STW36NM60N
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET
in TO-247
Features
Order code
VDSS @
TJmax
RDS(on)
max
ID
PW
STW36NM60N
650 V
< 0.105 Ω
29 A
210 W
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
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Application
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1
TO-247
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Switching applications
– Automotive
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Description
Figure 1.
Internal schematic diagram
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This device is made using the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company’s strip layout to yield one
of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters.
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STW36NM60N
36NM60N
TO-247
Tape and reel
June 2011
Doc ID 018963 Rev 1
1/13
www.st.com
13
Contents
STW36NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
.............................................. 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Doc ID 018963 Rev 1
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STW36NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
29
A
ID
Drain current (continuous) at TC = 100 °C
18
A
IDM (1)
Drain current (pulsed)
116
PTOT
Total dissipation at TC = 25 °C
210
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)
EAS
Single pulse avalanche energy
(Starting Tj = 25 °C, ID = IAR, VDD = 50 V.)
Tj
bs
Storage temperature
-O
Max. operating juncion temperature
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dv/dt (2) Peak diode recovery voltage slope
Tstg
uc
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A
W
10.5
A
345
mJ
15
V/ns
-55 to 150
°C
150
°C
Value
Unit
0.6
°C/W
30
°C/W
300
°C
1. Pulse width limited by safe operating area.
2. ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Symbol
u
d
o
Thermal data
r
P
e
Rthj-case
let
Parameter
Thermal resistance junction-case max
Rthj-pcb(1) Thermal resistance junction-pcb max
Ob
so
Tl
Maximum lead temperature for soldering purposes
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Doc ID 018963 Rev 1
3/13
Electrical characteristics
2
STW36NM60N
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
On /off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
od
4/13
0.092
0.105
Ω
Min.
Typ.
Max.
Unit
VDS = 100 V, f = 1 MHz,
VGS = 0
-
2722
173
1.75
-
pF
pF
pF
VGS = 0, VDS = 0 to 480 V
-
458
-
pF
2
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VGS = 10 V, ID = 14.5 A
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(s
Coss eq.(1) Equivalent Output
capacitance
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V
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Test conditions
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4
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
µA
µA
3
Dynamic
r
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e
10
100
nA
Static drain-source on
resistance
Ciss
Coss
Crss
Unit
100
RDS(on)
Symbol
Max.
V
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Table 5.
Typ.
600
IDSS
VGS(th)
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o
Min.
Rg
Gate input resistance
f =1MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
-
2.9
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 29 A,
VGS = 10 V
(see Figure 15)
-
83.6
14
45
-
nC
nC
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Doc ID 018963 Rev 1
STW36NM60N
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 7.
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
VDD = 300 V, ID = 14.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
Min.
Typ.
-
17
34
106
67
Min
Typ.
Max Unit
-
Source drain diode
Symbol
ISD
Test conditions
Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 29 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 29 A, di/dt = 100 A/µs
VDD= 60 V (see Figure 19)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 29 A, di/dt = 100 A/µs
VDD= 60 V Tj = 150 °C
(see Figure 19)
)
(s
1. Pulse width limited by safe operating area
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uc
-
ns
ns
ns
ns
Max Unit
29
116
A
A
1.6
V
-
408
8
39
ns
µC
A
-
480
10
42
ns
µC
A
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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Electrical characteristics
STW36NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM09017v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
100
10
10µs
100µs
1ms
)
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10ms
1
0.1
0.1
Figure 4.
10
1
c
u
d
VDS(V)
100
Output characteristics
Figure 5.
e
t
le
AM09020v1
ID (A)
ID (A)
so
VGS=10V
80
80
70
60
6V
)
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ct
50
40
30
u
d
o
20
10
0
0
e
t
e
ol
Figure 6.
bs
O
5
Pr
10
15
20
b
O
-
5V
25
30
60
50
40
30
20
0
0
VDS(V)
AM09022v1
VDD=480V
ID=29A
VDS=20V
10
VDS
12
AM09021v1
70
Gate charge vs gate-source voltage Figure 7.
VGS
(V)
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P
Transfer characteristics
400
2
4
8
6
VGS(V)
Static drain-source on resistance
AM09023v1
RDS(on)
(Ω)
VGS=10V
0.098
350
10
300
0.096
8
250
0.094
6
200
0.092
150
4
0.090
100
2
50
0
0
6/13
2
4
6
8
10 12
14
0
16 Qg(nC)
0.088
0.086
0
Doc ID 018963 Rev 1
5
10
15
20
25
30
ID(A)
STW36NM60N
Figure 8.
Electrical characteristics
Capacitance variations
Figure 9.
AM09024v1
C
(pF)
Output capacitance stored energy
AM09025v1
Eoss
(µJ)
10000
Ciss
2
1000
Coss
100
1
)
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t(
10
Crss
1
0.1
1
100
10
0
0
VDS(V)
Figure 10. Normalized gate threshold voltage
vs temperature
(norm)
(norm)
400
500
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P
ol
2.1
s
b
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1.9
VDS(V)
AM09027v1
ID=14.5A
1.7
1.00
)-
s
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t
c
0.90
du
0.80
ro
P
e
0.70
-50 -25
0
25
50
75 100
t
e
l
o
TJ(°C)
AM00897v1
BVDSS
(norm)
1.5
1.3
1.1
0.9
0.7
Figure 12. Normalized BVDSS vs temperature
O
e
t
e
RDS(on)
ID=250µA
1.10
bs
c
u
d
300
Figure 11. Normalized on resistance vs
temperature
AM09026v1
VGS(th)
200
100
ID=1mA
0.5
-50 -25
0
25
50
TJ(°C)
75 100
Figure 13. Source-drain diode forward
characteristics
AM09039v1
VSD
(V)
1.07
1.6
1.05
1.4
1.03
1.2
1.01
1.0
0.99
0.8
0.97
0.6
0.95
0.4
TJ=-50°C
TJ=25°C
TJ=150°C
0.93
-50 -25
0
25
50
75 100
TJ(°C)
Doc ID 018963 Rev 1
0
5
10
15
20
25
ISD(A)
7/13
Test circuits
3
STW36NM60N
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
RG
2200
μF
D.U.T.
2.7kΩ
47kΩ
1kΩ
AM01468v1
e
t
le
D.U.T.
VG
c
u
d
PW
PW
)
s
t(
100Ω
Vi=20V=VGMAX
VD
o
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P
AM01469v1
Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
o
s
b
A
D
G
S
t
c
u
3.3
μF
B
25 Ω
D
1000
μF
RG
S
2200
μF
let
3.3
μF
VDD
ID
Vi
P
e
D.U.T.
Pw
AM01470v1
Figure 18. Unclamped inductive waveform
O
L
VD
VDD
d
o
r
G
o
s
b
(s)
L=100μH
-O
AM01471v1
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/13
0
Doc ID 018963 Rev 1
10%
AM01473v1
STW36NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
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Doc ID 018963 Rev 1
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Package mechanical data
Table 8.
STW36NM60N
TO-247 mechanical data
mm
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
E
15.45
c
u
d
)
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t(
20.15
e
5.45
L
14.20
L1
3.70
e
t
le
so
L2
o
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P
15.75
14.80
4.30
18.50
∅P
3.55
∅R
4.50
S
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Max.
Doc ID 018963 Rev 1
5.50
3.65
5.50
STW36NM60N
Package mechanical data
Figure 20. TO-247 drawing
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Revision history
5
STW36NM60N
Revision history
Table 9.
Document revision history
Date
Revision
21-Jun-2011
1
Changes
First release.
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STW36NM60N
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