STW48NM60N

STW48NM60N N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet — production data Features Order codes VDSS @ TJmax RDS(on) max ID STW48NM60N 650 V < 0.07 Ω 44 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 2 1 TO-247 Applications ■ Switching applications Figure 1. Internal schematic diagram Description ' This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STW48NM60N 48NM60N TO-247 Tube February 2013 This is information on a product in full production. Doc ID 18313 Rev 5 1/13 www.st.com 13 Contents STW48NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 18313 Rev 5 STW48NM60N 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 44 A ID Drain current (continuous) at TC = 100 °C 28 A Drain current (pulsed) 176 A Total dissipation at TC = 25 °C 330 W 8 A IDM (1) PTOT IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 457 mJ Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.38 °C/W dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 44 A, di/dt ≤ 400 A/μs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Doc ID 18313 Rev 5 3/13 Electrical characteristics 2 STW48NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS = 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, Tc=125 °C 1 100 μA μA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 3 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 20 A 0.055 0.07 Ω V(BR)DSS Table 5. Symbol 600 2 V Dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 4285 212 9.5 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 600 - pF Rg Intrinsic gate resistance f = 1 MHz, VGS = 0 1.6 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 44 A, VGS = 10 V, (see Figure 15) 124 20 61.5 nC nC nC Ciss Coss Crss Coss eq. (1) - - 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Table 6. Symbol td(on) tr td(off) tf 4/13 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 20 A RG = 4.7 Ω VGS = 10 V (see Figure 14) Doc ID 18313 Rev 5 Min. Typ. - 99 18 214 25.5 Max. Unit - ns ns ns ns STW48NM60N Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions Min. Typ. Max. Unit - 44 176 A A 1.6 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 44 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 44 A, di/dt = 100 A/μs VDD = 100 V (see Figure 16) - 472 10.5 44.5 ns μC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 44 A, di/dt = 100 A/μs VDD = 100 V, Tj = 150 °C (see Figure 16) - 568 14 50 ns μC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Doc ID 18313 Rev 5 5/13 Electrical characteristics STW48NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM09091v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 10µs ea is ) ar S(on D R ax is th in n m tio y ra d b e e p O imit L 10 100µs 1ms 10ms 1 0.1 0.1 Figure 4. 10 1 VDS(V) 100 Output characteristics AM09092v1 ID (A) VGS=10V AM09093v1 ID (A) 7V VDS=19V 100 100 80 80 6V 60 60 40 40 5V 20 20 0 0 Figure 6. 10 5 15 20 Normalized BVDSS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 0 0 VDS(V) Figure 7. 2 6 8 10 VGS(V) Static drain-source on-resistance AM09095v1 RDS(on) (Ω) 0.058 1.08 4 VGS=10V 0.057 1.06 0.056 1.04 1.02 0.055 1.00 0.054 0.98 0.053 0.96 0.94 0.92 -50 -25 6/13 0.052 0 25 50 75 100 TJ(°C) 0.051 0 Doc ID 18313 Rev 5 5 10 15 20 25 30 35 40 ID(A) STW48NM60N Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09096v1 VGS (V) VDD=480V ID=44A 12 10 500 VDS Capacitance variations AM09097v1 C (pF) 10000 Ciss 400 1000 8 300 6 100 Coss 10 Crss 200 4 100 2 0 0 20 40 60 1 0.1 0 80 100 120 140 Qg(nC) Figure 10. Output capacitance stored energy AM15357v1 Eoss (µJ) 1 10 100 VDS(V) Figure 11. Normalized gate threshold voltage vs temperature AM09098v1 VGS(th) (norm) ID=250µA 1.10 24 20 1.00 16 0.90 12 8 0.80 4 0 0 100 200 300 400 500 600 VDS(V) Figure 12. Source-drain diode forward characteristics 0.70 -50 -25 25 0 50 75 100 125 TJ(°C) Figure 13. Normalized on-resistance vs temperature AM09100v1 VSD (V) AM09099v1 RDS(on) (norm) 1.4 ID=20A 2.1 TJ=-50°C 1.9 1.2 TJ=25°C 1.7 TJ=150°C 1.5 1.0 0.8 1.3 0.6 1.1 0.4 0.9 0.2 0 0 0.7 5 10 15 20 25 30 35 40 ISD(A) Doc ID 18313 Rev 5 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) 7/13 Test circuits 3 STW48NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 Doc ID 18313 Rev 5 10% AM01473v1 STW48NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 18313 Rev 5 9/13 Package mechanical data Table 8. STW48NM60N TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 10/13 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 18313 Rev 5 5.70 STW48NM60N Package mechanical data Figure 20. TO-247 drawing 0075325_G Doc ID 18313 Rev 5 11/13 Revision history 5 STW48NM60N Revision history Table 9. 12/13 Document revision history Date Revision Changes 06-Dec-2010 1 First release. 15-Apr-2011 2 Document status promoted from preliminary data to datasheet. 04-Jul-2011 3 Updated Figure 7. 10-Oct-2012 4 – Modified: Figure 2 – Added: Figure 10 – Updated: Section 4: Package mechanical data 19-Feb-2013 5 Updated Table 7: Source drain diode. Doc ID 18313 Rev 5 STW48NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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