STF19NM50N, STP19NM50N,
STW19NM50N
N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs
in TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
Features
TAB
Order codes
RDS(on) max
ID
550 V
0.25 Ω
14 A
STF19NM50N
3
1
VDS @ TJmax
3
2
1
TO-220FP
2
TO-220
STP19NM50N
STW19NM50N
• 100% avalanche tested
• Low input capacitance and gate charge
2
3
• Low gate input resistance
1
TO-247
Applications
Figure 1. Internal schematic diagram
• Switching applications
Description
'7$%
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
*
6
$0Y
Table 1. Device summary
Order codes
Marking
Packages
STF19NM50N
STP19NM50N
TO-220FP
19NM50N
STW19NM50N
September 2013
This is information on a product in full production.
Packaging
TO-220
Tube
TO-247
DocID17079 Rev 2
1/18
www.st.com
Contents
STF19NM50N, STP19NM50N, STW19NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
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DocID17079 Rev 2
STF19NM50N, STP19NM50N, STW19NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-247
TO-220FP
VDS
Drain-source voltage
500
V
VGS
Gate-source voltage
± 25
V
ID
ID
IDM
(2)
PTOT
dv/dt (3)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
14 (1)
A
10
10
(1)
A
56
(1)
A
Drain current (pulsed)
56
Total dissipation at TC = 25 °C
110
30
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
14
15
W
V/ns
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 14 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3. Thermal data
Value
Symbol
Parameter
Unit
TO-220
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
TO-247
1.14
62.5
50
TO-220FP
4.17
°C/W
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
6
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
208
mJ
DocID17079 Rev 2
3/18
18
Electrical characteristics
2
STF19NM50N, STP19NM50N, STW19NM50N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
500
V
IDSS
Zero gate voltage
VDS = 500 V
drain current (VGS = 0) VDS = 500 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±100
nA
3
4
V
0.2
0.25
Ω
Min.
Typ.
Max.
Unit
-
1000
-
pF
-
72
-
pF
-
3
-
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 7 A
resistance
2
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq(1)
Equivalent output
capacitance
VDS = 0 to 400 V, VGS = 0
-
202
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID=0
-
4.4
-
Ω
Qg
Total gate charge
-
34
-
nC
Qgs
Gate-source charge
-
5
-
nC
Qgd
Gate-drain charge
VDD = 400 V, ID = 14 A,
VGS = 10 V
(see Figure 17)
-
18
-
nC
VDS = 50 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/18
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
VDD = 250 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Fall time
DocID17079 Rev 2
Min.
Typ.
Max
Unit
-
12
-
ns
-
16
-
ns
-
61
-
ns
-
17
-
ns
STF19NM50N, STP19NM50N, STW19NM50N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Source-drain current
-
14
A
ISDM
(1)
Source-drain current (pulsed)
-
56
A
VSD
(2)
Forward on voltage
-
1.5
V
ISD
trr
ISD = 14 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 14 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 21)
ISD = 14 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 21)
-
296
ns
-
3.5
µC
-
23
A
-
346
ns
-
4
µC
-
24
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID17079 Rev 2
5/18
18
Electrical characteristics
2.1
STF19NM50N, STP19NM50N, STW19NM50N
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP
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Figure 3. Thermal impedance for TO-220FP
LV
HD
DU 6RQ
'
WK 5
LQ D[
Q
LW R \P
UD E
SH HG
2 PLW
/L
V
LV
V
PV
PV
7M &
7F &
6LQJOH
SXOVH
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Figure 4. Safe operating area for TO-220
Figure 5. Thermal impedance for TO-220
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RQ
6
2S
/LP HUD
LWH WLRQ
G LQ
E\ WK
P LV
D[ DU
5 HD
'
LV
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V
V
PV
7M &
7F &
PV
6LQJOH
SXOVH
9'69
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
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R
Q
2S
/LP HUD
LWH WLRQ
G LQ
E\ WK
P LV
D[ DU
5 HD
LV
'6
,'
$
V
V
PV
7M &
7F &
PV
6LQJOH
SXOVH
6/18
9'69
DocID17079 Rev 2
STF19NM50N, STP19NM50N, STW19NM50N
Figure 8. Output characteristics
,'
$
Electrical characteristics
Figure 9. Transfer characteristics
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9*6 9
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$
9'6 9
9
9
9
Figure 10. Normalized VDS vs temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
9'69
9*69
Figure 11. Static drain-source on resistance
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5'6RQ
2KP
1.08
1.06
1.04
1.02
9*6 9
1.00
0.98
0.96
0.94
0.92
-50 -25
0
25
50
75 100
TJ(°C)
Figure 12. Gate charge vs gate-source voltage
9*6
9
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9'6
9'6
9
9'' 9
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Figure 13. Capacitance variations
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&LVV
&RVV
&UVV
4JQ&
DocID17079 Rev 2
9'69
7/18
18
Electrical characteristics
STF19NM50N, STP19NM50N, STW19NM50N
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Normalized on-resistance vs
temperature
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9*6WK
QRUP
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5'6RQ
QRUP
,' $
9'6 9
8/18
7-&
DocID17079 Rev 2
7-&
STF19NM50N, STP19NM50N, STW19NM50N
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 19. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID17079 Rev 2
10%
AM01473v1
9/18
18
Package mechanical data
4
STF19NM50N, STP19NM50N, STW19NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/18
DocID17079 Rev 2
STF19NM50N, STP19NM50N, STW19NM50N
Package mechanical data
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID17079 Rev 2
11/18
18
Package mechanical data
STF19NM50N, STP19NM50N, STW19NM50N
Figure 22. TO-220FP drawing
7012510_Rev_K_B
12/18
DocID17079 Rev 2
STF19NM50N, STP19NM50N, STW19NM50N
Package mechanical data
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID17079 Rev 2
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18
Package mechanical data
STF19NM50N, STP19NM50N, STW19NM50N
Figure 23. TO-220 type A drawing
BW\SH$B5HYB7
14/18
DocID17079 Rev 2
STF19NM50N, STP19NM50N, STW19NM50N
Package mechanical data
Table 11. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID17079 Rev 2
5.70
15/18
18
Package mechanical data
STF19NM50N, STP19NM50N, STW19NM50N
Figure 24. TO-247 drawing
0075325_G
16/18
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5
Revision history
Revision history
Table 12. Document revision history
Date
Revision
Changes
09-Feb-2010
1
First release
03-Sep-2013
2
– Updated: Section 2.1: Electrical characteristics (curves)
– Updated: Section 4: Package mechanical data
– Minor text changes.
DocID17079 Rev 2
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STF19NM50N, STP19NM50N, STW19NM50N
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