STW55NM60N
N-channel 600 V, 0.047 Ω, 51 A, MDmesh™ II Power MOSFET
TO-247
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STW55NM60N
650 V
< 0.060 Ω
51 A
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
Application
■
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Switching applications
Description
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(s
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
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TO-247
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Figure 1.
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Internal schematic diagram
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STW55NM60N
W55NM60N
TO-247
Tube
July 2008
Rev 4
1/12
www.st.com
12
Contents
STW55NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
................................................ 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW55NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25°C
51
A
ID
Drain current (continuous) at TC = 100°C
32
A
Drain current (pulsed)
204
Total dissipation at TC = 25°C
350
Peak diode recovery voltage slope
15
(1)
PTOT
dv/dt
(2)
Tj
2. ISD ≤ 51 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3.
Thermal data
Symbol
s
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Parameter
)
(s
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
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Table 4.
Symbol
ct
W
V/ns
–55 to 150
°C
150
°C
Value
Unit
0.36
°C/W
50
°C/W
300
°C
Value
Unit
15
A
1600
mJ
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1. Pulse width limited by safe operating area
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Max. operating junction temperature
(s)
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Storage temperature
Tstg
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Unit
VDS
IDM
bs
Value
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID= IAS, VDD = 50 V)
3/12
Electrical characteristics
2
STW55NM60N
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS = 0
dv/dt (1)
Drain source voltage slope
VDD= 480 V, ID = 51 A,
VGS =10 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 25.5 A
Table 6.
Symbol
b
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Parameter
s
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c
gfs (1)
Forward transconductance
Ciss
Coss
Crss
Max. Unit
30
2
Min.
V/ns
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Test conditions
V
3
1
100
µA
µA
100
nA
4
V
Ω
0.047 0.060
Typ.
Max. Unit
VDS=15 V, ID = 25.5 A
45
S
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
5800
300
30
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
900
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 51 A,
VGS = 10 V,
(see Figure 15)
190
30
90
nC
nC
nC
Rg
Gate input resistance
f=1 MHz gate DC bias=0
Test signal level = 20 mV
open drain
2.5
Ω
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Dynamic
Typ.
600
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1. Characteristic value at turn off on inductive load
Min.
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Coss eq. (2)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
4/12
STW55NM60N
Electrical characteristics
Table 7.
Switching times
Symbol
td(on)
tr
td(off)
tf
Table 8.
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Min.
Typ. Max. Unit
40
30
225
70
VDD = 300 V, ID = 25.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 14)
ns
ns
ns
ns
Source drain diode
Symbol
ISD
Test conditions
Parameter
Test conditions
Min
Typ.
ISD = 25.5 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 51 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 16)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 51 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
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b
51
204
A
A
1.3
V
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let
Unit
(s)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Max
600
15
51
ns
µC
A
750
18
51
ns
µC
A
O
)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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5/12
Electrical characteristics
STW55NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
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Figure 4.
Output characteristics
Figure 5.
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Transfer characteristics
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P
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Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
STW55NM60N
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs temperature
Capacitance variations
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Figure 11. Normalized on resistance vs
temperature
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Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized BVDSS vs temperature
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7/12
Test circuit
3
STW55NM60N
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
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Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
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Figure 18. Unclamped inductive waveform
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Figure 19. Switching time waveform
STW55NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
STW55NM60N
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
Typ
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
E
15.45
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14.20
L1
3.70
L2
øP
3.55
øR
4.50
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5.45
L
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Max.
5.15
15.75
14.80
4.30
18.50
3.65
5.50
5.50
STW55NM60N
5
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
Changes
06-Nov-2007
1
Initial release
19-Dec-2007
2
Figure 9: Capacitance variations has been updated
16-Jan-2008
3
Document status promoted from preliminary data to datasheet.
31-Jul-2008
4
EAS value has been updated in Table 4
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STW55NM60N
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