STB120NF10T4, STP120NF10,
STW120NF10
N-channel 100 V, 9.0 mΩ typ., 110 A STripFET™ II
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
TAB
Order code
VDS
RDS(on) max.
ID
100 V
10.5 mΩ
110 A
STB120NF10T4
STP120NF10
D2PAK
TAB
STW120NF10
TO-220
1
2
3
3
2
TO-247
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
1
Applications
Figure 1: Internal schematic diagram
Switching applications
Description
D(2, TAB)
These Power MOSFETs have been developed
using STMicroelectronics’ unique STripFET
process, which is specifically designed to
minimize input capacitance and gate charge.
This renders the devices suitable for use as
primary switch in advanced high-efficiency
isolated DC-DC converters for telecom and
computer applications, and applications with low
gate charge driving requirements.
G(1)
S(3)
AM01475v1_noZen
Table 1: Device summary
Order code
Marking
Package
Packing
STB120NF10T4
B120NF10
D2PAK
Tape and reel
STP120NF10
P120NF10
TO-220
STW120NF10
120NF10
TO-247
November 2017
DocID9522 Rev 8
This is information on a product in full production.
Tube
1/19
www.st.com
Contents
STB120NF10T4, STP120NF10, STW120NF10
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
5
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4.1
D²PAK (TO-263) type A2 package information ................................. 9
4.2
D²PAK packing information ............................................................. 12
4.3
TO-220 package information ........................................................... 14
4.4
TO-247 package information ........................................................... 16
Revision history ............................................................................ 18
DocID9522 Rev 8
STB120NF10T4, STP120NF10, STW120NF10
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
100
V
VGS
Gate-source voltage
±20
V
Drain current (continuous) at TC = 25 °C
110
A
ID
Drain current (continuous) at TC = 100 °C
77
A
IDM(1)
Drain current (pulsed)
440
A
PTOT
Total dissipation at TC = 25 °C
312
W
Peak diode recovery voltage slope
10
V/ns
Single pulse avalanche energy
550
mJ
-55 to 175
°C
dv/dt(2)
EAS(3)
Tj
Operating junction temperature range
Tstg
Storage temperature range
Notes:
(1)Pulse
(2)I
SD
width is limited by safe operating area.
≤ 110 A, di/dt ≤ 300 A/μs, VDD = 80% V(BR)DSS
(3)Starting
Tj =25 °C, ID = 60 A, VDD = 50 V
Table 3: Thermal data
Value
Symbol
Parameter
TO-220
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb
Thermal resistance
junction-pcb(1)
TO-247
D2PAK
0.48
Unit
°C/W
62.5
°C/W
35
°C/W
Notes:
(1)When
mounted on an 1-inch2 FR-4, 2 Oz copper board.
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Electrical characteristics
2
STB120NF10T4, STP120NF10, STW120NF10
Electrical characteristics
(T CASE= 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
V(BR)DSS
Parameter
Drain-source breakdown
voltage
Test conditions
Min.
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
V
VGS = 0 V, VDS = 100 V
1
µA
VGS = 0 V, VDS= 100 V,
Tc = 125 °C(1)
10
µA
Gate-source leakage current
VDS = 0 V, VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 60 A
9.0
10.5
mΩ
Typ.
Max.
Unit
IDSS
Zero gate voltage drain
current
IGSS
2
Notes:
(1)Defined
by design, not subject to production test.
Table 5: Dynamic
Symbol
Ciss
Parameter
Test conditions
Min.
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS= 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
-
5200
pF
785
pF
325
VDD = 80 V, ID= 120 A,
VGS = 0 to 10 V
(see Figure 14: "Test
circuit for gate charge
behavior" )
172
-
pF
233(1)
nC
32
nC
64
nC
Notes:
(1)Defined
by design, not subject to production test.
