transistors SOA (for secondary breakdown) I C (A) @ T case = 25°C Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current) ISB (%) 100 90 10 1 80 10 -1 t = 1ms t = 10ms t = 100ms 1 10 70 9378-04.EPS 10 -2 10 2 60 25 50 75 100 125 4/5 9378-05.EPS V CE (V) T case (°C) STV9378 PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWAT L E L1 M1 A C D1 L2 L5 L3 G1 H3 Dia. PM-HEPTV.EPS F L6 Dimensions Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Millimeters Typ. H2 L7 F1 G2 G M D 2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. Inches Typ. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 3 15.8 6.6 0.102 0.594 0.236 0.110 0.200 0.118 0.622 0.260 HEPTV.TBL 3.85 0.144 0.152 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 2 5/5
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