STW24N60DM2

STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet − production data TAB Features TAB Order codes 2 3 1 D2PAK 3 1 VDS @ TJmax RDS(on) max ID 650 V 0.20 Ω 18 A STB24N60DM2 2 TO-220 STP24N60DM2 STW24N60DM2 • Extremely low gate charge and input capacitance 3 • Lower RDS(on) x area vs previous generation 2 1 • Low gate input resistance TO-247 • 100% avalanche tested Figure 1. Internal schematic diagram • Zener-protected • Extremely high dv/dt and avalanche capabilities D(2, TAB) Applications • Switching applications G(1) Description S(3) AM01476v1 These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging D2PAK Tape and reel STB24N60DM2 STP24N60DM2 24N60DM2 TO-220 Tube STW24N60DM2 March 2014 This is information on a product in full production. TO-247 DocID025499 Rev 3 1/21 www.st.com Contents STB24N60DM2, STP24N60DM2, STW24N60DM2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 DocID025499 Rev 3 STB24N60DM2, STP24N60DM2, STW24N60DM2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 18 A ID Drain current (continuous) at TC = 100 °C 11 A IDM (1) Drain current (pulsed) 72 A PTOT Total dissipation at TC = 25 °C 150 W Peak diode recovery voltage slope 40 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C dv/dt (2) dv/dt(3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 18 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V. 3. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter D2PAK Unit TO-220 Rthj-case Thermal resistance junction-case max max(1) Rthj-pcb Thermal resistance junction-pcb Rthj-amb Thermal resistance junction-ambient max TO-247 0.83 °C/W 30 °C/W 62.5 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 3.5 A EAS Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50) 180 mJ DocID025499 Rev 3 3/21 21 Electrical characteristics 2 STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. V 1.5 μA 100 μA ±10 μA 4 5 V 0.175 0.200 Ω Min. Typ. Max. Unit - 1055 - pF - 56 - pF - 2.4 - VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance Unit 600 VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 3 VGS = 10 V, ID = 9 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 259 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 7 - Ω Qg Total gate charge - 29 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge VDD = 480 V, ID = 18 A, VGS = 10 V (see Figure 17) - 12 - nC VDS = 100 V, f = 1 MHz, VGS = 0 pF 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/21 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and 21) Fall time DocID025499 Rev 3 Min. Typ. Max. Unit - 15 - ns - 8.7 - ns - 60 - ns - 15 - ns STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical characteristics Table 8. Source drain diode Symbol ISD(1) (2) ISDM VSD (3) trr Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 18 A Source-drain current (pulsed) - 72 A - 1.6 V Forward on voltage ISD = 18 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 18 A, di/dt = 100 A/μs VDD = 60 V (see Figure 18) ISD = 18 A, di/dt = 100 A/μs VDD = 60 V, Tj = 150 °C (see Figure 18) - 155 ns - 956 nC - 12.5 A - 200 ns - 1450 nC - 13 A 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area. 3. