STW43N60DM2
N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
Features
VDS @
Order code
STW43N60DM2
•
•
3
2
1
•
•
•
•
TO-247
Figure 1: Internal schematic diagram
TJmax.
RDS(on)
max.
ID
PTOT
650 V
0.093 Ω
34 A
250 W
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
•
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STW43N60DM2
43N60DM2
TO-247
Tube
July 2015
DocID027999 Rev 2
This is information on a product in full production.
1/12
www.st.com
Contents
STW43N60DM2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
5
2/12
TO-247 package information ............................................................. 9
Revision history ............................................................................ 11
DocID027999 Rev 2
STW43N60DM2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
ID
(1)
IDM
PTOT
Parameter
Value
Unit
V
Gate-source voltage
±25
Drain current (continuous) at Tcase = 25 °C
34
Drain current (continuous) at Tcase = 100 °C
21
Drain current (pulsed)
136
A
W
Total dissipation at Tcase = 25 °C
250
dv/dt
(2)
Peak diode recovery voltage slope
50
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tstg
Tj
Storage temperature
Operating junction temperature
A
V/ns
-55 to 150
°C
Value
Unit
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
ISD ≤ 34 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
(3)
VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
0.50
50
°C/W
Table 4: Avalanche characteristics
Symbol
IAR
(1)
EAS
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Value
Unit
6
A
800
mJ
Notes:
(1)
starting Tj = 25 °C, ID = IAR, VDD = 50 V.
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3/12
Electrical characteristics
2
STW43N60DM2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
±5
µA
4
5
V
0.085
0.093
Ω
Min.
Typ.
Max.
Unit
-
2500
-
-
120
-
-
3
-
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 17 A
3
µA
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
pF
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
200
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4
-
Ω
Qg
Total gate charge
-
56
-
Qgs
Gate-source charge
-
13
-
Qgd
Gate-drain charge
VDD = 480 V, ID = 34 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
-
30
-
eq.
(1)
nC
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
4/12
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
VDD = 300 V, ID = 25 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 14: "Switching
times test circuit for
resistive load" and Figure
19: "Switching time
waveform")
-
29
-
-
27
-
-
85
-
-
6
-
DocID027999 Rev 2
Unit
ns
STW43N60DM2
Electrical characteristics
Table 8: Source-drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
34
A
(1)
Source-drain current
(pulsed)
-
136
A
(2)
Forward on voltage
VGS = 0 V, ISD = 34 A
-
1.6
V
trr
Reverse recovery time
-
120
ns
Qrr
Reverse recovery charge
-
0.6
µC
IRRM
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
-
10.4
A
-
240
ns
-
2.4
µC
-
20.5
A
ISDM
VSD
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test
circuit for inductive load
switching and diode
recovery times")
Notes:
(1)
(2)
Pulse width is limited by safe operating area.
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
2.1
STW43N60DM2
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
GC18460
K
δ=0.5
0.2
10
-1
0.1
0.05
0.02
10 -2
0.01
Z th= K*R thj-c
δ= t p/Ƭ
Single pulse
tp
10
6/12
Ƭ
-3
10 -5
10 -4
10 -3
10 -2
10 -1
tp (s)
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
DocID027999 Rev 2
STW43N60DM2
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
DocID027999 Rev 2
7/12
Test circuits
3
STW43N60DM2
Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
8/12
DocID027999 Rev 2
STW43N60DM2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
4.1
TO-247 package information
Figure 20: TO-247 package outline
0075325_H
DocID027999 Rev 2
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Package information
STW43N60DM2
Table 9: TO-247 package mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
10/12
Typ.
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
DocID027999 Rev 2
3.65
5.50
5.50
5.70
STW43N60DM2
5
Revision history
Revision history
Table 10: Document revision history
Date
Revision
19-Jun-2015
1
Initial release.
Part number STW43N60DM2 previously included in DocID026790
2
On cover page:
- updated title
In section Electrical characteristics:
- updated tables Static, Dynamic, Switching times and Source-drain
diode
In section Electrical characteristics (curves):
- updated figures Gate charge vs gate-source voltage, Static drainsource on-resistance, and Capacitance variations
02-Jul-2015
Changes
DocID027999 Rev 2
11/12
STW43N60DM2
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DocID027999 Rev 2
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