STW25N95K3

STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3™ Power MOSFET Features Type VDSS RDS(on) max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W ■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Zener-protected 2 3 1 TO-247 Application ■ Switching applications Figure 1. Internal schematic diagram Description D(2) This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order code Marking Package Packaging STW25N95K3 25N95K3 TO-247 Tube January 2012 Doc ID 15584 Rev 2 1/13 www.st.com 13 Contents STW25N95K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 9 Doc ID 15584 Rev 2 STW25N95K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate- source voltage Value Unit ± 30 V ID Drain current (continuous) at TC = 25 °C 22 A ID Drain current (continuous) at TC = 100 °C 13.9 A IDM (1) Drain current (pulsed) 88 A PTOT Total dissipation at TC = 25 °C 400 W IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 28 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 450 mJ 5 V/ns 6000 V -55 to 150 °C Value Unit 0.31 °C/W dv/dt(2) Peak diode recovery voltage slope VESD(G-S) G-S ESD (HBM C=100 pF; R=1.5 kΩ) TJ Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 22 A, di/dt ≤ 100 A/µs, peak VDS ≤V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Maximum lead temperature for soldering purpose 300 °C/W TJ Doc ID 15584 Rev 2 3/13 Electrical characteristics 2 STW25N95K3 Electrical characteristics (Tcase =25°C unless otherwise specified). Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 950 V IDSS Zero gate voltage VDS = Max rating drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) 10 µA 4 5 V 0.32 0.36 Ω Min. Typ. Max. Unit VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 150 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 11 A Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 15 V, ID = 11 A - 22 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 3680 246 2 - pF pF pF Co(tr)(2) Equivalent capacitance time related VDS = 0 to 760 V, VGS = 0 - 198 - pF Co(er)(3) Equivalent capacitance energy related VDS = 0 to 760 V, VGS = 0 - 278 - pF Rg Gate input resistance f=1 MHz open drain - 3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 760 V, ID = 22 A, VGS = 10 V (see Figure 16) - 105 23 57 - nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/13 Doc ID 15584 Rev 2 STW25N95K3 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 475 V, ID = 11 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Min. Typ. - 39 29 97 59 Max Unit - ns ns ns ns Max Unit - 22 88 A A 1.6 V Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Forward on voltage ISD = 22 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD= 60 V, TJ = 25 °C (see Figure 17) - 671 17 50 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 22 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 17) - 803 21 52 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) Min. Typ. 30 - Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 15584 Rev 2 5/13 Electrical characteristics STW25N95K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM03708v1 ID (A) 10µs D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 100 10 100µs 1ms 10ms Tj=150°C Tc=25°C 1 Sinlge pulse 0.1 0.1 Figure 4. 10 1 100 VDS(V) Output characteristics AM03709v1 ID (A) 40 AM03710v1 ID (A) VGS= 10V 40 35 VDS= 25 V 7V 30 30 25 20 20 15 10 6V 10 5 0 0 Figure 6. 0 20 10 VDS(V) Normalized BVDSS vs temperature AM03711v1 BVDSS (norm) 1.300 2 0 Figure 7. 4 6 8 10 12 14 16 VGS(V) Static drain-source on resistance AM03713v1 RDS(on) (Ω) 0.38 1.200 0.36 1.100 0.34 1.000 0.32 0.900 0.3 0.800 0.28 0.700 0.600 6/13 0.26 -50 0 50 100 150 TJ(°C) Doc ID 15584 Rev 2 2 4 6 8 10 12 14 16 18 20 ID(A) STW25N95K3 Figure 8. Electrical characteristics Output capacitance stored energy AM03714v1 Figure 9. Eoss (µJ) C (pF) 45 10000 Capacitance variations AM03712v1 40 Ciss 35 1000 30 25 100 20 15 10 Coss Crss 10 5 0 0 Figure 10. 100 200 300 400 500 600 700 800 VDS(V) 1 0.1 1 100 10 1000 VDS(V) Gate charge vs gate-source voltage Figure 11. Normalized on resistance vs temperature AM03719v1 VGS (V) 12 VDD=760V 0.9 ID=22A 0.8 10 8 AM03715v1 RDS(on) (norm) 3.0 0.7 2.5 0.6 2.0 0.5 6 0.4 4 0.3 1.5 1.0 0.2 2 0.1 0 5 0 10 15 20 0 0 25 Qg(nC) Figure 12. Normalized gate threshold voltage vs temperature AM03716v1 VGS(th) (norm) 1.40 0.5 -50 50 0 100 150 TJ(°C) Figure 13. Maximum avalanche energy vs temperature AM03717v1 EAS (mJ) IAR=28A 450 400 1.20 350 1.0 300 250 0.80 200 0.60 150 100 0.40 50 0.20 -50 0 50 100 150 TJ(°C) Doc ID 15584 Rev 2 0 0 20 40 60 80 100 120 140 TJ(°C) 7/13 Electrical characteristics STW25N95K3 Figure 14. Source-drain diode forward characteristics AM03718v1 VSD (V) 1.0 -50°C 0.90 25°C 0.80 150°C 0.70 0.60 0.50 0.40 0.30 8/13 0 5 10 15 20 ISD(A) Doc ID 15584 Rev 2 STW25N95K3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15584 Rev 2 10% AM01473v1 9/13 Package mechanical data 4 STW25N95K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 10/13 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 15584 Rev 2 5.70 STW25N95K3 Package mechanical data Figure 21. TO-247 drawing 0075325_G Doc ID 15584 Rev 2 11/13 Revision history 5 STW25N95K3 Revision history Table 10. 12/13 Document revision history Date Revision Changes 27-Apr-2009 1 First release. 09-Jan-2012 2 Document status promoted from preliminary data to datasheet. Updated Section 4: Package mechanical data. Doc ID 15584 Rev 2 STW25N95K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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