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID025499 Rev 3 5/21 21 Electrical characteristics 2.1 STB24N60DM2, STP24N60DM2, STW24N60DM2 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK, TO-220 Figure 3. Thermal impedance D2PAK, TO-220 AM16164v1 a Op Lim era ite tion d by in th m is ax ar R e DS 10 (o n) is ID (A) 10µs 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 AM16165v1 n) 10µs DS 10 (o Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 100µs 1ms 1 Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM16166v1 ID (A) VGS= 8, 9, 10 V VGS= 7 V 40 40 35 35 30 30 25 VGS= 6 V 20 20 15 10 VGS= 5 V 5 5 VGS= 4 V 0 0 6/21 VDS= 17 V 25 15 10 AM16167v1 ID (A) 5 10 15 20 0 VDS(V) DocID025499 Rev 3 0 2 4 6 8 10 VGS(V) STB24N60DM2, STP24N60DM2, STW24N60DM2 Figure 8. Gate charge vs gate-source voltage AM16168v1 VDS VGS (V) 12 VDS VDS Figure 9. Static drain-source on-resistance VDD=480 V (V) RDS(on) (Ω) 0.186 ID=18 A 500 0.184 10 400 AM16169v1 VGS=10V 0.182 0.180 8 300 6 0.178 0.176 200 4 100 2 0 Electrical characteristics 0.174 0.172 0.170 0 5 10 15 20 25 30 0 35 Qg(nC) Figure 10. Capacitance variations 0 2 4 6 8 10 12 14 16 ID(A) Figure 11. Output capacitance stored energy AM15467v1 C (pF) 0.168 7 Ciss 1000 AM15472v1 Eoss (µJ) 8 6 5 100 4 Coss 3 10 2 1 Crss 1 0.1 1 10 100 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature AM15473v1 VGS(th) (norm) 0 0 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature AM15464v1 RDS(on) (norm) ID = 250 µA 1.1 2.3 ID = 9 A VGS = 10 V 2.1 1.0 1.9 1.7 0.9 1.5 1.3 0.8 1.1 0.9 0.7 0.7 0.6 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID025499 Rev 3 0 25 50 75 100 TJ(°C) 7/21 21 Electrical characteristics STB24N60DM2, STP24N60DM2, STW24N60DM2 Figure 14. Source-drain diode forward characteristics AM15468v1 VSD (V) 1.4 Figure 15. Normalized V(BR)DSS vs temperature AM15466v1 V(BR)DSS (norm) 1.11 ID = 1mA 1.09 1.2 TJ=-50°C 1.07 1 1.05 0.8 1.03 1.01 0.6 TJ=150°C TJ=25°C 0.4 0.97 0.2 0 8/21 0.99 0.95 0 2 4 6 8 10 12 14 16 ISD(A) 0.93 -50 -25 DocID025499 Rev 3 0 25 50 75 100 TJ(°C) STB24N60DM2, STP24N60DM2, STW24N60DM2 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID025499 Rev 3 10% AM01473v1 9/21 21 Package mechanical data 4 STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 DocID025499 Rev 3 STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data Figure 22. D²PAK (TO-263) drawing 0079457_T DocID025499 Rev 3 11/21 21 Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2 Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/21 Max. 0.4 0° 8° DocID025499 Rev 3 STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data Figure 23. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID025499 Rev 3 13/21 21 Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2 Figure 24. TO-220 type A drawing BW\SH$B5HYB7 14/21 DocID025499 Rev 3 STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID025499 Rev 3 15/21 21 Package mechanical data STB24N60DM2, STP24N60DM2, STW24N60DM2 Figure 25. TO-247 drawing 0075325_G 16/21 DocID025499 Rev 3 STB24N60DM2, STP24N60DM2, STW24N60DM2 Package mechanical data Table 11. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID025499 Rev 3 5.70 17/21 21 Packaging mechanical data 5 STB24N60DM2, STP24N60DM2, STW24N60DM2 Packaging mechanical data Figure 26. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 18/21 DocID025499 Rev 3 STB24N60DM2, STP24N60DM2, STW24N60DM2 Packaging mechanical data Figure 27. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID025499 Rev 3 Min. Max. 330 13.2 26.4 30.4 19/21 21 Revision history 6 STB24N60DM2, STP24N60DM2, STW24N60DM2 Revision history Table 13. Document revision history 20/21 Date Revision Changes 12-Nov-2013 1 First release. 17-Jan-2014 2 – Document status promoted from preliminary data to production data – Modified: dv/dt (peak diode recovery voltage slope) value in Table 2 – Modified: IAR value in Table 4 – Modified: IDSS and VGS(th) values in Table 5 – Minor text changes 03-Mar-2014 3 – Modified: IAR value in Table 4 – Added: note 1.: Limited by maximum junction temperature – Minor text changes DocID025499 Rev 3 STB24N60DM2, STP24N60DM2, STW24N60DM2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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