STB20N65M5, STI20N65M5,
STP20N65M5, STW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET
in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
TAB
VDS @
TJmax
RDS(on)
max
ID
2
3
STP20N65M5
3
12
1
STB20N65M5
STI20N65M5
TAB
D2PAK
710 V
0.19 Ω
I2PAK
18 A
TAB
STW20N65M5
■
Worldwide best RDS(on) * area
■
Higher VDSS rating and high dv/dt capability
■
Excellent switching performance
■
100% avalanche tested
3
1
2
2
3
1
TO-220
Figure 1.
TO-247
Internal schematic diagram
Applications
■
Switching applications
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
'
3
!-V
Device summary
Order codes
Marking
Package
Packaging
STB20N65M5
D2PAK
Tape and reel
STI20N65M5
I2PAK
20N65M5
STP20N65M5
TO-220
STW20N65M5
TO-247
February 2013
This is information on a product in full production.
Doc ID 022865 Rev 2
Tube
1/21
www.st.com
21
Contents
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
.............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
.............................................. 9
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
VGS
Absolute maximum ratings
Parameter
Gate-source voltage
Value
Unit
± 25
V
ID
Drain current (continuous) at TC = 25 °C
18
A
ID
Drain current (continuous) at TC = 100 °C
11.3
A
IDM (1)
Drain current (pulsed)
72
A
PTOT
Total dissipation at TC = 25 °C
130
W
Peak diode recovery voltage slope
15
V/ns
- 55 to 150
°C
150
°C
dv/dt
(1)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. ISD ≤ 18 A, di/dt ≤400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Table 3.
Thermal data
Value
Symbol
Parameter
D2PAK
I2PAK,
TO-220
Rthj-case Thermal resistance junction-case max
0.96
Rthj-amb
62.5
Rthj-pcb(1)
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
30
Unit
TO-247
°C/W
50
°C/W
°C/W
1. When mounted on 1 inch² FR-4, 1 Oz copper board.
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax )
4
A
EAS
Single pulse avalanche energy (starting
tj=25°C, Id= IAR; Vdd=50 V)
270
mJ
Doc ID 022865 Rev 2
3/21
Electrical characteristics
2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
Symbol
Ciss
Coss
Crss
Co(tr)(1)
Co(er)
(2)
Typ.
Max.
Unit
650
V
1
100
µA
µA
± 100
nA
4
5
V
0.160
0.19
Ω
Min.
Typ.
Max.
Unit
-
1434
38
3.7
-
pF
pF
pF
-
118
-
pF
-
35
-
pF
-
3.5
-
Ω
-
36
7.5
18
-
nC
nC
nC
VGS = ± 25 V
VGS(th)
Table 6.
Min.
3
VGS = 10 V, ID = 9 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
Equivalent
capacitance time
related
VDS = 0 to 520 V, VGS = 0
Equivalent
capacitance energy
related
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 10 V
(see Figure 18)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 7.
Symbol
td(v)
tr(v)
tf(i)
tc(off)
Table 8.
Switching times
Parameter
Test conditions
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 12 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
43
7.5
7.5
11.5
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
18
72
A
A
ISD = 18 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)
-
288
4
27
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
-
342
4.7
28
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022865 Rev 2
5/21
Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D²PAK,
I²PAK, TO-220
Figure 3.
Thermal impedance for D²PAK,
I²PAK, TO-220
Figure 5.
Thermal impedance for TO-247
Figure 7.
Transfer characteristics
AM15584v1
a
DS
Op
Lim era
ite tion
d
by in th
m is
ax a r
R e
(o
n)
is
ID
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
Figure 4.
10
1
VDS(V)
100
Safe operating area for TO-247
AM15586v1
n)
(o
DS
Op
Lim era
ite tion
d
by in th
m is
ax a r
R e
a
is
ID
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
Figure 6.
