STW13NB60

STW13NB60 STH13NB60FI ® N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS(on) ID STW13NB60 STH13NB60FI 600 V 600 V I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Pr Max. I D = 6.5 A V GS = 0 Unit V 1 50 µA µA ± 100 nA Min. Typ. Max. Unit 3 4 5 V 0.48 0.54 Ω 13 Test Conditions Forward Transconductance uc Min. ) s t( A Min. Typ. 8 12 Max. Unit S 2600 325 30 pF pF pF STW13NB60 STH13NB60FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. 27 13 t d(on) tr Turn-on delay Time Rise Time V DD = 300 V R G = 4.7 Ω ID = 2.5 A VGS = 10 V Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V ID = 13 A V GS = 10 V Unit ns ns 58 15.5 23 82 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 480V I D = 13 A R G = 4.7 Ω V GS = 10 V SOURCE DRAIN DIODE Symbol ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD =13 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 13 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C ) s ( ct u d o r P e Safe Operating Area for TO-247 e t le V GS = 0 so (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area ns ns ns 15 15 25 b O - c u d Typ. o r P ) s t( Max. Unit 13 52 A A 1.6 V 630 ns 6.8 µC 22 A Safe Operating Area for ISOWATT218 t e l o s b O 3/9 STW13NB60 STH13NB60FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Output Characteristics Transfer Characteristics e t le ) s ( ct r P e u d o Transconductance t e l o s b O 4/9 c u d o r P o s b O - Static Drain-source On Resistance ) s t( STW13NB60 STH13NB60FI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e Source-drain Diode Forward Characteristics t e l o s b O 5/9 STW13NB60 STH13NB60FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o r P e Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times t e l o s b O 6/9 o s b O - o r P ) s t( STW13NB60 STH13NB60FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 L 19.7 20.3 0.776 L3 14.2 14.8 0.559 L4 34.6 L5 5.5 M 2 uc d o r 1.362 P e let 0.779 0.582 0.217 3 ) s ( ct ) s t( 0.626 0.079 0.118 o s b O - u d o r P e t e l o s b O P025P 7/9 STW13NB60 STH13NB60FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 L2 19.1 19.9 0.752 L3 22.8 23.6 0.897 L4 40.5 42.5 1.594 L5 4.85 5.25 0.190 L6 20.25 20.75 0.797 M 3.5 3.7 0.137 N 2.1 2.3 0.082 so L3 (s) C t e l o L2 1.673 0.206 0.817 0.145 0.090 0.181 b O N L6 F L5 d o r 0.929 D d o r P e uc D1 A t c u 0.783 P e let 4.6 ) s t( 0.834 E U bs G U M H O MAX. 1 2 3 L1 L4 P025C 8/9 STW13NB60 STH13NB60FI c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 9/9