STW20N95K5

STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 Datasheet packages - production data Features Order code VDS RDS(on) max. PTOT ID 250 W STB20N95K5 STF20N95K5 950 V 0.330 Ω 40 W 17.5 A STP20N95K5 250 W STW20N95K5 Figure 1: Internal schematic diagram      Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking STB20N95K5 STF20N95K5 STP20N95K5 20N95K5 STW20N95K5 January 2017 Package Packing D²PAK Tape and reel TO-220FP TO-220 Tube TO-247 DocID16825 Rev 5 This is information on a product in full production. 1/22 www.st.com Contents STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/22 4.1 D2PAK package information ............................................................ 10 4.2 TO-220FP package information ...................................................... 13 4.3 TO-220 type A package information ................................................ 15 4.4 TO-247 package information ........................................................... 17 4.5 D2PAK packing information ............................................................. 19 Revision history ............................................................................ 21 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Value Symbol D²PAK Parameter Unit TO-220FP TO-220 TO-247 VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 17.5 A ID Drain current (continuous) at TC = 100 °C 11 A ID(1) Drain current (pulsed) 70 A PTOT Total dissipation at TC = 25 °C ESD Gate-source human body model (R= 1,5 kΩ, C = 100 pF) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt (2) (3) dv/dt Tj W 2 kV 2500 Peak diode recovery voltage slope 6 MOSFET dv/dt ruggedness 50 Operating junction temperature range Tstg 40 250 V/ns -55 to 150 Storage temperature range V °C Notes: (1)Pulse (2)I SD (3)V width limited by safe operating area. ≤ 17.5 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS DS ≤ 760 V Table 3: Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Thermal resistance junction-pcb TO-220 TO-247 3.1 0.5 62.5 TO-220FP 50 °C/W 62.5 30 Notes: (1) When mounted on 1 inch² FR-4 board, 2 Oz Cu. Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by T jmax.) 6 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ DocID16825 Rev 5 3/22 Electrical characteristics 2 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol Parameter V(BR)DSS Drain-source breakdown voltage Test conditions Min. VGS = 0 V, ID = 1 mA 950 Typ. Max. Unit V VGS = 0 V, VDS = 950 V 1 µA IDSS Zero-gate voltage drain current VGS = 0 V, VDS = 950 V TC = 125 °C(1) 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 9 A 3 4 5 V 0.275 0.330 Ω Min. Typ. Max. Unit - 1550 - pF - 140 - pF - 1 - pF - 65 - pF 178 - pF Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Ciss Parameter Test conditions Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Co(er)(1) Equivalent capacitance energy related Co(tr)(2) Equivalent capacitance time related VGS = 0 V, VDS = 0 to 760 V Rg Intrinsic gate resistance f = 1 MHz , ID = 0 A - 3.5 - Ω Qg Total gate charge - 48 - nC Qgs Gate-source charge - 9 - nC Qgd Gate-drain charge VDD = 760 V, ID = 17.5 A VGS= 10 V (see Figure 20: "Test circuit for gate charge behavior") - 32.5 - nC Notes: (1)C o(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. (2)C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 4/22 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Electrical characteristics Table 7: Switching times Symbol Parameter td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Test conditions VDD= 475 V, ID = 9 A, RG = 4.7 Ω VGS = 10 V (see Figure 19: "Test circuit for resistive load switching times" and Figure 24: "Switching time waveform") Fall time Min. Typ. Max. Unit - 18 - ns - 9 - ns - 65 - ns - 18 - ns Min. Typ. Max. Unit Table 8: Source-drain diode Symbol Parameter Test conditions Source-drain current - 17.5 A ISDM(1) Source-drain current (pulsed) - 70 A VSD(2) Forward on voltage ISD = 17.5 A, VGS = 0 V - 1.5 V ISD = 17.5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 21: "Test circuit for inductive load switching and diode recovery times") - 513 ns - 12 µC - 46 A ISD = 17.