STW32N65M5

STB32N65M5 Datasheet N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFET in D²PAK package Features TAB 2 3 1 D²PAK Order codes VDS at Tjmax. RDS(on) max. ID STB32N65M5 710 V 119 mΩ 24 A • Extremely low RDS(on) • • • Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Applications D(2, TAB) • Switching applications Description G(1) S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link STB32N65M5 Product summary Order code STB32N65M5 Marking 32N65M5 Package D2PAK Packing Tape and reel DS6032 - Rev 5 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB32N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 24 A ID Drain current (continuous) at TC = 100 °C 15 A IDM (1) Drain current (pulsed) 96 A PTOT Total power dissipation at TC = 25 °C 150 W Peak diode recovery voltage slope 15 V/ns -55 to 150 °C Value Unit VGS dv/dt (2) Tj Tstg Parameter Operating junction temperature range Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 24 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.83 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 30 °C/W Value Unit 8 A 650 mJ 1. When mounted on FR-4 board of 1 inch², 2oz Cu. Table 3. Avalanche characteristics Symbol DS6032 - Rev 5 Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/17 STB32N65M5 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 V Min. Typ. V 1 µA 100 µA ±100 nA 4 5 V 95 119 mΩ Typ. Max. Unit - pF VDS = 650 V, VGS = 0 V, Zero gate voltage drain current TC = 125 °C (1) IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 12 A Unit 650 VDS = 650 V, VGS = 0 V, IDSS Max. 3 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Ciss Parameter Output capacitance Crss Reverse transfer capacitance Co(er) (2) Min. Input capacitance Coss Co(tr) (1) Test conditions 3320 VDS = 100 V, f = 1 MHz, VGS = 0 V 75 5 Equivalent capacitance time related Equivalent capacitance energy related - VGS = 0 V, VDS = 0 to 520 V Rg Gate input resistance f = 1 MHz, ID= 0 A Qg Total gate charge VDD = 520 V, ID = 12 A, Qgs Gate-source charge Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 15. Test circuit for gate charge behavior) - 210 - pF - 70 - pF - 2 - Ω - nC 72 - 17 29 1. Co(tr) time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. Co(er) energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(off) Test conditions Min. Typ. Turn-off delay time VDD = 400 V, ID = 15 A, 53 Rise time RG = 4.7 Ω, VGS = 10 V 12 tc Cross time tf Fall time (see Figure 16. Test circuit for inductive load switching and diode recovery times and Figure 19. Switching time waveform) tr DS6032 - Rev 5 Parameter - 29 Max. Unit - ns 16 page 3/17 STB32N65M5 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Source-drain current Min. Typ. 24 - ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 24 A, VGS = 0 V trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 16. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 24 A, di/dt = 100 A/µs Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C IRRM Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) 96 - - - Max. 1.5 Unit A V 375 ns 6 µC 33 A 440 ns 8 µC 36 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6032 - Rev 5 page 4/17 STB32N65M5 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 2. Thermal impedance Figure 1. Safe operating area AM05448v1 K GC20540_ZTH δ=0.5 on ) δ=0.2 S( O p Li e ra m ite tio n d by in t m h is ax a R D re a is ID (A) 10 0.1 10µs 100µs 0.02 1ms 1 Single pulse S inlge puls e 10 1 0.01 10ms Tj=150°C Tc=25°C 0.1 0.1 0.05 10 -1 10 VDS (V) 100 -2 10-5 Figure 3. Output characterisics 10-3 10 -2 10 -1 tp(s) Figure 4. Transfer characteristics AM05451v1 ID 10-4 AM05452v1 ID (A) VGS =10V VDS =20V 50 40 30 30 20 20 10 10 0 10 0 30 VDS Figure 5. Gate charge vs gate-source voltage AM05457v1 VGS VDD=520V 12 DS VDS 480 ID=12A 10 0 0 2 4 8 6 10 VGS (V) Figure 6. Static drain-source on resistance AM05454v1 