STB38N65M5, STP38N65M5,
STW38N65M5
N-channel 650 V, 0.073 Ω typ., 30 A MDmesh™ V Power MOSFETs
in D2PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
TAB
2
Order codes
3
1
D2PAK
VDS @
TJmax
RDS(on)
max
ID
710 V
0.095 Ω
30 A
STB38N65M5
STP38N65M5
TAB
STW38N65M5
• Higher VDSS rating and high dv/dt capability
3
1
3
2
2
TO-220
• Excellent switching performance
• 100% avalanche tested
1
TO-247
Figure 1. Internal schematic diagram
Applications
• Switching applications
'Ć7$%
Description
*
6
$0Y
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
Package
Packaging
D2PAK
Tape and reel
STB38N65M5
STP38N65M5
38N65M5
TO-220
Tube
STW38N65M5
April 2014
This is information on a product in full production.
TO-247
DocID022851 Rev 4
1/21
www.st.com
21
Contents
STB38N65M5, STP38N65M5, STW38N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
......................... 6
3
Test circuits
.............................................. 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1
D2PAK, STB38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2
TO-220, STP38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3
TO-247, STW38N65M5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 25
V
ID
Drain current (continuous) at TC = 25 °C
30
A
ID
Drain current (continuous) at TC = 100 °C
19
A
IDM (1)
Drain current (pulsed)
120
A
PTOT
Total dissipation at TC = 25 °C
190
W
Peak diode recovery voltage slope
15
V/ns
MOSFET dv/dt ruggedness
50
V/ns
- 55 to 150
°C
150
°C
dv/dt
(2)
dv/dt
(3)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 30 A, di/dt ≤ 400 A/μs; VPeak < V(BR)DSS, VDD = 400 V
3. VDS ≤ 520 V
Table 3. Thermal data
Value
Symbol
Rthj-case
Parameter
D2PAK
Thermal resistance junction-case max
max(1)
Rthj-pcb
Thermal resistance junction-pcb
Rthj-amb
Thermal resistance junction-ambient max
Unit
TO-220
TO-247
0.66
°C/W
30
°C/W
62.5
50
°C/W
1. 1.When mounted on 1inch² FR-4 board, 2 oz Cu.
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
8
A
EAS
Single pulse avalanche energy
(starting tj = 25°C, Id= IAR; Vdd= 50V)
660
mJ
DocID022851 Rev 4
3/21
Electrical characteristics
2
STB38N65M5, STP38N65M5, STW38N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ.
Unit
650
V
VDS = 650 V
Zero gate voltage
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
Max.
1
μA
100
μA
± 100
nA
4
5
V
0.073
0.095
Ω
Min.
Typ.
Max.
Unit
-
3000
-
pF
-
74
-
pF
-
5.8
-
pF
-
244
-
pF
-
70
-
pF
f = 1 MHz open drain
-
2.4
-
Ω
VDD = 520 V, ID = 15 A,
VGS = 10 V
(see Figure 18)
-
71
-
nC
-
18
-
nC
-
30
-
nC
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 μA
RDS(on)
Static drain-source
on-resistance
3
VGS = 10 V, ID = 15 A
Table 6. Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)(1)
Equivalent
capacitance time
related
Co(er)(2)
Equivalent
capacitance energy
related
VDS = 100 V, f = 1 MHz,
VGS = 0
VDS = 0 to 520 V, VGS = 0
RG
Intrinsic gate
resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/21
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
Electrical characteristics
Table 7. Switching times
Symbol
td (v)
Parameter
Voltage delay time
tr (v)
Voltage rise time
tf (i)
Current fall time
tc(off)
Test conditions
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Crossing time
Min.
Typ.
Max. Unit
-
66
-
ns
-
9
-
ns
-
9
-
ns
-
13
-
ns
Min.
Typ.