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21: "Test circuit for inductive load switching and diode recovery times") - 670 ns - 15 µC ISD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current - 44 A Test conditions Min. Typ. Max. Unit IGS = ± 1 mA, ID = 0 A 30 - - V Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol V(BR) GSO Parameter Gate-source breakdown voltage The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DocID16825 Rev 5 5/22 Electrical characteristics 2.1 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Electrical characteristics (curves) Figure 2: Safe operating area for D²PAK and TO-220 Figure 3: Thermal impedance for D²PAK and TO-220 Figure 4: Safe operating area for TO-220FP Figure 5: Thermal impedance for TO-220FP Figure 6: Safe operating area for TO-247 Figure 7: Thermal impedance for TO-247 6/22 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Electrical characteristics Figure 8: Output characteristics Figure 9: Transfer characteristics Figure 10: Gate charge vs gate-source voltage Figure 11: Static drain-source on-resistance Figure 12: Capacitance variation Figure 13: Output capacitance stored energy DocID16825 Rev 5 7/22 Electrical characteristics STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 14: Normalized gate threshold voltage vs temperature Figure 15: Normalized on-resistance vs temperature Figure 16: Maximum avalanche energy vs. starting TJ Figure 17: Normalized V(BR)DSS vs. temperature Figure 18: Source-drain diode forward characteristics 8/22 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 3 Test circuits Test circuits Figure 19: Test circuit for resistive load switching times Figure 20: Test circuit for gate charge behavior VDD RL IG= CONST VGS + pulse width 2200 μF 100 Ω D.U.T. 2.7 kΩ VG 47 kΩ 1 kΩ AM01469v10 Figure 21: Test circuit for inductive load switching and diode recovery times Figure 23: Unclamped inductive waveform DocID16825 Rev 5 Figure 22: Unclamped inductive load test circuit Figure 24: Switching time waveform 9/22 Package information 4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D2PAK package information Figure 25: D²PAK (TO-263) type A package outline 0079457_A_rev22 10/22 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Package information Table 10: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° DocID16825 Rev 5 8° 11/22 Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 26: D²PAK (TO-263) recommended footprint (dimensions are in mm) 12/22 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 4.2 Package information TO-220FP package information Figure 27: TO-220FP package outline DocID16825 Rev 5 13/22 Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 11: TO-220FP package mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/22 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 4.3 Package information TO-220 type A package information Figure 28: TO-220 type A package outline DocID16825 Rev 5 15/22 Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 12: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 D1 16/22 Typ. 15.75 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID16825 Rev 5 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 4.4 Package information TO-247 package information Figure 29: TO-247 package outline 0075325_8 DocID16825 Rev 5 17/22 Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Table 13: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18/22 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 DocID16825 Rev 5 5.50 5.70 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 4.5 Package information D2PAK packing information Figure 30: Tape outline DocID16825 Rev 5 19/22 Package information STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 Figure 31: Reel outline Table 14: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. 20/22 Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 Max. 330 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID16825 Rev 5 13.2 26.4 30.4 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 5 Revision history Revision history Table 15: Document revision history Date Revision 25-Nov-2009 1 First release. 12-Jan-2010 2 Corrected VGS value in Table 2: Absolute maximum ratings. 22-Dec-2011 3 Inserted device in D2PAK. Document status promoted from preliminary data to datasheet. Added: Section 2.1: Electrical characteristics (curves) Updated Section 4: Package mechanical data. Added Section 5: Packaging mechanical data. Minor text changes. 06-Jun-2012 4 Figure 9: Transfer characteristics has been updated. 5 Updated title, features, description and schematic diagram in cover page. Minor text changes in Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Updated Section 2.1: "Electrical characteristics (curves)" Updated package information section. 16-Jan-2017 Changes DocID16825 Rev 5 21/22 STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 22/22 DocID16825 Rev 5