STW40NS15

N-CHANNEL 150V - 0.042Ω - 40A TO-247 MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STW40NS15 s s s s STW40NS15 VDSS 150 V RDS(on) ID(on) x RDS(on)max, VGS = 10V 40 Min. 2 Typ. 3 0.044 Max. 4 0.052 Unit V Ω A DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 20A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 20 2400 380 160 Max. Unit S pF pF pF 2/6 STW40NS15 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 75V, ID = 20A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) VDD = 120V, ID = 40A, VGS = 10V Min. Typ. 25 45 100 17 47 110 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) Tf tr(Voff) Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Test Conditions VDD = 75V, ID = 20A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Vclamp = 120V, ID = 20 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 85 Max. Unit 47 ns tf tc Fall Time Cross-over Time 35 70 ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time ISD = 40A, VGS = 0 ISD = 40A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 270 Test Conditions Min. Typ. Max. 40 160 1.5 Unit A A V ns Qrr IRRM Reverse Recovery Charge Reverse Recovery Current 200 1.5 nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STW40NS15 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STW40NS15 TO-247 MECHANICAL DATA mm MIN. A D E F F3 F4 G H L L3 L4 L5 M 2 15.3 19.7 14.2 34.6 5.5 3 0.079 4.7 2.2 0.4 1 2 3 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. 5.3 2.6 0.8 1.4 2.4 3.4 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134 DIM. P025P 5/6 STW40NS15 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6