STW21N65M5

STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247 Features VDSS @ TJmax RDS(on) max ID PW STB21N65M5 17 A 125 W STF21N65M5 17 A(1) 30 W 17 A 125 W Order codes 3 STI21N65M5 710 V 3 12 2 1 TO-220 I²PAK < 0.179 Ω STP21N65M5 STW21N65M5 2 3 1. Limited only by maximum temperature allowed Worldwide best RDS(on) * area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Figure 1. 3 1 D²PAK ■ 3 1 1 TO-247 2 TO-220FP Internal schematic diagram $ Application Switching applications Description ' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes STB21N65M5 STF21N65M5 STI21N65M5 STP21N65M5 STW21N65M5 May 2011 3 !-V Marking Package Packaging 21N65M5 D²PAK TO-220FP I²PAK TO-220 TO-247 Tape and reel Tube Tube Tube Tube Doc ID 15427 Rev 4 1/22 www.st.com 22 Contents STB/F/I/P/W21N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/22 .............................................. 9 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID ID Parameter Unit TO-220, I²PAK, D²PAK, TO-247 Gate-source voltage TO-220FP ± 25 Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 17 V 17 10.7 (1) 10.7 (1) A A IDM (2) Drain current (pulsed) 68 68(1) A PTOT Total dissipation at TC = 25 °C 125 30 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 400 mJ 15 V/ns dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 Max. operating junction temperature V - 55 to 150 °C 150 °C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 17 A, di/dt ≤ 400 A/µs; VPeak < V(BR)DSS, VDD = 400 V. Table 3. Thermal data Value Symbol Parameter Unit D²PAK I²PAK TO-220 TO-247 TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junctionambient max Rthj-pcb Thermal resistance junction-pcb max Tl 1 62.5 50 30 Maximum lead temperature for soldering purpose Doc ID 15427 Rev 4 4.17 °C/W 62.5 °C/W °C/W 300 °C 3/22 Electrical characteristics 2 STB/F/I/P/W21N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.150 0.179 Ω Min. Typ. Max. Unit - 1950 46 3 - pF pF pF - 133 - pF - 44 - pF - 2.5 - Ω - 50 13 23 - nC nC nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss 3 VGS = 10 V, ID = 8.5 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 8.5 A, VGS = 10 V (see Figure 20) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. 4/22 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 Table 6. Symbol td (v) tr (v) tf (i) tc(off) Table 7. Electrical characteristics Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 11 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21) (see Figure 24) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 37 10 12 24 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 17 68 A A ISD = 17 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD = 100 V (see Figure 21) - 294 4 28 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 21) - 340 5 29 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15427 Rev 4 5/22 Electrical characteristics STB/F/I/P/W21N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK, I²PAK Thermal impedance for TO-220, D²PAK, I²PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 AM05490v1 is ID (A) DS (o n) a 1µs Op Lim era ite tion d by in th m is ax ar R e 10 Figure 3. 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Sinlge pulse 0.1 0.1 Figure 4. 10 1 100 Safe operating area for TO-220FP AM05491v1 ID (A) 10 1 VDS(V) is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L 1µs s hi 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for TO-247 AM05492v1 ID (A) on ) S( Op Lim era ite tion d by in th m is ax ar RD ea is 1µs 10 1 10µs 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Sinlge pulse 0.01 0.1 6/22 1 10 100 VDS(V) Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 Figure 8. Electrical characteristics Output characteristics Figure 9. AM05493v1 ID (A) VGS=10V 35 Transfer characteristics AM05494v1 ID (A) VDS=15V 35 30 30 7V 25 25 20 20 15 15 10 10 6V 5 5 5V 0 0 5 10 20 15 25 30 0 0 VDS(V) 2 4 8 6 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM05496v1 VGS (V) VDD=520V 12 VDS VGS 480 0.17 10 400 0.16 8 320 6 240 4 160 2 80 ID=8.5A AM05495v1 RDS(on) (Ω) VGS= 10 V 0.15 0.14 0.13 0 0 20 40 60 0 Qg(nC) Figure 12. Capacitance variations 0.11 0.10 0 2 4 6 8 10 12 14 16 ID(A) Figure 13. Output capacitance stored energy AM05497v1 C (pF) 0.12 AM05498v1 Eoss (µJ) 9 8 10000 Ciss 7 1000 6 100 4 5 Coss 10 2 Crss 1 0.1 3 1 10 100 VDS(V) Doc ID 15427 Rev 4 1 0 0 100 200 300 400 500 600 VDS(V) 7/22 Electrical characteristics STB/F/I/P/W21N65M5 Figure 14. Normalized gate threshold voltage vs temperature AM05500v1 VGS(th) (norm) 1.10 Figure 15. Normalized on resistance vs temperature AM05501v1 RDS(on) (norm) 2.1 ID =250 µA ID= 8.5 A 1.9 VGS= 10 V 1.7 1.00 1.5 0.90 1.3 1.1 0.80 0.9 0.70 -50 0.5 -50 -25 0.7 -25 25 0 50 TJ(°C) 75 100 125 Figure 16. Source-drain diode forward characteristics 25 50 75 100 125 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM05502v1 VSD (V) 0 1.0 BVDSS (norm) 1.07 0.9 1.05 TJ=-50°C AM05499v1 ID= 1 mA 1.03 0.8 TJ=25°C 1.01 0.7 0.99 TJ=150°C 0.6 0.97 0.5 0.95 0.4 0 10 30 20 40 50 ISD(A) 0.93 -50 -25 Figure 18. Switching losses vs gate resistance (1) AM05541v1 E (µJ) 160 140 Eon ID=11A VDD=400V VGS=10V 120 Eoff 100 80 60 40 20 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. 8/22 Doc ID 15427 Rev 4 0 25 50 75 100 TJ(°C) STB/F/I/P/W21N65M5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 24. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 15427 Rev 4 Tfall Tcross --over AM05540v2 9/22 Package mechanical data 4 STB/F/I/P/W21N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/22 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 Table 8. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 25. TO-220FP drawing mechanical data L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15427 Rev 4 11/22 Package mechanical data Table 9. STB/F/I/P/W21N65M5 I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H 12/22 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 Table 10. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15427 Rev 4 13/22 Package mechanical data STB/F/I/P/W21N65M5 Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S 14/22 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 Table 11. Package mechanical data TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 15427 Rev 4 15/22 Package mechanical data STB/F/I/P/W21N65M5 Figure 28. TO-247 drawing 0075325_F 16/22 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 Table 12. Package mechanical data D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 15427 Rev 4 17/22 Package mechanical data STB/F/I/P/W21N65M5 Figure 29. D²PAK (TO-263) drawing 0079457_R 18/22 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 5 Packaging mechanical data Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 Figure 30. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 15427 Rev 4 19/22 Packaging mechanical data STB/F/I/P/W21N65M5 Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 Doc ID 15427 Rev 4 STB/F/I/P/W21N65M5 6 Revision history Revision history Table 14. Document revision history Date Revision Changes 24-Feb-2009 1 First release 27-Feb-2009 2 Corrected package information on first page. 11-Nov-2009 3 Document status promoted from preliminary data to datasheet. 11-May-2011 4 RDS(on) values have been updated (see Table 4: On /off states and Figure 11: Static drain-source on resistance). Doc ID 15427 Rev 4 21/22 STB/F/I/P/W21N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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