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
4/19
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
Unit
VDD = 50 V, ID = 60 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit
for resistive load switching
times" and Figure 18:
"Switching time waveform")
-
25
-
ns
-
90
-
ns
-
132
-
ns
-
68
-
ns
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STB120NF10T4, STP120NF10, STW120NF10
Electrical characteristics
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source drain current
-
110
A
ISDM(1)
Source-drain current
(pulsed)
-
440
A
VSD(2)
Forward on voltage
ISD = 120 A, VGS= 0 V
-
1.3
V
trr
Reverse recovery time
-
152
ns
Qrr
Reverse recovery charge
-
760
nC
IRRM
Reverse recovery current
ISD = 120 A, di/dt = 100 A/µs,
VDD = 40 V, Tj = 150 °C
(see Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
10
A
Notes:
(1)Pulse
width is limited by safe operating area.
(2)Pulsed:
pulse duration = 300 µs, duty cycle 1.5%
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Electrical characteristics
2.1
6/19
STB120NF10T4, STP120NF10, STW120NF10
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Normalized V(BR)DSS vs temperature
Figure 7: Static drain-source on-resistance
DocID9522 Rev 8
STB120NF10T4, STP120NF10, STW120NF10
Electrical characteristics
Figure 8: Gate charge vs gate-source voltage
Figure 9: Capacitance variations
Figure 10: Normalized gate threshold voltage vs
temperature
Figure 11: Normalized on-resistance vs
temperature
Figure 12: Source-drain diode forward characteristics
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Test circuits
3
8/19
STB120NF10T4, STP120NF10, STW120NF10
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
DocID9522 Rev 8
STB120NF10T4, STP120NF10, STW120NF10
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
D²PAK (TO-263) type A2 package information
Figure 19: D²PAK (TO-263) type A2 package outline
DocID9522 Rev 8
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Package information
STB120NF10T4, STP120NF10, STW120NF10
Table 8: D²PAK (TO-263) type A2 package mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.70
8.90
9.10
E2
7.30
7.50
7.70
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/19
Typ.
0.40
0°
DocID9522 Rev 8
8°
STB120NF10T4, STP120NF10, STW120NF10
Package information
Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID9522 Rev 8
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Package information
4.2
STB120NF10T4, STP120NF10, STW120NF10
D²PAK packing information
Figure 21: D²PAK tape outline
12/19
DocID9522 Rev 8
STB120NF10T4, STP120NF10, STW120NF10
Package information
Figure 22: D²PAK reel outline
Table 9: D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID9522 Rev 8
Min.
Max.
330
13.2
26.4
30.4
13/19
Package information
4.3
STB120NF10T4, STP120NF10, STW120NF10
TO-220 package information
Figure 23: TO-220 type A package outline
14/19
DocID9522 Rev 8
STB120NF10T4, STP120NF10, STW120NF10
Package information
Table 10: TO-220 type A package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
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Package information
4.4
STB120NF10T4, STP120NF10, STW120NF10
TO-247 package information
Figure 24: TO-247 package outline
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STB120NF10T4, STP120NF10, STW120NF10
Package information
Table 11: TO-247 package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
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5.50
5.50
5.70
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Revision history
5
STB120NF10T4, STP120NF10, STW120NF10
Revision history
Table 12: Document revision history
Date
Revision
20-Mar-2006
2
Preliminary datasheet
31-Mar-2006
3
Typing error
19-Jun-2006
4
New template, no content change
28-Jun-2006
5
New ID value on Table 2
05-Oct-2006
6
New value on Table 7
11-May-2011
7
Added new package and mechanical data: TO-220FP
8
Part number STF120NF10 has been moved to a separate datasheet.
Updated features, description and device summary on cover page.
Updated Table 2: "Absolute maximum ratings", Table 3: "Thermal
data" and Table 4: "On/off states".
Updated Section 4: "Package information".
Minor text changes
03-Nov-2017
18/19
Changes
DocID9522 Rev 8
STB120NF10T4, STP120NF10, STW120NF10
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