STW48N60DM2

STW48N60DM2 N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data Features   3 2     1 TO-247 Order code VDS RDS(on) max. ID STW48N60DM2 600 V 0.079 Ω 40 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Figure 1: Internal schematic diagram  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STW48N60DM2 48N60DM2 TO-247 Tube October 2015 DocID026927 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents STW48N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/12 TO-247 package information ............................................................. 9 Revision history ............................................................................ 11 DocID026927 Rev 2 STW48N60DM2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter VGS ID (1) IDM PTOT Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 40 Drain current (continuous) at Tcase = 100 °C 25 Drain current (pulsed) 160 A Total dissipation at Tcase = 25 °C 300 W 50 V/ns -55 to 150 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tstg Storage temperature Tj Operating junction temperature A Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 40 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V. (3) VDS ≤ 480 V. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Value Unit 0.42 °C/W 50 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax) 7 A EAR Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 950 mJ DocID026927 Rev 2 3/12 Electrical characteristics 2 STW48N60DM2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 VGS = 0 V, VDS = 600 V, Tcase = 125 °C 100 Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 20 A 0.065 0.079 Ω Min. Typ. Max. Unit - 3250 - - 142 - - 4.5 - IDSS Zero gate voltage drain current IGSS 3 µA Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss Test conditions VDS = 100 V, f = 1 MHz, ID = 0 A pF Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 258 - pF RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 4 - Ω Qg Total gate charge - 70 - - 18 - - 28 - eq. (1) VDD = 480 V, ID = 40 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") Qgs Gate-source charge Qgd Gate-drain charge nC Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 7: Switching times Symbol td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf 4/12 Parameter Test conditions VDD = 300 V, ID = 20 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and ) Fall time DocID026927 Rev 2 Min. Typ. Max. - 27 - - 27 - - 131 - - 9.8 - Unit ns STW48N60DM2 Electrical characteristics Table 8: Source-drain diode Symbol (1) ISD (2) ISDM (3) VSD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 40 A Source-drain current (pulsed) - 160 A - 1.6 V Forward on voltage VGS = 0 V, ISD = 40 A trr Reverse recovery time Qrr Reverse recovery charge IRRM - 140 ns - 0.7 µC Reverse recovery current - 10 A trr Reverse recovery time - 256 ns Qrr Reverse recovery charge - 2.5 µC IRRM Reverse recovery current - 20 A ISD = 40 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") ISD = 40 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") Notes: (1) (2) (3) Limited by maximum junction temperature Pulse width is limited by safe operating area. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. V(BR)GSO Gate-source breakdown voltage IGS = ±250 μA, ID = 0 A ±30 - - Unit V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry. DocID026927 Rev 2 5/12 Electrical characteristics 2.2 STW48N60DM2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 5: Transfer characteristics Figure 4: Output characteristics Figure 6: Gate charge vs gate-source voltage 6/12 Figure 7: Static drain-source on-resistance DocID026927 Rev 2 STW48N60DM2 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source- drain diode forward characteristics DocID026927 Rev 2 7/12 Test circuits 3 STW48N60DM2 Test circuits Figure 14: Test circuit for gate charge behavior Figure 13: Test circuit for resistive load switching times Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform 8/12 DocID026927 Rev 2 Figure 18: Switching time waveform STW48N60DM2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 19: TO-247 package outline DocID026927 Rev 2 9/12 Package information STW48N60DM2 Table 10: TO-247 package mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 10/12 Typ. 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID026927 Rev 2 3.65 5.50 5.50 5.70 STW48N60DM2 5 Revision history Revision history Table 11: Document revision history Date Revisi on 21-Oct-2014 1 First release. 2 Document status promoted from preliminary to production data. Modified: title Modified: VDS in cover page Modified: Peak diode recovery voltage slope parameter value and note 2 Modified: Rthj-case value in Table 3: "Thermal data" Modified: the entire values in Table 4: "Avalanche characteristics" Modified: IDSS, IGSS max values and RDS(on) typical value in Table 5: "Static" Modified: the entire values in Table 6: "Dynamic", Table 7: "Switching times" and Table 8: "Source-drain diode" Added: Table 9: "Gate-source Zener diode" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes 29-Oct-2015 Changes DocID026927 Rev 2 11/12 STW48N60DM2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 12/12 DocID026927 Rev 2