STW30NM60ND

STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND VDSS 600V 600V 600V 600V 600V RDS(on) Max < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω < 0.13Ω ID 25A 25A 25A(1) 25A 25A 3 3 1 2 3 1 2 1 TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ The world’s best RDS(on)*in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1. 3 12 2 1 3 I2PAK TO-247 Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND November 2007 Marking 30NM60ND 30NM60ND 30NM60ND 30NM60ND 30NM60ND Rev 1 Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Tube 1/15 www.st.com 15 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220/D2PAK I2PAK / TO-247 600 ±30 25 15.75 100 190 1.51 40 -–55 to 150 150 2500 25 (1) Unit TO-220FP V V A A A W W/°C V/ns V VDS VGS ID ID IDM (2) Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 15.75(1) 100(1) 40 0.24 PTOT dv/dt(3) Viso Tstg TJ Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Storage temperature Max. operating junction temperature °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 25A, di/dt ≤ 600A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter TO-220 TO-247 TO-220FP D²PAK/I²PAK 0.66 62.5 50 300 3.1 62.5 Unit °C/W °C/W °C Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) Max value TBD TBD Unit A mJ 3/15 Electrical characteristics STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Value Parameter Drain-source breakdown voltage Drain source voltage slope Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. V 48 1 10 100 3 4 0.11 5 0.13 V/ns µA µA nA V Ω Unit V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on) ID = 1mA, VGS = 0 VDD= 480V, ID= 25A, VGS= 10V VDS = Max rating VDS = Max rating @125°C VGS = ± 20V VDS = VGS, ID = 250 µA VGS = 10V, ID = 12.5 A 600 1. Characteristic value at turn off on inductive load Table 6. Symbol gfs (1) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 15 V, ID = 12.5 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 480V VDD =300 V, ID = 12.5A RG = 4.7Ω VGS = 10V (see Figure 7), (see Figure 2) VDD = 480V, ID = 25A, VGS = 10V, (see Figure 3) f=1MHz Gate DC Bias=0 Test signal level=20mV Open drain Min. Typ. TBD 3000 600 90 TBD TBD TBD TBD TBD 100 TBD TBD 1.6 Max. Unit S pF pF pF Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Rg pF ns ns ns ns nC nC nC Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25A, VGS = 0 ISD = 25A, VDD = 60V di/dt=100A/µs (see Figure 4) ISD = 25A,VDD = 60V di/dt=100A/µs, TJ = 150°C (see Figure 4) TBD TBD TBD TBD TBD TBD Test conditions Min. Typ. Max. 25 100 1.6 Unit A A V ns µC A ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 5/15 Test circuit STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND 3 Figure 2. Test circuit Switching times test circuit for resistive load Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 6/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/15 Package mechanical data STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 8/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Package mechanical data TO-220FP mechanical data mm. Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 Typ. Max. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Ø A B L3 L6 L7 F1 F D G1 E H F2 L2 L5 123 L4 G 9/15 Package mechanical data STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND TO-262 (I2PAK) mechanical data mm. DIM. Min. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ. Max. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 10/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Package mechanical data D²PAK mechanical data mm Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0° 4° 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.50 0.055 0.094 10.4 0.393 Typ Max 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 Min 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 inch Typ Max 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.409 0.334 0.208 0.625 0.55 0.68 0.126 0.015 11/15 Package mechanical data STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 øP øR S 12/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Packing mechanical data 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 13/15 Revision history STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND 6 Revision history Table 8. Date 06-Nov-2007 Document revision history Revision 1 initial release. Changes 14/15 STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15