10
1
VDS(V)
100
Output characteristics
AM15587v1
ID
(A)
40
VGS= 9, 10 V
35
VGS= 8 V
30
25
VGS= 7 V
20
20
15
15
10
10
5
6/21
VDS= 25 V
35
30
25
0
0
AM15588v1
ID
(A)
40
5
10
15
VGS= 6 V
5
20
0
3
25 VDS(V)
Doc ID 022865 Rev 2
4
5
6
7
8
9 VGS(V)
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM15589v1
VGS
(V)
VDS
VDS
(V)
500
VDD=520V
12
ID=9A
Static drain-source on-resistance
AM15590v1
RDS(on)
(Ω)
0.195
VGS=10V
0.185
10
400
0.175
8
300
6
0.155
200
4
0.145
100
2
0
0
0.165
20
10
30
40
0
Qg(nC)
Figure 10. Capacitance variations
0.125
0
5
10
15
ID(A)
Figure 11. Output capacitance stored energy
AM15591v1
C
(pF)
0.135
AM15592v1
Eoss
(µJ)
7
10000
6
Ciss
1000
5
4
100
3
Coss
2
10
1
Crss
1
0.1
1
10
100
Figure 12. Normalized gate threshold voltage
vs temperature
AM05459v1
VGS(th)
(norm)
1.10
0
0
VDS(V)
ID = 250 µA
VDS = VGS
100
400 500 600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
AM05460v1
RDS(on)
(norm)
2.1
1.9
1.00
200 300
VGS= 10V
ID= 9 A
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Doc ID 022865 Rev 2
0
25
50
75 100
TJ(°C)
7/21
Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 14. Normalized BVDSS vs temperature
AM10399v1
VDS
(norm)
1.08
Figure 15. Drain-source diode forward
characteristics
AM05461v1
VSD
(V)
TJ=-50°C
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0.94
0.92
-50 -25
0
25
50
TJ(°C)
75 100
Figure 16. Switching losses vs gate resistance
(1)
AM15593v1
E (μJ)
250
VDD=400V
VGS=10V
ID=12A
Eon
200
150
Eoff
100
50
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/21
Doc ID 022865 Rev 2
0
0
10
20
30
40
50 ISD(A)
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
6$$
6
K
K
N&
&
2,
&
6'3
)' #/.34
6$$
6I 6 6'-!8
6$
2'
&
$54
$54
6'
K
07
K
K
07
!-V
!-V
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
!
!
$54
&!34
$)/$%
"
"
,
!
$
'
3
6$
, (
&
"
&
$
6$$
&
&
6$$
)$
'
2'
3
6I
$54
0W
!-V
Figure 21. Unclamped inductive waveform
!-V
Figure 22. Switching time waveform
Inductive Load Turn - off
6"2 $33
Id
6$
90%Vds
90%Id
td(v)
)$Vgs
90%Vgs
on
)$
))
Vgs(I(t))
6$$
6$$
10%Id
10%Vds
Vds
tr(v)
!-V
Doc ID 022865 Rev 2
tf(i)
tc(off)
AM05540v1
9/21
Package mechanical data
4
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 9.
Package mechanical data
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
Doc ID 022865 Rev 2
11/21
Package mechanical data
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimension are in millimeters
12/21
Doc ID 022865 Rev 2
Footprint
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 10.
Package mechanical data
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Figure 25. I²PAK (TO-262) drawing
0004982_Rev_H
Doc ID 022865 Rev 2
13/21
Package mechanical data
Table 11.
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/21
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Package mechanical data
Figure 26. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 022865 Rev 2
15/21
Package mechanical data
Table 12.
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
TO-247 mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
16/21
Typ.
5.45
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
Doc ID 022865 Rev 2
5.50
5.70
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Package mechanical data
Figure 27. TO-247 drawing
0075325_G
Doc ID 022865 Rev 2
17/21
Packaging mechanical data
5
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Packaging mechanical data
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
18/21
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 022865 Rev 2
Max.
330
13.2
26.4
30.4
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Packaging mechanical data
Figure 28. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 29. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 022865 Rev 2
19/21
Revision history
6
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Revision history
Table 14.
Document revision history
Date
Revision
06-Mar-2012
1
First release.
2
– The part numbers STF20N65M5 and STFI20N65M5 have been
moved to a separate datasheet.
– Added: part numbers STB20N65M5 and STI20N65M5
– Modified: note1 on Table 2, Table 4 values and typical values of
Table 5, 6, 7, 8
– Added: Rthj-pcb and note1 on Table 3
– Updated: Section 4: Package mechanical data
– Added: Section 2.1: Electrical characteristics (curves)
01-Feb-2013
20/21
Changes
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
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21/21
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