R DS (on) (Ω) 0.111 0.091 3 8 0.071 6 0.051 4 80 2 0 DS6032 - Rev 5 0 20 40 60 80 Qg 0.031 0.011 0 5 10 15 ID(A) page 5/17 STB32N65M5 Electrical characteristics curves Figure 7. Capacitance variations Figure 8. Output capacitance stored energy AM05455v1 C (pF) AM05456v1 E os s (µJ ) 14 10000 Cis s 12 10 1000 8 100 Cos s 6 4 10 Crs s 1 0.1 1 100 10 VDS (V) Figure 9. Normalized gate threshold voltage vs temperature VGS (th) (norm) 1.10 AM05459v1 ID = 250 μA 2 0 0 100 200 300 400 500 600 VDS (V) Figure 10. Normalized on resistance vs temperature AM05460v1 R DS (on) (norm) 2.1 1.9 VGS = 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 25 0 50 75 100 TJ (°C) Figure 11. Source-drain diode forward characteristics AM05461v1 VS D (V) 0.5 -50 -25 0 25 50 75 100 TJ (°C) Figure 12. Normalized V(BR)DSS vs temperature AM05453v1 V(BR)DSS TJ =-50°C 1.2 1.0 ID = 1 mA 1.03 0.8 TJ =25°C 0.6 0.99 TJ =150°C 0.4 0.97 0.2 0 DS6032 - Rev 5 1.01 0.95 0 10 20 30 40 50 IS D(A) 3 -50 0 TJ page 6/17 STB32N65M5 Electrical characteristics curves Figure 13. Switching energy vs gate resistance E μJ ) 400 AM05458v1 ID=15A VCL=400V VGS =10V Eon 300 Eoff 200 100 0 0 10 20 30 40 R G (Ω * Eon including reverse recovery of a SiC diode. DS6032 - Rev 5 page 7/17 STB32N65M5 Test circuits 3 Test circuits Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A B L A B 3.3 µF D G + VD 100 µH fast diode B Figure 17. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Unclamped inductive waveform V(BR)DSS Figure 19. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay -off IDM Vgs 90%Vgs on ID Vgs(I(t )) VDD VDD 10%Vds 10%Id Vds Trise AM01472v1 DS6032 - Rev 5 Tfall Tcross --over AM05540v2 page 8/17 STB32N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6032 - Rev 5 page 9/17 STB32N65M5 D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 20. D²PAK (TO-263) type A package outline 0079457_25 DS6032 - Rev 5 page 10/17 STB32N65M5 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS6032 - Rev 5 Typ. 0.40 0° 8° page 11/17 STB32N65M5 D²PAK (TO-263) type A package information Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS6032 - Rev 5 page 12/17 STB32N65M5 D²PAK packing information 4.2 D²PAK packing information Figure 22. D²PAK tape outline DS6032 - Rev 5 page 13/17 STB32N65M5 D²PAK packing information Figure 23. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS6032 - Rev 5 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 14/17 STB32N65M5 Revision history Table 10. Document revision history Date Version Changes 16-Jan-2009 1 First release 01-Sep-2009 2 Document status promoted from preliminary data to datasheet. 30-Sep-2009 3 Corrected VGS value on Table 2: Absolute maximum ratings Co(er) and Co(tr) values changed in Table 5: Dynamic Table 6: Switching times parameters updates Figure 24: Switching time waveform has been corrected Minor text changes Section 4: Package mechanical data has been modified. Added: – Table 8: D²PAK (TO-263) mechanical data, Figure 25: D²PAK (TO-263) drawing and Figure 26: D²PAK footprint; 06-Oct-2011 4 – Table 9: TO-220FP mechanical data, and Figure 27: TO-220FP drawing; – Table 10: I²PAK (TO-262) mechanical data, and Figure 28: I²PAK (TO-262) drawing; – Table 11: TO-220 type A mechanical data, and Figure 29: TO-220 type A drawing; – Table 12: TO-247 mechanical data, and Figure 30: TO-247 drawing; Section 5: Packaging mechanical data has been modified. Added: – Table 13: D²PAK (TO-263) tape and reel mechanical data, Figure 31: Tape and Figure 32: Reel; 02-Nov-2018 5 The part numbers STF32N65M5, STI32N65M5, STP32N65M5, STW32N65M5 have been moved to a separate datasheet. Content reworked to improve readability, no technical changes. DS6032 - Rev 5 page 15/17 STB32N65M5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS6032 - Rev 5 page 16/17 STB32N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6032 - Rev 5 page 17/17