STW160N75F3

STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK STripFET™ Power MOSFET Features Type STB160N75F3 STP160N75F3 STW160N75F3 VDSS 75V 75V 75V RDS(on) (max.) 3.7 mΩ 4 mΩ 4 mΩ ID 120 A(1) 1 3 2 1 2 3 120 A(1) 120 A(1) TO-220 TO-247 1. Current limited by package 1 3 ■ ■ Ultra low on-resistance 100% Avalanche tested D²PAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Marking 160N75F3 160N75F3 160N75F3 Package D²PAK TO-220 TO-247 Packaging Tape & reel Tube Tube Order codes STB160N75F3 STP160N75F3 STW160N75F3 October 2007 Rev 2 1/16 www.st.com 16 Contents STB160N75F3 - STP160N75F3 - STW160N75F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 75 ± 20 120 120 480 330 2.2 20 600 -55 to 175 Unit V V A A A W W/°C V/ns mJ °C ID (1) IDM (2) PTOT dv/dt (3) EAS (4) Tj Tstg Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 120A, di/dt < 1100 A/µs, VDD < 60V, TJ < TJMAX 4. Starting TJ = 25°C, ID = 60A, VDD = 25V Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Tl (1) Thermal resistance Value Parameter TO-220 Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb Maximum lead temperature for soldering purpose 62.5 -TO-247 0.45 50 -300 -50 D²PAK °C/W °C/W °C/W °C Unit 1. When mounted on 1 inch² FR4 2 oz Cu 3/16 Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250µA, VGS= 0 Min. Typ. 75 10 100 ±200 Max Unit V µA µA nA V mΩ mΩ IDSS VDS = Max rating, Zero gate voltage V = Max drain current (VGS = 0) DS rating,@125°C Gate body leakage current (VDS = 0) VGS = ±20V 2 TO-220 TO-247 D²PAK 3.5 3.2 IGSS VGS(th) RDS(on) Gate threshold voltage VDS= VGS, ID = 250µA Static drain-source on VGS= 10V, ID= 60A resistance 4 4 3.7 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min Typ 6750 1080 40 85 27 26 Max Unit pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=37.5V, ID = 120A VGS =10V (see Figure 16) 4/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Table 6. Symbol td(on) tr td(off) tf Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=37.5 V, ID= 60A, RG=4.7Ω, VGS=10V, (see Figure 18) Min. Typ. 22 65 100 15 Max. Unit ns ns ns ns Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120A, VGS=0 ISD=120A, VDD= 20 V, di/dt = 100 A/µs, Tj=25°C (see Figure 17) 70 150 4.2 Test conditions Min. Typ. Max. Unit 120 480 1.5 A A V ns nC A 1. Pulse with limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/16 Electrical characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / TO-247 Figure 3. Thermal impedance for TO-220 / TO-247 Figure 4. Safe operating area for D²PAK Figure 5. Thermal impedance for D²PAK Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical characteristics Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics STB160N75F3 - STP160N75F3 - STW160N75F3 8/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Test circuit 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/16 Package mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 12/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Package mechanical data D²PAK mechanical data mm Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0° 4° 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.50 0.055 0.094 10.4 0.393 Typ Max 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 Min 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 inch Typ Max 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.409 0.334 0.208 0.625 0.55 0.68 0.126 0.015 13/16 Packaging mechanical data STB160N75F3 - STP160N75F3 - STW160N75F3 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Revision history 6 Revision history Table 8. Date 07-Feb-2007 02-Oct-2007 Document revision history Revision 1 2 First release New section has been added: Electrical characteristics (curves) Changes 15/16 STB160N75F3 - STP160N75F3 - STW160N75F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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