STW28NK60Z

STW28NK60Z N-CHANNEL 600 V - 0.155Ω - 27A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE STW28NK60Z s s s s s s Figure 1: Package ID 27 A PW 350 W VDSS 600 V RDS(on) < 0.185 Ω TYPICAL RDS(on) = 0.155 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MSmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES s WELDING MACHINES s LIGHTING Figure 2: Internal Schematic Diagram Table 2: Order Codes PART NUMBER STW28NK60Z MARKING W28NK60Z PACKAGE TO-247 PACKAGING TUBE Rev. 1 November 2004 1/10 STW28NK60Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM(*) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 KΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 600 600 ± 30 27 17 108 350 2.77 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C (*) Pulse width limited by safe operating area (1) ISD≤ 27 A, di/dt≤ 200 A/µs, VDD≤ V(BR)DSS, T J≤ TJMAX Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.36 50 300 °C/W °C/W °C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 27 500 Unit A mJ Table 6: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Condition Min. 30 Typ. Max Unit A Igs= ± 1mA (Open Drain) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10 STW28NK60Z TABLE 7: ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125°C VGS = ± 20 V VDS = VGS, ID = 150 µA VGS = 10 V, ID = 13.5 A 3 3.75 0.155 Min. 600 1 50 ± 10 4.5 0.185 Typ. Max. Unit S µA µA µA V Ω Table 8: Dynamic Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 13.5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 26 6350 615 125 50 45 135 32 189 34 103 264 Max. Unit S pF pF pF ns ns ns ns nC nC nC VDD = 300 V, ID = 14 A, RG = 4.7 Ω, VGS = 10 V (Resistive Load see Figure 17)) VDD = 480 V, ID = 28 A, VGS = 10 V Table 9: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 27 A, VGS = 0 ISD = 28 A, di/dt = 100 A/µs VDD = 35V, Tj = 25°C (see test circuit Figure 5) ISD = 28 A, di/dt = 100 A/µs VDD = 35V, Tj = 150°C (see test circuit Figure 5) 820 10 23.5 1020 14 27.5 Test Conditions Min. Typ. Max. 27 108 1.6 Unit A A V ns µC A ns µC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/10 STW28NK60Z Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/10 STW28NK60Z Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics Figure 14: Normalized BVDSS vs Temperature 5/10 STW28NK60Z Figure 15: Maximum Avalanche Energy vs Temperature 6/10 STW28NK60Z Figure 16: Unclamped Inductive Load Test Circuit Figure 19: Unclamped Inductive Wafeform Figure 17: Switching Times Test Circuit For Resistive Load Figure 20: Gate Charge Test Circuit Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/10 STW28NK60Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 8/10 STW28NK60Z Table 10: Revision History Date 05-Nov-2004 Revision 1 First Release. Description of Changes 9/10 STW28NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10