STB32NM50N, STF32NM50N,
STP32NM50N, STW32NM50N
N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220, TO-247 packages
Datasheet — production data
Features
TAB
Order codes
VDS
RDS(on)
max.
PTOT
ID
2
3
1
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
500 V
0.13 Ω
190 W
35 W
190 W
190 W
22 A
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
3
D²PAK
1
2
TO-220FP
TAB
3
1
2
2
3
1
TO-220
TO-247
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$OR4!"
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
'
3
!-V
Table 1.
Device summary
Order codes
STB32NM50N
STF32NM50N
STP32NM50N
STW32NM50N
Marking
Package
Packaging
32NM50N
D2PAK
TO-220FP
TO-220
TO-247
Tape and reel
Tube
Tube
Tube
August 2012
This is information on a product in full production.
Doc ID 023436 Rev 1
1/21
www.st.com
21
Contents
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
.............................................. 9
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
D²PAK, TO-220,
TO-247
TO-220FP
VDS
Drain-source voltage
500
VGS
Gate- source voltage
± 25
V
V
(1)
ID
Drain current (continuous) at TC = 25 °C
22
ID
Drain current (continuous) at TC = 100 °C
13.86
13.86 (1)
A
Drain current (pulsed)
88
88
A
Total dissipation at TC = 25 °C
190
35
W
IDM
(2)
PTOT
22
A
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max)
7
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
340
mJ
Peak diode recovery voltage slope
15
V/ns
dv/dt(3)
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
TJ
2500
V
- 55 to 150
°C
Max. operating junction temperature
150
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3.
ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD ≤ 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb
Rthj-pcb(1)
1.
D²PAK TO-220FP TO-220 TO-247 Unit
0.66
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
3.6
0.66
62.5
50
°C/W
30
When mounted on FR-4 board of 1 inch², 2 oz Cu.
Doc ID 023436 Rev 1
3/21
Electrical characteristics
2
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Value
Symbol
Parameter
Test conditions
Unit
Min.
Drain-source
V(BR)DSS breakdown voltage
(VGS = 0)
ID = 1 mA
Typ.
Max.
500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 500 V
VDS = 500 V, TC = 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 11 A
0.1
0.13
Ω
Table 5.
Symbol
2
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1973
179
9.7
-
pF
pF
pF
Coss eq.(1)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 400 V
-
325
-
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =250 V, ID = 11 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 23),
(see Figure 18)
-
21.5
9.5
110
23.6
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 22 A,
VGS = 10 V,
(see Figure 19)
-
62.5
8.6
33
-
nC
nC
nC
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
-
3.8
-
Ω
Ciss
Coss
Crss
Rg
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/21
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Table 6.
Symbol
Electrical characteristics
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
22
88
A
A
1.6
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 22 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 20)
-
328
5
30.5
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 20)
-
392
6.5
32.8
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Doc ID 023436 Rev 1
5/21
Electrical characteristics
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D2PAK and Figure 3.
TO-220
Thermal impedance for for D2PAK
and TO-220
AM13087v1
ID
(A)
ai
DS
(o
Op
Lim erat
ite ion
d b in
y m this
ax ar
R e
n)
s
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1ms
10ms
1
0.1
0.1
Figure 4.
10
1
100
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-247
on
)
is
Tj=150°C
Tc=25°C
Single pulse
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
1
Figure 5.
AM13088v1
ID
(A)
10
VDS(V)
10µs
100µs
1ms
10ms
0.1
0.01
0.1
Figure 6.
10
1
100
Safe operating area for TO-247
AM13089v1
ID
(A)
10µs
DS
(o
n)
a
is
Tj=150°C
Tc=25°C
Single pulse
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
10
VDS(V)
100µs
1ms
10ms
1
0.1
0.1
6/21
1
10
100
VDS(V)
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 8.
Output characteristics
Figure 9.
AM13090v1
ID (A)
Electrical characteristics
Transfer characteristics
AM13091v1
ID(A)
VGS=10V
VDS=21V
60
60
6V
50
50
40
40
30
30
5V
20
20
10
10
4V
0
0
5
10
20
15
25
30
VDS(V)
0
0
2
4
6
8
10
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
AM13092v1
VGS
(V) VDS
VDS (V)
VDD=400V
ID=22A
12
AM13093v1
RDS(on)
(Ω)
VGS=10V
400
0.104
350
10
300
8
250
6
200
0.102
0.100
150
4
100
2
0.098
0.096
50
0
0
10
20
30
40
50
60
0
Qg(nC)
Figure 12. Capacitance variations
5
10
15
20
ID(A)
Figure 13. Output capacitance stored energy
AM14903v1
C
(pF)
0.094
0
AM14904v1
Eoss (µJ)
10
9
10000
8
Ciss
1000
7
6
5
100
Coss
4
3
10
Crss
2
1
1
0.1
1
10
100
VDS(V)
Doc ID 023436 Rev 1
0
0
100
200
300
400
500
VDS(V)
7/21
Electrical characteristics
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Figure 14. Normalized gate threshold voltage
vs temperature
AM14905v1
VGS(th)
(norm)
ID=250µA
Figure 15. Normalized on-resistance vs
temperature
AM14906v1
RDS(on)
ID=11A
(norm)
1.10
2.1
1.9
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
Figure 16. Normalized VDS vs temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
1.08
0.5
-50 -25
0
25
50
75 100
TJ(°C)
Figure 17. Source-drain diode forward
characteristics
AM14908v1
VSD
(V)
1.4
TJ=-50°C
1.2
1.06
TJ=25°C
1.0
1.04
1.02
0.8
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.94
0.92
-50 -25
8/21
0.2
0
0
25
50
75 100
TJ(°C)
Doc ID 023436 Rev 1
0
2 4
6 8 10 12 14 16 18 20 22 ISD(A)
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
AM01471v1
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 023436 Rev 1
10%
AM01473v1
9/21
Package mechanical data
4
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 7.
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/21
Typ.
0.4
0°
8°
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Package mechanical data
Figure 24. D²PAK (TO-263) drawing
0079457_T
Figure 25. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
Doc ID 023436 Rev 1
11/21
Package mechanical data
Table 8.
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
TO-220FP mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/21
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Package mechanical data
Figure 26. TO-220FP drawing
7012510_Rev_K_B
Doc ID 023436 Rev 1
13/21
Package mechanical data
Table 9.
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/21
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Package mechanical data
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 023436 Rev 1
15/21
Package mechanical data
Table 10.
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
TO-247 mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
16/21
Typ.
5.45
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
Doc ID 023436 Rev 1
5.50
5.70
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Package mechanical data
Figure 28. TO-247 drawing
0075325_G
Doc ID 023436 Rev 1
17/21
Packaging mechanical data
5
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Packaging mechanical data
Table 11.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
18/21
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 023436 Rev 1
Max.
330
13.2
26.4
30.4
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Packaging mechanical data
Figure 29. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 30. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 023436 Rev 1
19/21
Revision history
6
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
Revision history
Table 12.
20/21
Document revision history
Date
Revision
01-Aug-2012
1
Changes
Initial release.
Doc ID 023436 Rev 1
STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N
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21/21
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