STW45N60DM6

STP45N60DM6, STW45N60DM6 Datasheet N-channel 600 V, 0.085 Ω typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Features TAB Order code STP45N60DM6 1 2 3 1 2 3 TO-247 TO-220 D(2, TAB) G(1) STW45N60DM6 VDS RDS(on) max. ID 600 V 0.099 Ω 30 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications S(3) AM01476v1_tab • Switching applications Description Product status links These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. STP45N60DM6 STW45N60DM6 Product summary Order code STP45N60DM6 Marking 45N60DM6 Package TO-220 Packing Tube Order code STW45N60DM6 Marking 45N60DM6 Package TO-247 Packing Tube DS11664 - Rev 3 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STP45N60DM6, STW45N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 30 A Drain current (continuous) at TC = 100 °C 19 A Drain current (pulsed) 95 A Total power dissipation at TC = 25 °C 210 W dv/dt (2) Peak diode recovery voltage slope 100 V/ns di/dt (2) Peak diode recovery current slope 1000 A/µs dv/dt (3) MOSFET dv/dt ruggedness 100 V/ns -55 to 150 °C VGS ID IDM (1) PTOT Tstg TJ Parameter Storage temperature range Operating junction temperature range 1. Pulse width limited by safe operating area 2. ISD ≤ 30 A, VDS (peak) < V(BR)DSS, VDD= 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value TO-220 TO-247 °C/W 0.6 62.5 Unit 50 °C/W Table 3. Avalanche characteristics Symbol DS11664 - Rev 3 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) Value Unit 6 A 630 mJ page 2/15 STP45N60DM6, STW45N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 5 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V, TC = 125 °C(1) 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 4.75 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 15 A 0.085 0.099 Ω Min. Typ. Max. Unit - 1920 - pF - 120 - pF - 2 - pF 3.25 1. Defined by design, not subject to production test Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 310 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.5 - Ω Qg Total gate charge - 44 - nC Qgs Gate-source charge - 10 - nC Qgd Gate-drain charge - 25 - nC VDS= 100 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 30 A, VGS = 0 to 10 V (see )Figure 16. Test circuit for gate charge behavior 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) tr td(off) tf DS11664 - Rev 3 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Max. Unit VDD = 300 V, ID = 15 A RG = 4.7 Ω, VGS = 10 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) and Figure 20. Switching time waveform - 15 - ns - 5.3 - ns - 50 - ns - 7.3 - ns page 3/15 STP45N60DM6, STW45N60DM6 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 30 A ISDM,(1) Source-drain current (pulsed) - 95 A VSD (2) Forward on voltage VGS = 0 V, ISD = 30 A - 1.6 V trr Reverse recovery time - 110 ns Qrr Reverse recovery charge - 0.5 µC IRRM Reverse recovery current ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V (see )Figure 17. Test circuit for inductive load switching and diode recovery times - 9 A ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see )Figure 17. Test circuit for inductive load switching and diode recovery times - 215 ns - 2 µC - 17 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width is limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS11664 - Rev 3 page 4/15 STP45N60DM6, STW45N60DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 ID (A) Figure 2. Thermal impedance for TO-220 GC20540 GADG270720171029SOA Operation in this area is limited by R DS(on) 10 2 tp =1 µs 