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Max. Unit
Source-drain current
-
30
A
ISDM
(1)
Source-drain current (pulsed)
-
120
A
VSD
(2)
Forward on voltage
-
1.5
V
ISD
trr
ISD = 30 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 30 A, di/dt = 100 A/μs
VDD = 100 V (see Figure 22)
ISD = 30 A, di/dt = 100 A/μs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
-
382
ns
-
6.6
μC
-
35
A
-
522
ns
-
10.3
μC
-
40
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID022851 Rev 4
5/21
Electrical characteristics
2.1
STB38N65M5, STP38N65M5, STW38N65M5
Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK and
TO-220
Figure 3. Thermal impedance for D²PAK and
TO-220
AM12634v1
ID
(A)
100
is
ea n)
ar DS(o
th x R
in ma
n
it o by
ra d
pe ite
O Lim
is
10
10µs
100µs
1ms
Tj=150°C
Tc=25°C
1
0.1
0.1
10ms
Sinlge
pulse
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-247
Figure 5. Thermal impedance for TO-247
AM12636v1
ID
(A)
100
is
ea n)
ar DS(o
R
t x
in ma
n
io by
t
ra d
pe ite
O Lim
s
hi
10
10µs
100µs
1ms
Tj=150°C
Tc=25°C
1
10ms
Sinlge
pulse
0.1
0.1
1
10
100
VDS(V)
Figure 6. Output characteristics
GIPG040420141156SA
ID
(A)
80
VGS = 9, 10 V
Figure 7. Transfer characteristics
GIPG040420141218SA
ID
(A)
80
VDS= 25V
VGS = 8 V
60
VGS = 7 V
40
40
20
0
0
6/21
60
VGS = 6 V
20
0
5
10
15
20 VDS(V)
DocID022851 Rev 4
3
4
5
6
7
8
VGS(V)
STB38N65M5, STP38N65M5, STW38N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM12639v1
VDS
VGS
(V)
VDD=520V
(V)
ID=15A
500
VDS
12
Figure 9. Static drain-source on-resistance
AM12640v1
RDS(on)
(Ω)
0.088
VGS=10V
0.076
400
300
8
0.074
0.072
0.070
200
0.068
4
100
0
0
20
40
60
0
Qg(nC)
80
Figure 10. Capacitance variations
0.064
0
5
10
15
20
25 ID(A)
Figure 11. Output capacitance stored energy
AM12641v1
C
(pF)
0.066
AM12642v1
Eoss
(µJ)
14
10000
12
Ciss
1000
10
8
100
6
Coss
4
10
2
Crss
1
0.1
1
10
100
Figure 12. Normalized gate threshold voltage vs
temperature
AM05459v1
VGS(th)
(norm)
1.10
0
0
VDS(V)
ID = 250 µA
100
200 300
400 500 600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
AM05460v1
VGS = 10 V
ID = 15 A
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
DocID022851 Rev 4
0
25
50
75 100
TJ(°C)
7/21
Electrical characteristics
STB38N65M5, STP38N65M5, STW38N65M5
Figure 14. Source-drain diode forward
characteristics
AM05461v1
VSD
(V)
Figure 15. Normalized V(BR)DSS vs temperature
AM10399v1
V(BR)DSS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
30
20
40
50 ISD(A)
0.92
-50 -25
Figure 16. Switching losses vs gate
resistance (1)
E
(μJ)
600
500
AM12643v1
Eon
ID=20A
VDD=400V
L=50µH
400
300
Eoff
200
100
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode.
8/21
DocID022851 Rev 4
0
25
50
75 100
TJ(°C)
STB38N65M5, STP38N65M5, STW38N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 20. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
Inductive Load Turn - off
9%5'66
Id
9'
90%Vds
90%Id
td(v)
,'0
Vgs
90%Vgs
on
,'
))
Vgs(I(t))
9''
9''
10%Id
10%Vds
Vds
tr(v)
$0Y
DocID022851 Rev 4
tf(i)
tc(off)
AM05540v1
9/21
Package mechanical data
4
STB38N65M5, STP38N65M5, STW38N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/21
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
4.1
Package mechanical data
D2PAK, STB38N65M5
Figure 23. D²PAK (TO-263) drawing
0079457_T
DocID022851 Rev 4
11/21
Package mechanical data
STB38N65M5, STP38N65M5, STW38N65M5
Table 9. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
12/21
Typ.
0.4
0°
8°
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
Package mechanical data
Figure 24. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
DocID022851 Rev 4
13/21
Package mechanical data
4.2
STB38N65M5, STP38N65M5, STW38N65M5
TO-220, STP38N65M5
Figure 25. TO-220 type A drawing
BW\SH$B5HYB7
14/21
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
Package mechanical data
Table 10. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID022851 Rev 4
15/21
Package mechanical data
4.3
STB38N65M5, STP38N65M5, STW38N65M5
TO-247, STW38N65M5
Figure 26. TO-247 drawing
0075325_G
16/21
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
Package mechanical data
Table 11. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID022851 Rev 4
5.70
17/21
Packaging mechanical data
5
STB38N65M5, STP38N65M5, STW38N65M5
Packaging mechanical data
Figure 27. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
18/21
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
Packaging mechanical data
Figure 28. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID022851 Rev 4
Min.
Max.
330
13.2
26.4
30.4
19/21
Revision history
6
STB38N65M5, STP38N65M5, STW38N65M5
Revision history
Table 13. Document revision history
20/21
Date
Revision
Changes
22-Feb-2012
1
First release.
21-Jun-2012
2
Document status changed from preliminary data to production data.
Added Section 2.1: Electrical characteristics (curves).
05-Mar-2013
3
Added dv/dt value on Table 2: Absolute maximum ratings.
09-Apr-2014
4
– The part number STF38N65M5 has been moved to a separate
datasheet
– Minor text changes
DocID022851 Rev 4
STB38N65M5, STP38N65M5, STW38N65M5
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21/21