STW48N60M2

STW48N60M2 Datasheet N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Features 2 1 3 TO-247 Order code V DS @ TJmax. RDS(on) max. ID STW48N60M2 650 V 70 mΩ 42 A • • Extremely low gate charge Excellent output capacitance (COSS) profile • • 100% avalanche tested Zener-protected Applications D(2, TAB) • G(1) Switching applications Description S(3) AM01475V1 This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status STW48N60M2 Device summary Order code STW48N60M2 Marking 48N60M2 Package TO-247 Packing Tube DS10379 - Rev 4 - March 2020 For further information contact your local STMicroelectronics sales office. www.st.com STW48N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 42 A ID Drain current (continuous) at TC = 100 °C 26 A Drain current (pulsed) 168 A Total power dissipation at TC = 25 °C 300 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns - 55 to 150 °C Value Unit 0.42 °C/W 50 °C/W Value Unit 7 A 1 J VGS IDM (1) PTOT dv/dt (2) dv/dt (3) Tstg Tj Parameter Storage temperature range Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 42 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Table 3. Avalanche characteristics Symbol IAR EAS DS10379 - Rev 4 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax.) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) page 2/12 STW48N60M2 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off-states Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Zero-gate voltage VGS = 0 V, VDS= 600 V drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance VGS = 0 V, VDS = 600 V, TC = 125 Min. Typ. Max. 600 V 1 µA 100 µA ±10 µA 3 4 V 60 70 mΩ Min. Typ. Max. Unit - 3060 - pF - 143 - pF - 4.3 - pF °C(1) VDS = 0 V, VGS = ±25 V VDS = VGS, ID = 250 µA Unit 2 VGS = 10 V, ID = 21 A 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance C oss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 480 V - 630 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 4.6 - Ω Qg Total gate charge VDD = 480 V, ID = 42 A, - 70 - nC Gate-source charge VGS = 0 to 10 V - 10.5 - nC Gate-drain charge (see Figure 14. Test circuit for gate charge behavior ) - 31 - nC Qgs Qgd VGS = 0 V, VDS = 100 V, f = 1 MHz 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td (on) tr td(off) tf DS10379 - Rev 4 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 21 A, - 18.5 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 17 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 119 - ns - 13 - ns Fall time page 3/12 STW48N60M2 Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 42 A ISDM (1) Source-drain current (pulsed) - 168 A VSD (2) Forward on voltage VGS = 0 V, ISD = 21 A - 1.6 V trr Reverse recovery time ISD = 42 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) ISD = 42 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 487 ns - 9.1 µC - 37.5 A - 605 ns - 12.5 µC - 41.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS10379 - Rev 4 page 4/12 STW48N60M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area ID (A) GADG190120170828SOA TO247EZx8 t p = 10 µs 10 2 Operation in this area is limited by max. R DS(on) 10 -1 Zth=k*Rthj-c t p = 100 µs 10 1 t p = 1 ms 10 K 0 t p = 10 ms Single pulse Tc = 25 °C T j = ≤150 °C VGS= 10 V 10 -1 10 -1 10 0 10 1 V DS (V) 10 2 Figure 3. Output characteristics ID (A) 10 -4 10 -3 10 -2 tp (s) 10 -1 Figure 4. Transfer characteristics GADG190120170825TCH 120 7V 100 10 -3 10 -5 ID (A) GADG190120170825OCH VGS = 8, 9, 10 V 120 10 -2 VDS =21 V 100 6V 80 80 60 60 5V 40 40 20 20 0 0 4 8 12 4V 20 16 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GADG190120170826QVG VDS (V) 10 VDS 8 500 0 0 2 4 6 8 VGS (V) Figure 6. Static drain-source on-resistance RDS(on) (mΩ) GADG190120170822RID VGS =10 V 64 400 VDD = 480 V ID = 42 A 62 6 300 4 200 2 100 60 0 0 DS10379 - Rev 4 10 20 30 40 50 60 70 0 Qg (nC) 58 56 0 10 20 30 40 I D (A) page 5/12 STW48N60M2 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) Figure 8. Output capacitance stored energy E OSS (µJ) GADG190120170824CVR GADG190120170827EOS 20 10 4 CISS 16 10 3 12 10 COSS 2 8 10 1 10 0 10 -1 f=1 MHz 10 0 10 1 10 2 CRSS 4 V DS (V) 0 0 Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG190120171204VTH 300 400 500 600 V DS (V) R DS(on) (nrm.) GADG190120170818RON VGS = 10 V ID = 21 A 2.0 1.0 1.5 0.9 1.0 0.8 0.5 0.7 0.6 -75 200 Figure 10. Normalized on-resistance vs temperature 2.5 I D = 250 µA 1.1 100 -25 25 75 125 T j (°C) Figure 11. Normalized V(BR)DSS vs temperature V (BR)DSS (norm.) GADG190120170823BDV -25 25 75 125 T j (°C) Figure 12. Source-drain diode forward characteristics V SD (V) GADG190120170823SDF 1.1 I D = 1 mA 1.10 0.0 -75 T j = -50 °C 1.0 1.05 T j = 25 °C 0.9 1.00 0.8 0.95 0.90 0.85 -75 DS10379 - Rev 4 T j = 150 °C 0.7 0.6 -25 25 75 125 T j (°C) 0.5 0 10 20 30 40 I SD (A) page 6/12 STW48N60M2 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS10379 - Rev 4 page 7/12 STW48N60M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 19. TO-247 package outline 0075325_9 DS10379 - Rev 4 page 8/12 STW48N60M2 TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 DS10379 - Rev 4 Typ. 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 5.50 5.70 page 9/12 STW48N60M2 Revision history Table 9. Document revision history Date Revision 09-Jun-2014 1 Changes First release. Document status promoted from preliminary to production data. 01-Sep-2014 2 Added Section 2.1: "Electrical characteristics curves". Minor text changes. Updated Table 1. Absolute maximum ratings, Table 3. Avalanche characteristics, 19-Jan-2017 3 Table 4. On /off-states and Table 6. Switching times. Updated Section 2.1 Electrical characteristics (curves). 19-Mar-2020 DS10379 - Rev 4 4 Updated Table 6. Switching times. Minor text changes. page 10/12 STW48N60M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS10379 - Rev 4 page 11/12 STW48N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS10379 - Rev 4 page 12/12