STW56N60DM2
N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code
VDS
RDS(on)
max.
ID
PTOT
STW56N60DM2
600 V
0.060 Ω
50 A
360 W
•
•
3
2
1
•
•
•
•
TO-247
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Figure 1: Internal schematic diagram
•
D(2)
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packing
STW56N60DM2
56N60DM2
TO-247
Tube
June 2015
DocID026982 Rev 3
This is information on a product in full production.
1/12
www.st.com
Contents
STW56N60DM2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
5
2/12
TO-247 package information ............................................................. 9
Revision history ............................................................................ 11
DocID026982 Rev 3
STW56N60DM2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
ID
(1)
IDM
PTOT
Parameter
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at Tcase = 25 °C
50
Drain current (continuous) at Tcase = 100 °C
31
Drain current (pulsed)
200
A
W
Total dissipation at Tcase = 25 °C
360
dv/dt
(2)
Peak diode recovery voltage slope
50
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tstg
Tj
Storage temperature
Operating junction temperature
A
V/ns
-55 to 150
°C
Value
Unit
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
ISD ≤ 50 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
(3)
VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
0.35
50
°C/W
Table 4: Avalanche characteristics
Symbol
(1)
IAS
(2)
EAS
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
12
A
Single pulse avalanche energy
800
mJ
Notes:
(1)
(2)
Pulse width limited by Tjmax.
starting Tj = 25 °C, ID = IAS, VDD = 50 V.
DocID026982 Rev 3
3/12
Electrical characteristics
2
STW56N60DM2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
10
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
±5
µA
4
5
V
0.052
0.060
Ω
Min.
Typ.
Max.
Unit
-
4100
-
-
190
-
-
3.2
-
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 25 A
3
µA
Table 6: Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
325
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.2
-
Ω
Qg
Total gate charge
-
90
-
Qgs
Gate-source charge
-
18
-
Qgd
Gate-drain charge
VDD = 480 V, ID = 50 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
-
44
-
Test conditions
Min.
Typ.
Max.
VDD = 300 V, ID = 25 A
RG = 4.7 Ω (see Figure 14:
"Switching times test circuit
for resistive load" and
Figure 19: "Switching time
waveform")
-
24
-
-
60
-
-
130
-
-
12
-
VDS = 100 V, f = 1 MHz,
VGS = 0 V
pF
nC
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
4/12
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
DocID026982 Rev 3
Unit
ns
STW56N60DM2
Electrical characteristics
Table 8: Source-drain diode
Symbo
l
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
50
A
ISDM
Source-drain current
(pulsed)
-
200
A
1.6
V
(1)
VSD
Forward on voltage
VGS = 0 V, ISD = 50 A
-
trr
Reverse recovery time
-
140
ns
Qrr
Reverse recovery charge
-
0.7
µC
IRRM
Reverse recovery current
ISD = 50 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
-
10.6
A
-
245
ns
-
2.6
µC
-
21
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 50 A,
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID026982 Rev 3
5/12
Electrical characteristics
2.1
STW56N60DM2
Electrical characteristics (curves)
Figure 3: Thermal impedance
Figure 2: Safe operating area
6/12
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
DocID026982 Rev 3
STW56N60DM2
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source- drain diode forward
characteristics
DocID026982 Rev 3
7/12
Test circuits
3
STW56N60DM2
Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
8/12
DocID026982 Rev 3
STW56N60DM2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
4.1
TO-247 package information
Figure 20: TO-247 package outline
0075325_H
DocID026982 Rev 3
9/12
Package information
STW56N60DM2
Table 9: TO-247 package mechanical data
mm.
Dim.
Min.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
L2
10/12
Typ.
5.45
5.60
18.50
ØP
3.55
ØR
4.50
S
5.30
DocID026982 Rev 3
3.65
5.50
5.50
5.70
STW56N60DM2
5
Revision history
Revision history
Table 10: Document revision history
Date
Revision
Changes
08-Oct-2014
1
First release.
09-Jun-2015
2
Text and formatting changes throughout document.
On cover page:
- updated title description and features
In Section 1 Electrcial ratings:
- updated Table 2. Absolute maximum ratings
- updated Table 4. Avalanche characteristics
In Section 2 Electrical characteristics:
- updated and renamed Table 5. Static (was On /off states)
- updated Table 6. Dynamic
- updated Table 7. Switching times
- updated Table 8. Source drain diode
Added Section 2.1 Electrical characteristics (curves)
15-Jun-2015
3
Datasheet promoted from preliminary data to production data
DocID026982 Rev 3
11/12
STW56N60DM2
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DocID026982 Rev 3
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