STW26N60M2

STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code STP26N60M2 STW26N60M2 1 TO-220 2 3 VDS @ TJmax RDS(on) max. ID PTOT 650 V 0.165 Ω 20 A 169 W 3 2 1 TO-247 Figure 1: Internal schematic diagram     Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications  Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Table 1: Device summary Order code STP26N60M2 STW26N60M2 March 2017 Marking 26N60M2 DocID028178 Rev 2 This is information on a product in full production. Package TO-220 TO-247 Packing Tube 1/16 www.st.com Contents STP26N60M2, STW26N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/16 4.1 TO-220 type A package information................................................ 11 4.2 TO-247 package information ........................................................... 13 Revision history ............................................................................ 15 DocID028178 Rev 2 STP26N60M2, STW26N60M2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 20 Drain current (continuous) at Tcase = 100 °C 13 IDM(1) Drain current (pulsed) 80 A PTOT W VGS ID Parameter Total dissipation at Tcase = 25 °C 169 dv/dt(2) Peak diode recovery voltage slope 15 dv/dt(3) MOSFET dv/dt ruggedness 50 Tstg Storage temperature range Tj -55 to 150 Operating junction temperature range A V/ns °C Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 20 A, di/dt=400 A/μs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS. (3) VDS ≤ 480 V. Table 3: Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient TO-247 0.74 62.5 50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 3.8 A EAS(2) Single pulse avalanche energy 250 mJ Notes: (1) Pulse width limited by Tjmax. (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V. DocID028178 Rev 2 3/16 Electrical characteristics 2 STP26N60M2, STW26N60M2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, Tcase = 125 °C(1) 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 10 A 0.14 0.165 Ω Min. Typ. Max. Unit - 1360 - - 88 - - 2 - IDSS Zero gate voltage drain current IGSS 2 µA Notes: (1)Defined by design, not subject to production test. Table 6: Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 124 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4 - Ω Qg Total gate charge - 34 - Qgs Gate-source charge - 5.6 - Qgd Gate-drain charge VDD = 480 V, ID = 20 A, VGS = 10 V (see Figure 17: "Test circuit for gate charge behavior") - 16.3 - VDS = 100 V, f = 1 MHz, VGS = 0 V pF nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) tr td(off) tf 4/16 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 10 A RG = 4.7 Ω, VGS = 10 V (see Figure 16: "Test circuit for resistive load switching times" and Figure 21: "Switching time waveform") DocID028178 Rev 2 Min. Typ. Max. - 20.2 - - 8 - - 66 - - 10 - Unit ns STP26N60M2, STW26N60M2 Electrical characteristics Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 20 A ISDM(1) Source-drain current (pulsed) - 80 A VSD(2) Forward on voltage VGS = 0 V, ISD = 20 A - 1.6 V trr Reverse recovery time - 360 ns Qrr Reverse recovery charge - 5 µC IRRM Reverse recovery current ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 27 A ISD = 20 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 556 ns - 8 µC - 29 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID028178 Rev 2 5/16 Electrical characteristics 2.1 6/16 STP26N60M2, STW26N60M2 Electrical characteristics (curves) Figure 2: Safe operating area for TO-220 Figure 3: Thermal impedance for TO-220 Figure 4: Safe operating area for TO-247 Figure 5: Thermal impedance for TO-247 Figure 6: Output characteristics Figure 7: Transfer characteristics DocID028178 Rev 2 STP26N60M2, STW26N60M2 Electrical characteristics Figure 8: Gate charge vs gate-source voltage Figure 9: Static drain-source on-resistance Figure 10: Capacitance variations Figure 11: Normalized gate threshold voltage vs temperature Figure 12: Normalized on-resistance vs temperature Figure 13: Normalized V(BR)DSS vs temperature DocID028178 Rev 2 7/16 Electrical characteristics STP26N60M2, STW26N60M2 Figure 14: Output capacitance stored energy 8/16 Figure 15: Source-drain diode forward characteristics DocID028178 Rev 2 STP26N60M2, STW26N60M2 3 Test circuits Test circuits Figure 17: Test circuit for gate charge behavior Figure 16: Test circuit for resistive load switching times Figure 18: Test circuit for inductive load switching and diode recovery times Figure 19: Unclamped inductive load test circuit Figure 20: Unclamped inductive waveform DocID028178 Rev 2 Figure 21: Switching time waveform 9/16 Package information 4 STP26N60M2, STW26N60M2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/16 DocID028178 Rev 2 STP26N60M2, STW26N60M2 4.1 Package information TO-220 type A package information Figure 22: TO-220 type A package outline DocID028178 Rev 2 11/16 Package information STP26N60M2, STW26N60M2 Table 9: TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 12/16 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID028178 Rev 2 STP26N60M2, STW26N60M2 4.2 Package information TO-247 package information Figure 23: TO-247 package outline 0075325_8 DocID028178 Rev 2 13/16 Package information STP26N60M2, STW26N60M2 Table 10: TO-247 package mechanical data mm Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 14/16 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID028178 Rev 2 3.65 5.50 5.50 5.70 STP26N60M2, STW26N60M2 5 Revision history Revision history Table 11: Document revision history Date Revision Changes 03-Aug-2015 1 First release. 08-Mar-2017 2 Updated Table 2: "Absolute maximum ratings", Table 3: "Thermal data" and Figure 10: "Capacitance variations". Minor text changes. DocID028178 Rev 2 15/16 STP26N60M2, STW26N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 16/16 DocID028178 Rev 2