STB28N60DM2, STP28N60DM2,
STW28N60DM2
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
Order code
VDS @
TJmax.
RDS(on)
max.
ID
PTOT
600 V
0.16 Ω
21 A
170 W
STB28N60DM2
STP28N60DM2
STW28N60DM2
Figure 1: Internal schematic diagram
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
These high voltage N-channel Power MOSFETs
are part of the MDmesh™ DM2 fast recovery
diode series. They offer very low recovery charge
(Qrr) and time (trr) combined with low RDS(on),
rendering them suitable for the most demanding
high efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
STB28N60DM2
STP28N60DM2
28N60DM2
STW28N60DM2
December 2015
DocID027040 Rev 4
This is information on a product in full production.
Package
Packing
D²PAK
Tape and reel
TO-220
Tube
TO-247
Tube
1/20
www.st.com
Contents
STB28N60DM2, STP28N60DM2, STW28N60DM2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package information ..................................................................... 10
5
2/20
4.1
D²PAK (TO-263) type A package information ................................. 10
4.2
D²PAK packing information ............................................................. 13
4.3
TO-220 type A package information................................................ 15
4.4
TO-247 package information ........................................................... 17
Revision history ............................................................................ 19
DocID027040 Rev 4
STB28N60DM2, STP28N60DM2, STW28N60DM2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at Tcase = 25 °C
21
Drain current (continuous) at Tcase = 100 °C
14
IDM(1)
Drain current (pulsed)
84
A
PTOT
W
VGS
ID
A
Total dissipation at Tcase = 25 °C
170
dv/dt(2)
Peak diode recovery voltage slope
50
dv/dt(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
Tj
V/ns
-55 to 150
Operating junction temperature
°C
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
ISD ≤ 21 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V
(3)
VDS ≤ 480 V.
Table 3: Thermal data
Value
Symbol
Parameter
Unit
D²PAK
Rthj-case
Rthj-pcb
(1)
Rthj-amb
Thermal resistance junction-case
Thermal resistance junction-pcb
TO-220
TO-247
0.74
30
Thermal resistance junction-ambient
°C/W
62.5
50
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics
Symbol
Parameter
IAR(1)
Avalanche current, repetitive or not repetitive
EAS(2)
Single pulse avalanche energy
Value
Unit
4
A
350
mJ
Notes:
(1)
pulse width limited by Tjmax
(2)
starting Tj = 25 °C, ID = IAR, VDD = 50 V.
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Electrical characteristics
2
STB28N60DM2, STP28N60DM2, STW28N60DM2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 10.5 A
0.13
0.16
Ω
Min.
Typ.
Max.
Unit
-
1500
-
-
70
-
-
1.6
-
IDSS
Zero gate voltage drain
current
IGSS
3
µA
Table 6: Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
134
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.6
-
Ω
Qg
Total gate charge
-
34
-
Qgs
Gate-source charge
-
8
-
Qgd
Gate-drain charge
VDD = 480 V, ID = 21 A,
VGS = 10 V (see Figure 19:
"Test circuit for gate charge
behavior")
-
18.5
-
VDS = 100 V, f = 1 MHz,
VGS = 0 V
pF
nC
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
4/20
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
VDD = 300 V, ID = 10.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 18: "Test circuit for
resistive load switching times"
and Figure 23: "Switching time
waveform")
DocID027040 Rev 4
Typ.
Max.
-
16
-
-
7.3
-
-
53
-
-
9.3
-
Unit
ns
STB28N60DM2, STP28N60DM2, STW28N60DM2
Electrical characteristics
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
ISD(1)
Source-drain current
ISDM(2)
Source-drain current
(pulsed)
VSD(3)
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Min.
Typ.
Max.
Unit
-
21
A
-
84
A
VGS = 0 V, ISD = 21 A
-
1.6
V
ISD = 21 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 20:
"Test circuit for inductive load
switching and diode recovery
times")
-
140
ns
-
0.5
µC
-
7.4
A
ISD = 21 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 20: "Test circuit for
inductive load switching and
diode recovery times")
-
309
ns
-
2.6
µC
-
16.8
A
Notes:
(1)
Limited by maximum junction temperature.
(2)
Pulse width is limited by safe operating area.
