STW19NM60N

STW19NM60N Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Features 2 Order code VDS (@Tjmax) RDS(on) max. STW19NM60N 650 V 0.285 Ω PTOT ID 13 A 110 W • Designed for automotive applications and AEC-Q101 qualified 3 • 100% avalanche tested 1 TO-247 • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram $4!" Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STW19NM60N 19NM60N TO-247 Tube October 2013 This is information on a product in full production. DocID024392 Rev 2 1/13 www.st.com 13 Contents STW19NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ............................................... 8 DocID024392 Rev 2 STW19NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V VDS Drain-source voltage 600 VGS Gate- source voltage ± 25 ID Drain current (continuous) at TC = 25 °C 13 A ID Drain current (continuous) at TC = 100 °C 8.2 A Drain current (pulsed) 52 A Total dissipation at TC = 25 °C 110 W 4 A IDM (1) PTOT IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 350 mJ Peak diode recovery voltage slope 15 V/ns dv/dt(2) TJ Tstg Operating junction temperature °C -55 to 150 Storage temperature °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDD ≤ 80 % V (BR)DSS, VDS(peak) ≤ V(BR)DSS Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.14 °C/W Rthj-amb Thermal resistance junction-amb max 50 °C/W DocID024392 Rev 2 3/13 Electrical characteristics 2 STW19NM60N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 Min. Typ. Max. 600 Unit V VDS = 600 V 1 µA VDS = 600 V, TJ=125 °C 10 µA ±100 nA 4 V IDSS Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±25 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS= 10 V, ID=6.5 A 2 3 0.260 0.285 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 1000 - pF - 60 - pF - 3 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Output equivalent capacitance VDS = 0, to 480 V, VGS=0 - 225 - pF Rg Intrinsic resistance f=1 MHz open drain - 3.5 - Ω Qg Total gate charge - 35 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge VDD = 480 V, ID = 13 A VGS = 10 V (see Figure 15) - 20 - nC VDS = 50 V, f =1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/13 DocID024392 Rev 2 STW19NM60N Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14) Rise time td(off) tf Turn-off delay time Fall time Min. Typ. Max. Unit - 12 - ns - 15 - ns - 55 - ns - 25 - ns Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Min. Typ. Max. Unit Source-drain current - 13 A Source-drain current (pulsed) - 52 A - 1.6 V Forward on voltage Test conditions ISD = 13 A, VGS=0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD =13 A, di/dt =100 A/µs, VDD = 60 V (see Figure 16) VDD = 60 V di/dt =100 A/µs, ISD = 13 A Tj = 150°C (see Figure 16) - 300 ns - 4.0 µC - 25 A - 360 ns - 4.5 µC - 25 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024392 Rev 2 5/13 Electrical characteristics 2.1 STW19NM60N Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM05527v1 a Op Lim era ite tion d by in th m is ax a r R e DS (o 10 n) is ID (A) 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 10 1 VDS(V) 100 Figure 4. Output characteristics ID (A) Figure 5. Transfer characteristics AM05528v1 VGS=10V VDS=19V 7V 24 24 6V 20 20 16 16 12 12 5V 8 8 4 4 0 0 AM05529v1 ID (A) 4 8 12 20 16 4V VDS(V) Figure 6. Static drain-source on-resistance AM05530v1 RDS(on) (Ω) 0.28 0 0 2 6 8 10 VGS(V) Figure 7. Gate charge vs gate-source voltage AM05531v1 VDS VGS (V) 12 VGS = 10 V 4 0.27 VDD=480V (V) ID=13A 500 10 0.26 400 VDS 0.25 8 0.24 6 300 0.23 200 4 0.22 0.20 0 6/13 100 2 0.21 2 4 6 8 10 12 ID(A) DocID024392 Rev 2 0 0 10 20 30 40 0 Qg(nC) STW19NM60N Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM05532v1 C (pF) 1000 AM05533v1 Eoss (µJ) 7 6 Ciss 5 100 4 Coss 3 10 2 1 Crss 1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM05534v2 VGS(th) (norm) 0 0 VDS(V) 100 200 300 400 500 600 VDS(V) Figure 11. Normalized on-resistance vs temperature AM05535v2 RDS(on) (norm) ID = 250 µA 1.2 VGS = 10 V 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0 -50 -25 0 25 50 75 100 125 Figure 12. Normalized VDS vs temperature AM09028v2 VDS (norm) 0 -50 -25 TJ(°C) ID=1mA 25 0 75 100 125 TJ(°C) 50 Figure 13. Source-drain diode forward vs temperature AM14768v1 VSD (V) 1.10 1.4 1.05 1.2 TJ=-50°C TJ=25°C 1.0 1.00 0.8 0.95 0.6 0.90 0.4 0.85 0.80 -50 -25 TJ=150°C 0.2 0 25 50 75 100 125 TJ(°C) DocID024392 Rev 2 0 0 2 4 6 8 10 12 ISD(A) 7/13 Test circuits 3 STW19NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID024392 Rev 2 10% AM01473v1 STW19NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID024392 Rev 2 9/13 Package mechanical data STW19NM60N Table 8. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 10/13 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024392 Rev 2 5.70 STW19NM60N Package mechanical data Figure 20. TO-247 drawing 0075325_G DocID024392 Rev 2 11/13 Revision history 5 STW19NM60N Revision history Table 9. Document revision history 12/13 Date Revision Changes 21-Mar-2013 1 Initial release. 24-Oct-2013 2 – Modified: title, features and applications – Minor text changes DocID024392 Rev 2 STW19NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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