STW40N60M2

STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages Datasheet − production data Features TAB TAB Order code 2 VDS @ TJmax RDS(on) max ID 650 V 0.088 Ω 34 A STB40N60M2 3 1 D2PAK 1 2 3 STP40N60M2 STW40N60M2 TO-220 • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested 2 • Zener-protected 3 1 TO-247 Applications Figure 1. Internal schematic diagram • Switching applications • LLC converters, resonant converters '7$% Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. * 6 AM01476v1 Table 1. Device summary Order code Marking Packages Packing D2PAK Tape and reel STB40N60M2 STP40N60M2 40N60M2 TO-220 Tube STW40N60M2 August 2016 This is information on a product in full production. TO-247 DocID024932 Rev 4 1/21 www.st.com Contents STB40N60M2, STP40N60M2, STW40N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 D2PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 34 A ID Drain current (continuous) at TC = 100 °C 22 A IDM(1) Drain current (pulsed) 136 A PTOT Total dissipation at TC = 25 °C 250 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range Tj °C - 55 to 150 Operating junction temperature range °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter D2PAK Unit TO-220 Rthj-case Thermal resistance junction-case (1) Rthj-pcb Thermal resistance junction-pcb Rthj-amb Thermal resistance junction-ambient TO-247 0.50 °C/W 30 °C/W 62.5 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 6 A EAS Single pulse avalanche energy (starting Tj =25°C, ID = IAR; VDD= 50 V) 500 mJ DocID024932 Rev 4 3/21 21 Electrical characteristics 2 STB40N60M2, STP40N60M2, STW40N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. Unit 600 V VGS = 0, VDS = 600 V 1 µA VGS = 0, VDS = 600 V, TC = 125 °C (1) 100 µA VDS = 0, VGS = ± 25 V ±10 µA 3 4 V 0.078 0.088 Ω Min. Typ. Max. Unit - 2500 - pF - 117 - pF - 2.4 - pF VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 17 A 1. Defined by design, not subject to production test Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 342 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 4.4 - Ω Qg Total gate charge - 57 - nC Qgs Gate-source charge - 10 - nC Qgd Gate-drain charge VDD = 480 V, ID = 34 A, VGS = 10 V (see Figure 17) - 25.5 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/21 DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 Electrical characteristics Table 7. Switching times Symbol td(on) Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 34 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and Figure 21) Rise time tr td(off) tf Turn-off-delay time Fall time Min. Typ. Max. Unit - 20.5 - ns - 13.5 - ns - 96 - ns - 11 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 34 A ISDM (1) Source-drain current (pulsed) - 136 A VSD (2) Forward on voltage ISD trr ISD = 34 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 34 A, di/dt = 100 A/µs VDD = 60 V (see Figure 18) ISD = 34 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 18) - 1.6 V - 440 ns - 8.2 µC - 37 A - 568 ns - 11.5 µC - 40.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024932 Rev 4 5/21 21 Electrical characteristics 2.1 STB40N60M2, STP40N60M2, STW40N60M2 Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and TO-220 Figure 3. Thermal impedance D2PAK and TO-220 AM16098v1 ID (A) 100 s ai re n) si a DS(o th R in ax n it o y m b a er ed Op mit iL 10 10µs 100µs 1ms 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 AM16099v1 ID (A) 100 ) on D S( pe ra ite tio d ni by n m this ax a R rea is 10µs 1ms Li O 100µs m 10 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. ransfer characteristics AM16100v1 ID (A) 90 VGS=7, 8, 9, 10V 70 70 6V 60 60 50 50 40 40 30 30 5V 20 20 10 10 6/21 VDS=18V 80 80 0 AM16101v1 ID (A) 4V 0 5 10 15 20 VDS(V) DocID024932 Rev 4 0 0 2 4 6 8 10 VGS(V) STB40N60M2, STP40N60M2, STW40N60M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM16102v1 VDS VGS (V) 12 (V) VDD=480V ID=34A VDS 500 10 400 8 Figure 9. Static drain-source on-resistance AM16103v1 RDS(on) (Ω) VGS=10V 0.082 0.081 0.080 300 