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STW23NM60N

STW23NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    MOSFET N-CH 600V 19A TO-247

  • 数据手册
  • 价格&库存
STW23NM60N 数据手册
STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET Features Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N 1. Limited only by maximum temperature allowed ■ ■ ■ VDSS (@Tjmax) RDS(on) max ID 1 3 3 12 19 A 19 A 650 V 0.180 Ω 19 A (1) D²PAK 2 1 3 I²PAK 19 A 19 A 3 1 2 TO-247 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking 23NM60N 23NM60N 23NM60N 23NM60N 23NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N March 2008 Rev 3 1/19 www.st.com 19 Contents STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 600 ± 25 19 11.7 76 150 15 --55 to 150 150 2500 19 (1) 11.7 (1) 76 (1) 35 Unit VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Storage temperature Max. operating junction temperature V V A A A W V/ns V °C °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 19 A, di/dt ≤400 A/µs, VDD =80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes -62.5 -TO-220 I²PAK TO-247 D²PAK TO-220FP 3.6 50 --30 62.5 -Unit °C/W °C/W °C/W 0.83 Tl 300 °C 3/19 Electrical ratings STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj= 25 °C, ID = IAS, VDD = 50 V) Max value 9 700 Unit A mJ 4/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 480 V, ID = 19 A, VGS = 10 V VDS = Max rating, VDS = Max rating,@125 °C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 9.5 A 2 3 Min. 600 30 1 100 100 4 Typ. Max. Unit V V/ns µA µA nA V Ω IDSS IGSS VGS(th) RDS(on) 1. 0.150 0.180 Characteristic value at turn off on inductive load Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS =15 V, ID= 9.5 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. 17 2050 140 8 260 Max. Unit S pF pF pF pF VGS = 0, VDS = 0 to 480 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 480 V, ID = 19 A VGS = 10 V (see Figure 19) Rg 4 Ω nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 60 10 30 Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/19 Electrical characteristics STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 9.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Min. Typ. 25 15 90 36 Max. Unit ns ns ns ns Table 8. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19 A, VGS=0 ISD =19 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) VDD = 100 V di/dt =100 A/µs, ISD = 19 A Tj = 150 °C (see Figure 20) 470 7 29 600 9 29 Test conditions Min. Typ. Max. Unit 19 76 1.3 A A V ns µC A ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 6/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 D2PAK - I2PAK Figure 3. Thermal impedance for TO-220 D2PAK - I2PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 7/19 Electrical characteristics Figure 8. Output characteristics STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Figure 9. Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Figure 14. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 9/19 Test circuit STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N 3 Test circuit Figure 19. Gate charge test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 10/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/19 Package mechanical data STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 12/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Package mechanical data TO-220FP mechanical data mm. Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 Typ. Max. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 E H F2 L2 L5 123 L4 G 13/19 Package mechanical data STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N TO-262 (I2PAK) mechanical data mm. DIM. Min. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ. Max. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 14/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Package mechanical data D²PAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° 8° 0° 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 15/19 Package mechanical data STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 16/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 17/19 Revision history STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N 6 Revision history Table 9. Date 18-Sep-2007 14-Dec-2007 04-Feb-2008 Document revision history Revision 1 2 3 First release Modified value on Table 2: Absolute maximum ratings Updated Table 3: Thermal data on page 3 Changes 18/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19