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STW21NM60N

STW21NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    MOSFET N-CH 600V 17A TO-247

  • 数据手册
  • 价格&库存
STW21NM60N 数据手册
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features Type STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 3 3 3 1 2 17 A 17 A 17 A(1) 17 A 17 A 1 2 1 TO-220 D2PAK TO-220FP 1. Limited by maximum temperature allowed ■ ■ ■ 3 12 2 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. I2PAK TO-247 Application ■ Internal schematic diagram Switching applications Description This series of devices implements the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking B21NM60N B21NM60N F21NM60N P21NM60N W21NM60N Package D2PAK I 2PAK Order codes STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N Packaging Tape and reel Tube Tube Tube Tube TO-220FP TO-220 TO-247 February 2008 Rev 7 1/18 www.st.com 18 Contents STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220/D2PAK I2PAK / TO-247 600 ±25 17 10 68 140 15 -–55 to 150 150 2500 17 (1) Unit TO-220FP V V A A A W V/ns V °C °C VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25 °C) Storage temperature Max. operating junction temperature 10(1) 68(1) 30 PTOT dv/dt (3) VISO Tstg Tj 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 17 A, di/dt ≤ 480 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-pcb Rthj-amb Tl Thermal data Parameter Thermal resistance junctioncase max Thermal resistance junctionpcb max Thermal resistance junctionambient max Maximum lead temperature for soldering purpose -62.5 TO-220 D²PAK I²PAK 0.89 30 -300 -62.5 TO-220FP TO-247 4.21 -0.89 -50 Unit °C/W °C/W °C/W °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) Max value 8.5 610 Unit A mJ 3/18 Electrical characteristics STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Value Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. V 48 1 100 100 2 3 0.170 4 0.220 V/ns µA µA nA V Ω Unit V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) ID = 1 mA, VGS = 0 VDD= 480 V, ID= 17 A, VGS= 10 V VDS = Max rating VDS = Max rating @125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 8.5 A 600 1. Characteristic value at turn off on inductive load Table 6. Symbol gfs (1) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 15 V, ID = 8.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 12 1900 110 15 282 22 15 84 31 66 10 33 2 Max. Unit S pF pF pF Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Rg VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 8.5 A RG = 4.7 Ω VGS = 10 V (see Figure 23), (see Figure 18) VDD = 480 V, ID = 17 A, VGS = 10 V, (see Figure 19) f=1 MHz Gate DC Bias = 0 test signal level = 20 mV open drain pF ns ns ns ns nC nC nC Ω 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, VGS = 0 ISD = 17 A, VDD = 100 V di/dt=100 A/µs (see Figure 20) ISD = 17 A,VDD = 100 V di/dt=100 A/µs, Tj = 150 °C (see Figure 20) 372 4.6 25 486 6.3 26 Test conditions Min. Typ. Max. 17 68 1.5 Unit A A V ns µC A ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 5/18 Electrical characteristics STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 6/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/18 Electrical characteristics STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 15. Normalized on resistance vs temperature Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDss vs temperature 8/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Test circuit 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/18 Package mechanical data STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-220FP mechanical data Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 Dia F1 D F G1 H F2 L2 L5 E 123 L4 7012510-I 12/18 G STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Package mechanical data TO-262 mechanical data mm Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 inch Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 13/18 Package mechanical data STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 14/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Package mechanical data TO-247 mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max . 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 15/18 Packing mechanical data STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 16/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Revision history 6 Revision history Table 8. Date 19-Oct-2005 07-Nov-2005 29-Nov-2005 11-Jan-2007 19-Jan-2007 27-Apr-2007 19-Feb-2008 Document revision history Revision 1 2 3 4 5 6 7 First release. Modified curves Figure 12 Complete version The document has been reformatted Typo mistake on Table 6 Modified curves Figure 11 and Figure 15 Figure 13 has been modified Changes 17/18 STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18