STW27NM60ND

STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.13 Ω, 21 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages Datasheet - production data Features Order codes VDS@ Tjmax RDS(on) max ID 650 V 0.16 Ω 21 A STB27NM60ND TAB STW27NM60ND 3 2 1 • Designed for automotive applications and AEC-Q101 qualified 3 1 D2PAK • The worldwide best RDS(on)*area amongst the fast recovery diode devices TO-247 • 100% avalanche tested • Low input capacitance and gate charge Figure 1. Internal schematic diagram • Low gate input resistance • Extremely high dv/dt and avalanche capabilities $4!" Applications • Switching applications ' Description 3 !-V These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging STB27NM60ND 27NM60ND D²PAK Tape and reel STW27NM60ND 27NM60ND TO-247 Tube October 2013 This is information on a product in full production. DocID15406 Rev 4 1/19 www.st.com Contents STB27NM60ND, STW27NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DocID15406 Rev 4 STB27NM60ND, STW27NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 21 A ID Drain current (continuous) at TC = 100 °C 13 A Drain current (pulsed) 84 A Total dissipation at TC = 25 °C 160 W Peak diode recovery voltage slope 40 V/ns –55 to 150 °C 150 °C IDM (1) PTOT dv/dt(2) Tstg Storage temperature TJ Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 21 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-ambient max D²PAK TO-247 0.78 °C/W 50 30 Unit °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 10 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 850 mJ DocID15406 Rev 4 3/19 19 Electrical characteristics 2 STB27NM60ND, STW27NM60ND Electrical characteristics (TCASE=25 °C unless otherwise specified). Table 5. On/off states Value Symbol Parameter Test conditions Unit Min. V(BR)DSS dv/dt(1) Drain-source breakdown voltage ID = 1 mA, VGS = 0 Drain source voltage slope VDD= 480 V, ID= 21 A, VGS= 10 V Typ. Max. 600 V 48 VDS = 600 V V/ns 1 µA VDS = 600 V @TC= 125 °C 100 µA Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 10.5 A 0.13 0.16 Ω Min. Typ. Max. Unit - 17 - S - 2400 - pF - 150 - pF - 15 - pF - 320 - pF - 60 - ns - 30 - ns - 50 - ns - 40 - ns IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 1. Characteristic value at turn off on inductive load. Table 6. Dynamic Symbol gfs (1) Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss (2) td(on) tr td(off) tf Test conditions Forward transconductance Ciss eq. 4/19 Parameter Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, ID = 10.5 A VDS = 50 V, f = 1 MHz, VGS = 0 VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 10.5 A RG = 4.7 Ω VGS = 10 V (see Figure 21), (see Figure 16) DocID15406 Rev 4 STB27NM60ND, STW27NM60ND Electrical characteristics Table 6. Dynamic (continued) Symbol Parameter Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance Test conditions Min. Typ. Max. Unit VDD = 480 V, ID = 21 A, VGS = 10 V, (see Figure 17) - 80 - nC - 15 - nC - 40 - nC f = 1 MHz, gate DC Bias = 0, test signal level = 20 mV, ID = 0 - 1.6 - Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS DocID15406 Rev 4 5/19 19 Electrical characteristics STB27NM60ND, STW27NM60ND Table 7. Source drain diode Symbol Parameter Test conditions Typ. Max. Unit Source-drain current - 21 A ISDM (1) Source-drain current (pulsed) - 84 A VSD (2) Forward on voltage - 1.3 V ISD ISD = 21 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 21 A, VDD = 60 V di/dt=100 A/µs (see Figure 18) ISD = 21 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 18) 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 6/19 Min. DocID15406 Rev 4 - 160 ns - 1 µC - 15 A - 230 ns - 2 µC - 19 A STB27NM60ND, STW27NM60ND 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK Figure 3. Thermal impedance for D²PAK Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 Figure 6. Output characteristics Figure 7. Transfer characteristics DocID15406 Rev 4 7/19 19 Electrical characteristics STB27NM60ND, STW27NM60ND Figure 8. Transconductance Figure 9. Static drain-source on-resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature 8/19 DocID15406 Rev 4 STB27NM60ND, STW27NM60ND Electrical characteristics Figure 14. Source-drain diode forward characteristics Figure 15. Normalized V(BR)DSS vs temperature DocID15406 Rev 4 9/19 19 Test circuits 3 STB27NM60ND, STW27NM60ND Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 10/19 0 DocID15406 Rev 4 10% AM01473v1 STB27NM60ND, STW27NM60ND 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID15406 Rev 4 11/19 19 Package mechanical data STB27NM60ND, STW27NM60ND Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/19 Max. 0.4 0° 8° DocID15406 Rev 4 STB27NM60ND, STW27NM60ND Package mechanical data Figure 22. D²PAK (TO-263) drawing 0079457_T Figure 23. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID15406 Rev 4 13/19 19 Package mechanical data STB27NM60ND, STW27NM60ND Table 9. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/19 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID15406 Rev 4 5.70 STB27NM60ND, STW27NM60ND Package mechanical data Figure 24. TO-247 drawing 0075325_G DocID15406 Rev 4 15/19 19 Packing mechanical data 5 STB27NM60ND, STW27NM60ND Packing mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 16/19 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID15406 Rev 4 Min. Max. 330 13.2 26.4 30.4 STB27NM60ND, STW27NM60ND Packing mechanical data Figure 25. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 26. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID15406 Rev 4 17/19 19 Revision history 6 STB27NM60ND, STW27NM60ND Revision history Table 11. Document revision history Date Revision 02-Mar-2009 1 First release. 08-Mar-2011 2 Document status promoted from preliminary data to datasheet. 3 Inserted new device in D2PAK. Updated Table 1: Device summary, Table 3: Thermal data, Section 3: Test circuits and Section 4: Package mechanical data Inserted Section 5: Packing mechanical data. – Minor text changes. 4 – Updated: title and features in cover page – Updated: Section 4: Package mechanical data and Section 5: Packing mechanical data – Minor text changes 28-Nov-2011 31-Oct-2013 18/19 Changes DocID15406 Rev 4 STB27NM60ND, STW27NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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