STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
Features
TAB
TAB
Order code
VDS @ TJmax
RDS(on) max.
ID
650 V
0.087 Ω
34 A
STB42N60M2-EP
2
STP42N60M2-EP
3
D²PAK
1
TO-220
1
2
3
STW42N60M2-EP
TAB
1
TO-247
2
•
•
•
•
•
3
Figure 1: Internal schematic diagram
D(2, TAB)
Extremely low gate charge
Excellent output capacitance (COSS) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
•
•
Switching applications
Tailored for very high frequency converters
(f > 150 kHz)
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
G(1)
S(3)
AM01476v1
Table 1: Device summary
Order code
Marking
STB42N60M2-EP
STP42N60M2-EP
42N60M2EP
STW42N60M2-EP
January 2015
Package
Packaging
D²PAK
Tape and reel
TO-220
TO-247
DocID027327 Rev 1
This is information on a product in full production.
Tube
1/20
www.st.com
Contents
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.2
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 9
4
Package mechanical data ............................................................. 10
4.1
D²PAK package information ............................................................ 10
4.2
TO-220 type A package information................................................ 13
4.3
TO-247 package information ........................................................... 15
5
Packaging mechanical data .......................................................... 17
6
Revision history ............................................................................ 19
2/20
DocID027327 Rev 1
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 25
V
ID
Drain current (continuous) at TC = 25 °C
34
A
ID
Drain current (continuous) at TC = 100 °C
22
A
(1)
IDM
Drain current (pulsed)
136
A
PTOT
Total dissipation at TC = 25 °C
250
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
V/ns
- 55 to 150
°C
150
°C
Tstg
Storage temperature
Tj
Max. operating junction temperature
Notes:
(1)
Pulse width limited by safe operating area.
(2)
ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.
(3)
VDS ≤ 480 V
Table 3: Thermal data
Value
Symbol
Parameter
D²PAK
Rthj-case
Rthj-pcb
(1)
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-pcb max
TO-220
TO247
0.50
°C/W
30
Thermal resistance junction-ambient max
Unit
°C/W
62.5
50
°C/W
Notes:
(1)
When mounted on FR-4 board of inch², 2oz Cu.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax)
6
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR; VDD = 50 V)
800
mJ
DocID027327 Rev 1
3/20
Electrical characteristics
2
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage Drain
current
IGSS
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C
100
µA
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 17 A
0.076
0.087
Ω
Min.
Typ.
Max.
Unit
-
2370
-
pF
-
112
-
pF
-
2.5
-
pF
2
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
VDS= 100 V, f = 1 MHz,
VGS = 0 V
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
454
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.5
-
Ω
Qg
Total gate charge
-
55
-
nC
-
8.5
-
nC
-
25
-
nC
Coss eq.
(1)
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 480 V, ID = 34 A,
VGS = 10 V (see Figure 18:
"Gate charge test circuit")
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7: Switching energy
Symbol
E(off)
4/20
Parameter
Test conditions
Turn-off energy
(from 90% VGS to 0% ID)
Min.
Typ.
Max.
Unit
VDD = 400 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
-
13
-
µJ
VDD = 400 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
-
14.5
-
µJ
DocID027327 Rev 1
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical characteristics
Table 8: Switching times
Symbol
td(on)
tr
Parameter
Test conditions
Turn-on delay time
VDD = 300 V, ID = 17 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17: "Switching
times test circuit for
resistive load" and Figure
22: "Switching time
waveform" )
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Min.
Typ.
Max.
Unit
-
16.5
-
ns
-
9.5
-
ns
-
96.5
-
ns
-
8
-
ns
Min.
Typ.
Max.
Unit
Table 9: Source drain diode
Symbol
ISD
Parameter
Test conditions
Source-drain current
-
34
A
(1)
Source-drain current
(pulsed)
-
136
A
(2)
Forward on voltage
VGS = 0 V, ISD = 34 A
-
1.6
V
trr
Reverse recovery time
-
438
ns
Qrr
Reverse recovery charge
-
9
µC
IRRM
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 22:
"Switching time waveform")
-
41.5
A
-
538
ns
-
12
µC
-
44.5
A
ISDM
VSD
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 22: "Switching
time waveform")
Notes:
(1)
(2)
Pulse width is limited by safe operating area
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027327 Rev 1
5/20
Electrical characteristics
2.2
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK and
TO-220
ID (A)
Figure 3: Thermal impedance for D²PAK and
TO-220
GC20540
K
GIPG070120151456ALS
δ=0.5
100
0.1
DS
(o
n)
O
p
lim era
ite tion
d
by in t
m his
ax a
R rea
0.2
is
10
10µs
100µs
1ms
0.05
0.02
Zth= K*Rthj-c
δ= tp/Ƭ
10ms
1
0.1
10-1
0.01
Single pulse
Tj=150°C
TC=25°C
Single pulse
0.1
1
10
100
VDS(V)
Figure 4: Safe operating area for TO-247
ID (A)
10-2
10-5
-4
tp
-3
10
10
-2
10
Ƭ
