STW43NM60ND

STW43NM60ND N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh™ Power MOSFET (with fast diode) Features Type STW43NM60ND ■ ■ ■ ■ ■ VDSS @ TJMAX 650 V RDS(on) max < 0.088 Ω ID 35 A 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities. Figure 1. TO-247 Application ■ Internal schematic diagram Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order code Marking 43NM60ND Package TO-247 Packaging Tube STW43NM60ND February 2010 Doc ID 14402 Rev 3 1/12 www.st.com 12 Contents STW43NM60ND Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 14402 Rev 3 STW43NM60ND Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 600 ± 25 35 22 140 255 40 –55 to 150 150 Unit V V A A A W V/ns °C °C PTOT dv/dt (2) Tstg Tj 1. Pulse width limited by safe operating area 2. ISD ≤ 35 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.49 50 300 Unit °C/W °C/W °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) Value 14 1000 Unit A mJ Doc ID 14402 Rev 3 3/12 Electrical characteristics STW43NM60ND 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating, @125 °C VGS = ± 20 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 17.5 A 3 4 Min. 600 1 100 100 5 Typ. Max. Unit V µA µA nA V Ω 0.075 0.088 Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Qg Qgs Qgd Rg Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS=15 V, ID = 17.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 17 4300 250 25 530 145 18 80 1.7 Max. Unit S pF pF pF pF nC nC nC Ω - - VGS = 0, VDS = 0 to 480 V VDD = 480 V, ID = 35 A, VGS = 10 V, (see Figure 15) f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - - - - - - 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 Doc ID 14402 Rev 3 STW43NM60ND Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 17.5 A RG = 4.7 Ω VGS = 10 V (see Figure 14) Min. Typ. Max. Unit 30 40 120 50 ns ns ns ns - - Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, VGS = 0 ISD = 35 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) ISD = 35 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) Test conditions Min 190 1.6 17 280 3.0 22 Typ. Max 35 140 1.3 Unit A A V ns µC A ns µC A - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 14402 Rev 3 5/12 Electrical characteristics STW43NM60ND 2.1 Figure 2. ID (A) 10 2 Electrical characteristics (curves) Safe operating area AM01508v1 Figure 3. Thermal impedance O p lim era ite tio dn by in m thi ax s a R re D a 10µs 10 1 S( o n) is 100µs 1ms 10ms 10 0 10-1 10-1 10 0 10 1 10 2 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. gfs (S) 20.5 Transconductance AM01511v1 Figure 7. RDS(on) (Ω) 0.085 TJ=25°C 0.080 Static drain-source on resistance AM01512v1 TJ=-50°C 15.5 TJ=150°C 10.5 0.070 5.5 0.065 0.060 0 0.075 0.5 0 5 10 15 20 25 30 35 ID(A) 10 20 30 ID(A) 6/12 Doc ID 14402 Rev 3 STW43NM60ND Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature VGS(th) (norm) 1.1 AM01515v1 Figure 11. Normalized on resistance vs temperature RDS(on) (norm) 2.1 1.9 AM01516v1 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 0.7 -50 -25 0 25 50 75 100 125 TJ(°C) 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 12. Source-drain diode forward characteristics VSD (V) 1.0 25°C 0.9 0.8 0.7 0.6 0.5 0.4 0 5 10 15 20 25 30 35 ISD(A) -50°C TJ=150°C AM01517v1 Figure 13. Normalized BVDSS vs temperature BV(DSS) (V) AM01518v1 1.05 1.01 0.97 0.93 -50 -25 0 25 50 75 100 125 TJ(°C) Doc ID 14402 Rev 3 7/12 Test circuits STW43NM60ND 3 Test circuits Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 8/12 Doc ID 14402 Rev 3 STW43NM60ND Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 14402 Rev 3 9/12 Package mechanical data STW43NM60ND TO-247 mechanical data Dim. A A1 b b1 b2 c D E e L L1 L2 øP øR S 3.55 4.50 5.50 14.20 3.70 18.50 3.65 5.50 mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.80 4.30 Typ. Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 10/12 Doc ID 14402 Rev 3 STW43NM60ND Revision history 5 Revision history Table 9. Date 06-Feb-2008 22-Jan-2009 16-Feb-2010 Document revision history Revision 1 2 3 First release Document status promoted from preliminary data to datasheet. Figure 13: Normalized BVDSS vs temperature has been corrected Changes Doc ID 14402 Rev 3 11/12 STW43NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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