STW45NM60

STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh™ Power MOSFET General features Type STW45NM60 ■ ■ ■ ■ ■ VDSS (@Tjmax) 650V RDS(on) < 0.11Ω ID 45A High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields TO-247 Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products. Internal schematic diagram Applications ■ Switching application Order codes Part number STW45NM60 Marking W45NM60 Package TO-247 Packaging Tube December 2006 Rev 7 1/12 www.st.com 12 Contents STW45NM60 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW45NM60 Electrical ratings 1 Electrical ratings Table 1. Symbol VGS ID ID IDM (1) PTOT (2) Absolute maximum ratings Parameter Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value ±30 45 28 180 417 3.33 15 –65 to 150 150 Unit V A A A W W/°C V/ns °C °C dv/dt Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Tstg Tj 1. Pulse width limited by safe operating area 2. ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS Table 2. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-amb Maximum lead temperature for soldering purpose Value 0.3 30 300 Unit °C/W °C/W °C Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) Max value 15 850 Unit A mJ 3/12 Electrical characteristics STW45NM60 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 µA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 °C VGS = ±30V VDS = VGS, ID = 250µA VGS = 10V, ID = 22.5A 3 4 0.09 Min. 600 10 100 ±100 5 0.11 Typ. Max. Unit V µA µA nA V Ω Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID= 22.5A Min. Typ. Max. 15 3800 1250 80 340 Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 480V f=1 MHz Gate DC Bias = 0 test signal level = 20mV open drain VDD = 400V, ID = 45A, VGS = 10V Figure 14 pF RG Qg Qgs Qgd 1.4 96 31 43 134 Ω nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 STW45NM60 Electrical characteristics Table 6. Symbol td(on) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 250V, ID = 22.5A RG = 4.7Ω VGS = 10V Figure 13 VDD = 400V, ID = 45A, RG = 4.7Ω, VGS = 10V Figure 13 Min. Typ. 30 20 16 23 40 Max. Unit ns ns ns ns ns Table 7. Symbol ISD ISDM VSD (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45A, VGS = 0 ISD = 45A, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C Figure 15 ISD = 45A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C Figure 15 508 10 40 650 14 43 Test conditions Min. Typ. Max. 45 180 1.5 Unit A A V ns µC A ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 5/12 Electrical characteristics STW45NM60 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static-drain source on resistance 6/12 STW45NM60 Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics Figure 12. Normalized BVDSS vs temperature 7/12 Test circuit STW45NM60 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/12 STW45NM60 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data STW45NM60 10/12 STW45NM60 Revision history 5 Revision history Table 8. Date 05-Mar-2005 16-May-2006 18-Dec-2006 Revision history Revision 5 6 7 Changes Complete document with curves The document has been reformatted Updates curves:Figure 1., Figure 4. and Figure 6. 11/12 STW45NM60 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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