STW11NK100Z

STW11NK100Z STW11NK100Z N-channel 1000V - 1.1Ω - 8.3A - TO-247 Zener - Protected SuperMESH™ PowerMOSFET General features Type STW11NK100Z ■ ■ ■ ■ ■ VDSS (@Tjmax) 1000 V RDS(on) ID Pw < 1.38 Ω 8.3 A 230W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number STW11NK100Z Marking W11NK100Z Package TO-247 Packaging Tube July 2006 Rev 2 1/14 www.st.com 14 Contents STW11NK100Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW11NK100Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM(1) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1,5KΩ) Peak diode recovery voltage slope Operating junction temperature Storage temperature Value 1000 1000 ± 30 8.3 5.2 33.2 230 1.85 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C VESD (G-S) dv/dt TJ Tstg (2) 1. Pulse width limited by safe operating area 2. ISD ≤8.3 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.54 50 300 Unit °C/W °C/W °C Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 8.3 550 Unit A mJ 3/14 Electrical ratings STW11NK100Z Table 4. Symbol BVGSO Gate-source zener diode Parameter Test conditions Min. 30 Typ. Max. 0 Unit V Gate-source breakdown voltage Igs=± 1mA (Open Drain) Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 STW11NK100Z Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125°C Min. 1000 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = ± 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100µA VGS = 10V, ID = 4.15 A 3 3.75 1.1 4.5 1.38 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Test conditions Min. Typ. 9 3500 270 60 170 27 18 98 55 113 18 60 162 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward transconductance VDS =15V, ID = 4.15A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 500V VDD=800 V, ID= 8A, RG=4.7Ω, VGS=10V (see Figure 16) VDD=800V, ID = 8A VGS =10V 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/14 Electrical characteristics STW11NK100Z Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=8.3A, VGS=0 ISD=8.3, di/dt = 100A/µs, VDD=80V, Tj=25°C (see Figure 18) ISD=8A, di/dt = 100A/µs, VDD=80V, Tj=150°C (see Figure 18) 560 4.48 16 620 4.57 16 Test conditions Min Typ. Max 8.3 33.2 1.6 Unit A A V ns µC A ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 6/14 STW11NK100Z Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 7/14 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. STW11NK100Z Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 8/14 STW11NK100Z Figure 13. Maximum avalanche energy vs temperature Electrical characteristics 9/14 Test circuit Package mechanical data STW11NK100Z 3 Test circuit Package mechanical data Figure 15. Unclamped Inductive waveform Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load switching and diode recovery times 10/14 STW11NK100Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STW11NK100Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 12/14 STW11NK100Z Revision history 5 Revision history Table 8. Date 21-Jun-2004 31-Jul-2006 Revision history Revision 1 2 Preliminary version New template, no content change. 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