STW14NM65N

STB14NM65N, STF14NM65N STI14NM65N,STP14NM65N,STW14NM65N N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Features Type STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 3 12 A 12 A 12 A(1) 12 A 12 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1. Limited only by maximum temperature allowed ■ ■ ■ 2 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 14NM65N 14NM65N 14NM65N 14NM65N 14NM65N Package I²PAK D²PAK TO-220FP TO-220 TO-247 Packaging Tube Tape and reel Tube Tube Tube Order codes STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N October 2008 Rev 2 1/18 www.st.com 18 Contents STB/F/I/P/W14NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/18 STB/F/I/P/W14NM65N Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220, TO-247 D²PAK, I²PAK Unit TO-220FP V V 12(1) 7.6 (1) 48(1) 30 15 --55 to 150 150 2500 A A A W V/ns V °C °C VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg TJ Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature 12 7.6 48 125 650 ± 25 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS Table 3. Symbol Thermal data Value Parameter TO-220 I²PAK D²PAK 1 62.5 ---30 50 -TO-247 TO-220FP 4.2 62.5 -°C/W °C/W °C/W Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes Unit Rthj-case Rthj-amb Rthj-pcb Tl 300 °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD= 50 V) Max value 3 300 Unit A mJ 3/18 Electrical characteristics STB/F/I/P/W14NM65N 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt (1) IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDD = 520 V, ID=12 A, VGS=10 V VDS = Max rating VDS = Max rating, @125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6 A 2 3 Min. 650 30 1 100 ±100 4 Typ. Max. Unit V V/ns µA µA nA V Ω 0.330 0.380 1. Characteristic value at turn off on inductive load Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq(2) Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS=15 V, ID = 6A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 10 1300 90 8 150 45 7 25 Max. Unit S pF pF pF pF nC nC nC VGS = 0, VDS = 0 to 520 V VDD = 520 V, ID = 12 A, VGS = 10 V, (see Figure 19) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STB/F/I/P/W14NM65N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD =325 V, ID = 6 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Min Typ 11 13 55 20 Max Unit ns ns ns ns Table 8. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12 A, VGS = 0 ISD = 12 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) ISD = 12 A, di/dt = 100 A/µs VDD = 100 V, TJ = 150 °C (see Figure 20) 390 5 25 530 7 25 Test conditions Min Typ Max 12 48 1.3 Unit A A V ns µC A ns µC A VSD (2) trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STB/F/I/P/W14NM65N 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP 6/18 STB/F/I/P/W14NM65N Figure 6. Safe operating area for TO-247 Figure 7. Electrical characteristics Thermal impedance for TO-247 Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance 7/18 Electrical characteristics STB/F/I/P/W14NM65N Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 8/18 STB/F/I/P/W14NM65N Test circuit 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data STB/F/I/P/W14NM65N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STB/F/I/P/W14NM65N Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/18 Package mechanical data STB/F/I/P/W14NM65N TO-220FP mechanical data mm. Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 Typ. Max. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 E H F2 L2 L5 123 L4 12/18 G STB/F/I/P/W14NM65N Package mechanical data TO-262 mechanical data mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 13/18 Package mechanical data STB/F/I/P/W14NM65N D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 14/18 STB/F/I/P/W14NM65N Package mechanical data TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 15/18 Packaging mechanical data STB/F/I/P/W14NM65N 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 16/18 STB/F/I/P/W14NM65N Revision history 6 Revision history Table 9. Date 15-Feb-2008 14-Oct-2008 Document revision history Revision 1 2 First release Table 4: Avalanche characteristics has been corrected. Changes 17/18 STB/F/I/P/W14NM65N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18