Figure 5: Thermal impedance for TO-247
GC18460
K
GIPG070120151628ALS
tP(s)
10-1
δ=0.5
0.2
100
10-1
n)
0.05
DS
(o
O
p
lim era
ite tion
d
by in t
m his
ax a
R rea
0.1
10µs
1ms
0.01
10-2
10ms
1
0.1
0.02
100µs
is
10
Tj=150°C
TC=25°C
Single pulse
0.1
1
10
100
VDS(V)
Figure 6: Output characteristics
ID (A)
GIPG080120150837ALS
VGS = 7, 8, 9, 10 V
80
Zth= K*Rthj-c
δ= tp/Ƭ
Single pulse
tp
10-3
10-5
-4
10
-3
10
-2
10
Ƭ
10-1
tP(s)
Figure 7: Transfer characteristics
ID
(A)
GIPG080120150946ALS
80
VGS = 6 V
60
60
40
VGS = 5 V
20
VDS = 18 V
40
20
VGS = 4 V
0
0
6/20
4
8
12
16
VDS(V)
DocID027327 Rev 1
0
0
2
4
6
8
VGS (V)
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical characteristics
Figure 8: Gate charge vs gate-source voltage
VGS
(V)
12
GIPG080120151019ALS
VDS
Figure 9: Static drain-source on-resistance
VDS
(V)
500
RDS(on)
(Ω)
GIPG080120151046ALS
0.080
10
400
8
0.078
300
VDD = 480 V
ID = 34 A
6
200
VGS = 10 V
0.076
4
100
2
0
0
10
20
30
40
50
0
60 Qg(nC)
Figure 10: Capacitance variations
C
(pF)
0.074
0.072
0
5
10
15
20
25
30
35
ID(A)
Figure 11: Output capacitance stored energy
EOSS
(µJ)
GIPG080120151120ALS
GIPG080120151125ALS
18
10000
16
14
CISS
1000
12
10
f = 1 Mhz
100
8
COSS
6
10
4
CRSS
2
1
0.1
1
10
100
Figure 12: Turn-off switching loss vs drain
current
EOFF
(µJ)
0
VDS(V)
0
200
400
VDS(V)
600
Figure 13: Normalized gate threshold voltage
vs temperature
GIPG080120151154ALS
VGS(th)
(norm)
GIPG080120151205ALS
1.1
18
1
16
0.9
ID = 250 µA
14
0.8
12
0.7
10
0
1
2
3
4
5
6
7 ID(A)
DocID027327 Rev 1
0.6
-75
-25
25
75
125
TJ(°C)
7/20
Electrical characteristics
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Figure 14: Normalized on-resistance vs
temperature
RDS(on)
(norm)
Figure 15: Source-drain diode forward
characteristics
VSD
(V)
GIPG080120151407ALS
GIPG080120151416ALS
1.1
2.2
TJ = -50 °C
1.0
1.8
TJ = 25 °C
0.9
1.4
VGS = 10 V
0.8
TJ = 150 °C
1
0.7
0.6
0.2
-75
0.6
-25
25
75
125
0.5
0
TJ(°C)
4
8
12 16 20 24 28 32 ISD(A)
Figure 16: Normalized V(BR)DSS vs temperature
V(BR)DSS
(V)
GIPG080120151513ALS
1.08
1.04
1.00
ID = 1 mA
0.96
0.92
0.88
-75
8/20
-25
25
75
DocID027327 Rev 1
125
Tj(°C)
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
3
Test circuits
Test circuits
Figure 17: Switching times test circuit for resistive
load
Figure 18: Gate charge test circuit
VDD
47 k Ω
12 V
1 kΩ
100 nF
I G = CONST
Vi ≤ V GS
100 Ω
D.U.T.
2.7 k Ω
2200 μ F
VG
47 k Ω
PW
1 kΩ
AM01469v 1
Figure 19: Test circuit for inductive load
switching and diode recovery times
Figure 20: Unclamped inductive load test circuit
Figure 21: Unclamped inductive waveform
Figure 22: Switching time waveform
t on
V(BR)DSS
t d(on)
VD
toff
tr
t d(off)
tf
90%
90%
I DM
10%
ID
VDD
10%
0
VDD
VGS
AM01472v 1
DocID027327 Rev 1
0
10%
VDS
90%
AM01473v 1
9/20
Package mechanical data
4
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
4.1
D²PAK package information
Figure 23: D²PAK (TO-263) drawing
0079457_V
10/20
DocID027327 Rev 1
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Package mechanical data
Table 10: D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10
E1
8.50
8.70
8.90
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
R
V2
1.75
0.4
0°
DocID027327 Rev 1
8°
11/20
Package mechanical data
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Figure 24: D²PAK footprint
All the dimensions are in millimeters.
12/20
DocID027327 Rev 1
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
4.2
Package mechanical data
TO-220 type A package information
Figure 25: TO-220 type A package outline
DocID027327 Rev 1
13/20
Package mechanical data
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Table 11: TO-220 type A mechanical data
mm
Dim.
Min.
Max.
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/20
Typ.
A
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
DocID027327 Rev 1
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
4.3
Package mechanical data
TO-247 package information
Figure 26: TO-247 drawing
0075325_H
DocID027327 Rev 1
15/20
Package mechanical data
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Table 12: TO-247 mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
L1
3.70
L2
16/20
Typ.
5.45
5.60
14.80
4.30
18.50
ØP
3.55
3.65
ØR
4.50
5.50
S
5.30
DocID027327 Rev 1
5.50
5.70
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
5
Packaging mechanical data
Packaging mechanical data
Figure 27: Tape
DocID027327 Rev 1
17/20
Packaging mechanical data
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Figure 28: Reel
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 13: D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
18/20
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID027327 Rev 1
Min.
Max.
330
13.2
26.4
30.4
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
6
Revision history
Revision history
Table 14: Document revision history
Date
Revision
20-Jan-2015
1
DocID027327 Rev 1
Changes
First release.
19/20
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
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© 2015 STMicroelectronics – All rights reserved
20/20
DocID027327 Rev 1