0.079 6 200 0.078 4 0.077 2 100 0 0 Qg(nC) 0.076 0 10 20 30 40 50 60 Figure 10. Capacitance variations 0 4 8 12 16 20 24 28 ID(A) Figure 11. Output capacitance stored energy AM16104v1 C (pF) 0.075 AM16105v1 Eoss (µJ) 10000 15 Ciss 1000 10 100 Coss 5 10 Crss 1 0.1 1 10 100 Figure 12. Normalized gate threshold voltage vs temperature AM15718v1 VGS(th) 0 0 VDS(V) (norm) 400 100 200 300 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature AM15719v1 RDS(on) (norm) ID=17 A 1.1 ID=250µA 2.1 1.0 1.7 0.9 1.3 0.8 0.9 0.7 0.6 -50 0 50 100 TJ(°C) DocID024932 Rev 4 0.5 -50 0 50 100 TJ(°C) 7/21 21 Electrical characteristics STB40N60M2, STP40N60M2, STW40N60M2 Figure 14. Normalized V(BR)DSS vs temperature AM15714v1 V(BR)DSS (norm) ID=1 mA Figure 15. Source-drain diode forward vs temperature GIPD240920132025FSR VSD (V) 1.1 TJ= -50°C 1 1.06 0.9 TJ= 25°C 1.02 0.8 0.98 0.7 TJ= 150°C 0.94 0.6 0.9 -50 8/21 0 50 100 TJ(°C) 0.5 0 DocID024932 Rev 4 6 12 18 24 30 ISD(A) STB40N60M2, STP40N60M2, STW40N60M2 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST 2200 μF VD VGS RG 100Ω Vi=20V=VGMAX VDD D.U.T. VG 2.7kΩ D.U.T. 47kΩ PW 1kΩ PW AM01469v1 AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive load test circuit L A A A VD D G D.U.T. FAST DIODE B B 2200 μF L=100μH S 3.3 μF B 25 Ω 1000 μF D 3.3 μF VDD ID VDD G Vi RG D.U.T. S Pw AM01471v1 AM01470v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton 9%5'66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS $0Y 0 DocID024932 Rev 4 10% AM01473v1 9/21 21 Package information 4 STB40N60M2, STP40N60M2, STW40N60M2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/21 DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 4.1 Package information D2PAK (TO-263) package information Figure 22. D²PAK (TO-263) type A package outline B$BUHY DocID024932 Rev 4 11/21 21 Package information STB40N60M2, STP40N60M2, STW40N60M2 Table 9. D²PAK (TO-263) type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/21 Max. 0.4 0° 8° DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 Package information Figure 23. D²PAK footprint(a) )RRWSULQW a. All dimension are in millimeters DocID024932 Rev 4 13/21 21 Package information 4.2 STB40N60M2, STP40N60M2, STW40N60M2 TO-220 package information Figure 24. TO-220 type A package outline BW\SH$B5HYB 14/21 DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 Package information Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID024932 Rev 4 15/21 21 Package information 4.3 STB40N60M2, STP40N60M2, STW40N60M2 TO-247 package information Figure 25. TO-247 package outline B+ 16/21 DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 Package information Table 11. TO-247 package mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024932 Rev 4 5.70 17/21 21 Packing information 5 STB40N60M2, STP40N60M2, STW40N60M2 Packing information Figure 26. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 18/21 DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 Packing information Figure 27. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024932 Rev 4 Min. Max. 330 13.2 26.4 30.4 19/21 21 Revision history 6 STB40N60M2, STP40N60M2, STW40N60M2 Revision history Table 13. Document revision history Date Revision Changes 01-Jul-2013 1 First release. 23-Sep-2013 2 – Added: TO-220FP and I2PAKFP packages – Inserted: VISO in Table 2 – Modified: values in Table 4, the entire typical values in Table 6, 7 and 8 – Updated: Section 4: Package mechanical data. – Minor text changes 13-May-2014 3 – The part numbers STF40N60M2 and STFI40N60M2 have been moved to a separate datasheet – Minor text changes Updated title, features and description in cover page. 09-Aug-2016 4 Updated Table 2: Absolute maximum ratings, Table 5: On /off states and Table 8: Source drain diode. Updated Section 4.1: D2PAK (TO-263) package information and Section 4.2: TO-220 package information. Minor text changes. 20/21 DocID024932 Rev 4 STB40N60M2, STP40N60M2, STW40N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID024932 Rev 4 21/21 21