(3)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Table 9: Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)GSO
Gate-source breakdown voltage
IGS = ±250 µA, ID = 0 A
±30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID027040 Rev 4
5/20
Electrical characteristics
2.1
STB28N60DM2, STP28N60DM2, STW28N60DM2
Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK
Figure 3: Thermal impedance for D²PAK
K
δ=0.5
0.2
0.1
10 -1 0.05
0.02
Zth= K*Rthj-c
δ= tp/Ƭ
0.01
Single pulse
10 -2
10 -5
Figure 4: Safe operating area for TO-220
10
-4
10
tp
-3
10
-2
Ƭ
10 -1
t P (s)
Figure 5: Thermal impedance for TO-220
K
δ=0.5
0.2
0.1
10 -1 0.05
0.02
Zth= K*Rthj-c
δ= tp/Ƭ
0.01
Single pulse
10
10 -5
Figure 6: Safe operating area for TO-247
6/20
DocID027040 Rev 4
tp
Ƭ
-2
10 -4
10 -3
10 -2
10 -1
t P (s)
Figure 7: Thermal impedance for TO-247
STB28N60DM2, STP28N60DM2, STW28N60DM2
Electrical characteristics
Figure 8: Output characteristics
Figure 9: Transfer characteristics
Figure 10: Gate charge vs gate-source
voltage
Figure 11: Static drain-source on-resistance
Figure 12: Capacitance variations
Figure 13: Normalized gate threshold voltage
vs temperature
DocID027040 Rev 4
7/20
Electrical characteristics
8/20
STB28N60DM2, STP28N60DM2, STW28N60DM2
Figure 14: Normalized on-resistance vs
temperature
Figure 15: Normalized V(BR)DSS vs
temperature
Figure 16: Output capacitance stored energy
Figure 17: Source-drain diode forward
characteristics
DocID027040 Rev 4
STB28N60DM2, STP28N60DM2, STW28N60DM2
3
Test circuits
Test circuits
Figure 19: Test circuit for gate charge
behavior
Figure 18: Test circuit for resistive load
switching times
Figure 20: Test circuit for inductive load
switching and diode recovery times
Figure 21: Unclamped inductive load test
circuit
Figure 22: Unclamped inductive waveform
DocID027040 Rev 4
Figure 23: Switching time waveform
9/20
Package information
4
STB28N60DM2, STP28N60DM2, STW28N60DM2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
D²PAK (TO-263) type A package information
Figure 24: D²PAK (TO-263) type A package outline
0079457_A_rev22
10/20
DocID027040 Rev 4
STB28N60DM2, STP28N60DM2, STW28N60DM2
Package information
Table 10: D²PAK (TO-263) type A package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
DocID027040 Rev 4
8°
11/20
Package information
STB28N60DM2, STP28N60DM2, STW28N60DM2
Figure 25: D²PAK (TO-263) recommended footprint (dimensions are in mm)
12/20
DocID027040 Rev 4
STB28N60DM2, STP28N60DM2, STW28N60DM2
4.2
Package information
D²PAK packing information
Figure 26: Tape outline
DocID027040 Rev 4
13/20
Package information
STB28N60DM2, STP28N60DM2, STW28N60DM2
Figure 27: Reel outline
Table 11: D²PAK tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
14/20
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027040 Rev 4
Min.
Max.
330
13.2
26.4
30.4
STB28N60DM2, STP28N60DM2, STW28N60DM2
4.3
Package information
TO-220 type A package information
Figure 28: TO-220 type A package outline
DocID027040 Rev 4
15/20
Package information
STB28N60DM2, STP28N60DM2, STW28N60DM2
Table 12: TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/20
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID027040 Rev 4
STB28N60DM2, STP28N60DM2, STW28N60DM2
4.4
Package information
TO-247 package information
Figure 29: TO-247 package outline
DocID027040 Rev 4
17/20
Package information
STB28N60DM2, STP28N60DM2, STW28N60DM2
Table 13: TO-247 package mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
18/20
Typ.
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
DocID027040 Rev 4
3.65
5.50
5.50
5.70
STB28N60DM2, STP28N60DM2, STW28N60DM2
5
Revision history
Revision history
Table 14: Document revision history
Date
Revision
Changes
21-Oct-2014
1
First release.
05-Oct-2015
2
Text and formatting changes throughout document
On cover page:
- upated title and Features table
In section Electrical ratings:
- updated all table data
In section Electrical characteristics:
- updated all table data
- renamed table Static (was On /off states)
- added table Gate-source Zener diode
Added section Electrical characteristics (curves)
Updated and renamed section Package mechanical data (was
Package information)
Datasheet promoted from preliminary to production data
30-Oct-2015
3
Minor text changes in Section 2.1: "Electrical characteristics
(curves)".
09-Dec-2015
4
Updated features and Table 1: "Device summary".
DocID027040 Rev 4
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STB28N60DM2, STP28N60DM2, STW28N60DM2
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DocID027040 Rev 4