STW33N20

STW33N20 N - CHANNEL ENHANCEMENT MODE POWER MOSFET TYPE ST W33N20 s s s s s s s s V DSS 200 V R DS(on) < 0.085 Ω ID 33 A TYPICAL RDS(on) = 0.073 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 150 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 TO-247 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC CONVERTERS & DC-AC INVERTERS s TELECOMMUNICATION POWER SUPPLIES s INDUSTRIAL MOTOR DRIVES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature o Value 200 200 ± 20 33 20 132 180 1.44 -65 to 150 150 Uni t V V V A A A W W/ C o o o C C (•) Pulse width limited by safe operating area October 1997 1/9 STW33N20 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.66 30 0.1 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Max Valu e 33 600 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µ A V GS = 0 Min. 200 10 100 ± 100 Typ . Max. Un it V µA µA nA Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = ± 2 0 V T c = 100 I GSS ON (∗) Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Voltage Threshold V DS = VGS Test Cond ition s ID = 250 µ A ID = 16 A 33 Min. 2 Typ . 3 0.073 Max. 4 0.085 Un it V Ω A Static Drain-source On V GS = 10 V Resistance On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 16 A VGS = 0 Min. 10 Typ . 22 3500 550 120 4500 700 160 Max. Un it S pF pF pF 2/9 STW33N20 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Cond ition s V DD = 100 V I D = 16 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) V DD = 160 V I D = 33 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 5) V DD = 160 V I D = 33 A VGS = 10 V Min. Typ . 25 50 800 Max. 40 70 Un it ns ns A/ µ s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 110 17 50 160 nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 160 V I D = 33 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) Min. Typ . 30 30 60 Max. 45 45 90 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 10 A V GS = 0 400 5.6 28 I SD = 33 A di/dt = 100 A/µ s V DD = 100 V T j = 150 o C (see test circuit, figure 5) Test Cond ition s Min. Typ . Max. 33 132 1.6 Un it A A V ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STW33N20 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STW33N20 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STW33N20 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/9 STW33N20 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/9 STW33N20 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M Dia 2 3.55 15.3 19.7 14.2 34.6 5.5 3 3.65 0.079 0.140 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 0.413 1.362 0.217 0.118 0.144 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 8/9 STW33N20 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 9/9