10 1 tp =10 µs tp =100 µs tp =1 ms 10 0 tp =10 ms 10 -1 10 -1 T j ≤150 °C T c = 25°C single pulse 10 0 10 1 10 2 VDS (V) Figure 3. Safe operating area for TO-247 ID (A) Figure 4. Thermal impedance for TO-247 GADG270720171030SOA Operation in this area is limited by R DS(on) 10 2 tp =1 µs tp =10 µs tp =100 µs 10 1 tp =1 ms tp =10 ms 10 0 10 -1 10 -1 T j ≤150 °C T c = 25°C single pulse 10 0 10 1 10 2 VDS (V) Figure 5. Output characteristics ID (A) Figure 6. Transfer characteristics GADG200720171438OCH VGS = 9, 10 V 80 VGS = 8 V VDS = 18 V 60 VGS = 7 V 40 40 VGS = 6 V 20 DS11664 - Rev 3 GADG200720171438TCH 80 60 0 0 ID (A) 20 VGS = 5 V 4 8 12 16 VDS (V) 0 4 5 6 7 8 VGS (V) page 5/15 STP45N60DM6, STW45N60DM6 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage VGS (V) GADG200720171438QVG VDS (V) VDD = 480 V ID = 30 A 12 Figure 8. Static drain-source on-resistance RDS(on) (Ω) 600 0.091 500 0.089 8 400 0.087 6 300 0.085 4 200 0.083 2 100 0.081 0 Qg (nC) 0.079 0 10 VDS 0 0 8 16 24 32 40 48 VGS = 10 V 5 10 15 20 25 30 ID (A) Figure 10. Normalized gate threshold voltage vs temperature Figure 9. Capacitance variations C (pF) GADG270720171030RID GADG250720171026CVR VGS(th) (norm.) 10 4 GADG200720171435VTH ID = 250 µA 1.1 CISS 10 3 1 0.9 10 2 COSS f = 1 MHz 10 1 10 0 10 -1 10 0 CRSS 10 1 10 2 VDS (V) Figure 11. Normalized on-resistance vs temperature RDS(on) (norm.) GADG200720171435RON VGS = 10 V 2.5 0.8 0.7 0.6 -75 V(BR)DSS (norm.) 1.08 1.04 1.5 1 1 0.96 0.5 0.92 DS11664 - Rev 3 -25 25 75 125 Tj ( °C) 25 75 125 Tj ( °C) Figure 12. Normalized V(BR)DSS vs temperature 2 0 -75 -25 0.88 -75 GADG200720171436BDV ID = 1 mA -25 25 75 125 Tj ( °C) page 6/15 STP45N60DM6, STW45N60DM6 Electrical characteristics (curves) Figure 13. Source-drain diode forward characteristics VSD (V) GADG270720171031SDF 1.1 EOSS (µJ) GADG200720171522CSE 20 Tj = -50 °C 1 Tj = 25 °C 0.9 Figure 14. Output capacitance stored energy 16 12 0.8 8 Tj = 150 °C 0.7 4 0.6 0.5 0 DS11664 - Rev 3 5 10 15 20 25 30 ISD (A) 0 0 100 200 300 400 500 600 VDS (V) page 7/15 STP45N60DM6, STW45N60DM6 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS11664 - Rev 3 page 8/15 STP45N60DM6, STW45N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220 type A package information Figure 21. TO-220 type A package outline 0015988_typeA_Rev_23 DS11664 - Rev 3 page 9/15 STP45N60DM6, STW45N60DM6 TO-220 type A package information Table 8. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS11664 - Rev 3 Typ. 0.03 0.10 page 10/15 STP45N60DM6, STW45N60DM6 TO-247 package information 4.2 TO-247 package information Figure 22. TO-247 package outline 0075325_9 DS11664 - Rev 3 page 11/15 STP45N60DM6, STW45N60DM6 TO-247 package information Table 9. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS11664 - Rev 3 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 12/15 STP45N60DM6, STW45N60DM6 Revision history Table 10. Document revision history Date Revision 27-May-2016 1 Changes First release. Updated title and in cover page. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". 01-Aug-2017 2 Added Section 2.1: "Electrical characteristics (curves)". Document status promoted from preliminary to production data. Minor text changes. 03-Jul-2020 DS11664 - Rev 3 3 Modified Table 1. Absolute maximum ratings. Minor text changes. page 13/15 STP45N60DM6, STW45N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11664 - Rev 3 page 14/15 STP45N60DM6, STW45N60DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS11664 - Rev 3 page 15/15